2SB1132
Rev.D Nov.-2015
描述
/
DATA SHEET
Descriptions
SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.
特征
/ Features
饱和压降低,与 2SD1664 互补。
Low VCE(sat),complements the 2SD1664.
用途
/
Applications
用于中功率放大。
Medium power amplifier applications.
内部等效电路
引脚排列
1
2
/ Pinning
3
PIN1:Base
印章代码
/ Equivalent Circuit
PIN 2:Collector
PIN 3:Emitter
/ Marking
hFE Classifications
Symbol
hFE Range
R
82~180
120~270
180~390
HBAQ
**
HBAP
**
http://www.fsbrec.com
Q
**
Marking
P
HBAR
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2SB1132
Rev.D Nov.-2015
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-1.0
A
Collector Current-Continuous(Pulse)
ICP
-2.0
A
Collector Power Dissipation
PC
500
mW
Collector Power Dissipation
PC(Tc=25℃)
2.0
W
Tj
150
℃
Tstg
-55~150
℃
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=-50μA
IB=0
-40
V
VCEO
IC=-1.0mA
IB=0
-32
V
Emitter to Base Breakdown Voltage
VEBO
IE=-50μA
IC=0
-5.0
V
Collector Cut-Off Current
ICBO
VCB=-20V
IE=0
-0.5
μA
Emitter Base Cut-Off Current
IEBO
VEB=-4.0V
IC=0
-0.5
μA
DC Current Gain
hFE
VCE=-3.0V
IC=-0.1A
VCE(sat)
IC=-500mA
IB=-50mA
-0.2
fT
VCE=-5.0V
f=30MHz
VCB=-10V
f=1.0MHz
IE=50 mA
150
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
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Cob
IE=0
82
390
20
-0.5
V
MHz
30
pF
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2SB1132
Rev.D Nov.-2015
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
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2SB1132
Rev.D Nov.-2015
外形尺寸图
DATA SHEET
/ Package Dimensions
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2SB1132
Rev.D Nov.-2015
印章说明
/
DATA SHEET
Marking Instructions
**
HBAP
说明:
H:
为公司代码
BA:
为型号代码
P:
为 hFE 分档代码
**:
为生产批号代码,随生产批号变化。
Note:
H:
Company Code.
BA:
Product Type.
P:
hFE Classifications Symbol
**:
Lot No. Code, code change with Lot No.
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2SB1132
Rev.D Nov.-2015
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Time:10±1 sec
/ REEL
Package Type
封装形式
使用说明
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
SOT-89
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Reel
Inner Box 盒
Outer Box 箱
1,000
7
7,000
8
56,000
7〞×12
180×120×180
385×257×392
/ Notices
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