2SJ356-VB

2SJ356 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)a 0.058 at VGS = - 10 V - 6.5 0.065 at VGS = - 4.5 V - 5.5 Qg (Typ.) 30 nC • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch S D G G D D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C - 5.2 ID - 4 .8b IDM - 4.1b - 20 IAS - 4.5 EAS 10.1 Maximum Power Dissipation TA = 25 °C mJ A 3.5b 10.4a 6.6a PD W 2.1b 1.1 b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 6.9a IS TC = 25 °C TC = 70 °C V - 6.5 a TA = 70 °C Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 33 40 Maximum Junction-to-Case Steady State RthJC 0.98 1.2 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 2SJ356 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 68 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS =-5 V, VGS = - 10 V - 5.2 - 1.2 - 25 A VGS = - 10 V, ID = - 3 A 0.058 VGS = - 4.5 V, ID = - 2 A 0.065 VDS = - 15 V, ID = - 5 A µA  20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1500 VDS = - 25 V, VGS = 0 V, f = 1 MHz 150 VDS = - 30 V, VGS = - 10 V, ID = - 5 A VDS = - 30 V, VGS = - 4.5 V, ID = - 5 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = - 2 V, RL = 2 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω tf Fall Time 38 56 19 30 9 nC 10 td(on) Turn-On Delay Time pF 200  5.2 10 15 7 15 70 110 40 60 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 6.9 - 15 IS = - 3 A IF = - 5 A, di/dt = 10 A/µs, TJ = 25 °C A -1 - 1.5 V 45 68 ns 59 120 nC 29 16 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 2SJ356 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 20 VGS = 10 thru 6 V 8 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 16 12 8 VGS = 4 V 4 6 4 TC = 125 °C 2 TC = 25 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 VDS - Drain-to-SourceVoltage (V) 5 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 Output Characteristics 5 Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 6 4 TC = 125 °C 2 TC = 25 °C 60 TC = 125 °C 40 20 TC = 25 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 24 36 ID - Drain Current (A) 12 VGS - Gate-to-Source Voltage (V) 0.09 2000 0.08 1600 0.07 VGS = 4.5 V 0.06 0.05 Ciss 1200 800 400 VGS = 10 V Coss 0.00 Crss 0 0 20 40 60 ID - Drain Current (A) 60 Transconductance C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 48 80 On-Resistance vs. Drain Current 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 Capacitance 服务热线：400-655-8788 3 2SJ356 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5 A 8 VDS = 20 V 6 VDS = 30 V 4 2 40 60 20 Qg - Total Gate Charge (nC) 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 0 0 ID = 2 A 80 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Gate-to-Source Voltage 0.10 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 2 A TJ = 25 °C 10 0.08 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 1 0.0 0.00 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 1000 75 ID = 10 mA 72 V(BR)DSS - (V) I Dav - (A) 100 10 69 66 IAV (A) at TJ = 25 °C 1 63 IAV (A) at TJ = 150 °C 0.1 0.0001 0.001 0.01 T in - (s) 0.1 1 Single Pulse Avalanche Current Capability vs. Time 60 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Drain-Source Breakdown Voltage vs. Junction Temperature 服务热线：400-655-8788 4 2SJ356 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 0.8 10 ID - Drain Current (A) V GS(th) Variance (V) 0.5 ID = 250 µA ID = 1 mA 0.2 8 6 4 - 0.1 2 0 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature(°C) 125 25 0 150 Threshold Voltage 100 125 150 Max. Drain Current vs. Case Temperature 14 100 Limited by RDS(on)* 12 10 µs 10 I D - Drain Current (A) 10 Power (W) 75 50 TC - Case Temperature (°C) 8 6 4 100 µs 5 1 ms 10 ms 100 ms, DC 1 2 BVDSS Limited TC = 25 °C Single Pulse 0 0 25 50 75 100 125 0.1 0.1 150 TJ - Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Power Derating, Junction-to-Case Safe Operating Area, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 2SJ356 www.VBsemi.com Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches 服务热线：400-655-8788 6 2SJ356 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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