ZXMN10A07ZTA-VB

ZXMN10A07ZTA www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Typ. 100 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 3.8 0.125 at VGS = 4.5 V 3.6 Qg (Typ.) 2.9 nC APPLICATIONS D D • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • • • • DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs Power Management for Mobile Computing G G S D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 100 ± 20 4.2 3.5 3.2b,c 2.8b,c 15 2.1 1b, c 3 0.45 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) 5 s Steady State Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. 服务热线：400-655-8788 1 ZXMN10A07ZTA www.VBsemi.com MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 59 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V -1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 4.8 1.2 5 µA A VGS = 10 V, ID = 2 A 0.102 VGS = 6 V, ID = 1 A 0.120 VGS = 4.5 V, ID = 1 A 0.125 VDS = 20 V, ID = 2 A 5  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 196 VDS = 50 V, VGS = 0 V, f = 1 MHz 67 VDS = 50 V, VGS = 10 V, ID = 2.2 A 5.2 10.4 2.9 5.8 14 VDS = 50 V, VGS = 4.5 V, ID = 2.2 A 4.3 8.6 40 60 68 102 14 21 tf 20 30 td(on) 8 16 10 20 10 20 7 14 tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 50 V, RL = 27.7  ID = 1.8 A, VGEN = 4.5 V, Rg = 1  VDD = 50 V, RL = 27.7  ID = 1.8 A, VGEN = 10 V, Rg = 1  tf Fall Time 1 nC 1.4 f = 1 MHz td(on) Turn-On Delay Time pF 0.9  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.1 -8 IS = 1.8 A IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C - 0.8 - 1.2 A V 23 35 ns 21 32 nC 17 6 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 ZXMN10A07ZTA www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 8 VGS = 10 V thru 5 V VGS = 4.5 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 6 VGS = 4 V 4 0.6 TC = 25 °C 0.4 2 0.2 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 280 0.15 RDS(on) - On-Resistance (Ω) 1 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.13 VGS = 4.5 V VGS = 6 V 0.11 VGS = 10 V 0.09 Ciss 210 140 Coss 70 Crss 0.07 0 2 4 ID - Drain Current (A) 6 0 8 0 20 40 On-Resistance vs. Drain Current and Gate Voltage 2 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 6 VDS = 25 V VDS = 80 V 4 2 0 3 4.5 Qg - Total Gate Charge (nC) Gate Charge 100 VGS = 10 V, 2 A ID = 2.2 A 1.5 80 Capacitance 10 0 60 VDS - Drain-to-Source Voltage (V) 6 1.7 1.4 VGS = 4.5 V, 1 A 1.1 VGS = 6 V, 1 A 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 ZXMN10A07ZTA www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100.0 0.35 ID = 2 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.28 10.0 TJ = 150 °C TJ = 25°C 1.0 TJ = 125 °C 0.21 0.14 TJ = 25 °C 0.07 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 2.8 8 Power (W) VGS(th) (V) 2.5 ID = 250 μA 2.2 6 4 1.9 2 1.6 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1000 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms 10 s, 1s DC 0.01 0.001 TA = 25 °C Single Pulse 0.1 BVDSS Limited 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 ZXMN10A07ZTA www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.5 ID - Drain Current (A) 2.8 2.1 1.4 0.7 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 3 1.0 2.4 0.8 1.8 0.6 Power (W) Power (W) Current Derating* 1.2 0.6 0.4 0.2 0 0.0 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 ZXMN10A07ZTA www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 ZXMN10A07ZTA www.VBsemi.com Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches 服务热线：400-655-8788 7 ZXMN10A07ZTA www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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