PXT8050

PXT8050 PXT8050 SOT-89-3L TRANSISTOR (NPN) FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 hFE(2) VCE=1V, IC=800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V 1 V 1.55 V Base-emitter voltage VBE VCE=1V, IC=10mA Base-emitter positive favor voltage VBEF IB=1A fT Transition frequency Cob output capacitance VCE=10V,IC=50mA,f=30MHz 100 VCB=10V,IE=0,f=1MHz MHz 15 CLASSIFICATION OF hFE(1) Rank Range B C D D3 85-160 120-200 160-300 300-400 pF PXT8050 Typical Characteristics Static Characteristic 0.30 hFE 0.8mA 0.20 DC CURRENT GAIN (A) 0.9mA IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 1mA 0.25 hFE 1000 0.7mA 0.6mA 0.15 0.5mA 0.4mA 0.10 —— IC Ta=100℃ 300 Ta=25℃ 100 0.3mA 0.2mA 0.05 COMMON EMITTER VCE= 1V IB=0.1mA 0.00 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 7 1 10 100 COLLECTOR CURRENT IC VBEsat —— 1200 1000 1500 IC (mA) IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 6 VCE (V) 100 Ta=100 ℃ Ta=25℃ 10 800 Ta=25℃ 600 Ta=100 ℃ 400 β=10 1 1 10 100 COLLECTOR CURREMT IC 1500 —— IC β=10 1000 1500 1 10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— 100 IC VCB/VEB f=1MHz IE=0/IC=0 1000 Ta=25 ℃ (pF) (mA) Cib CAPACITANCE T= a 25 ℃ T= a 10 0℃ 100 C IC COLLECTOR CURRENT 1000 1500 (mA) 10 Cob 10 COMMON EMITTER VCE= 1V 1 0.1 1 0 300 600 900 1200 1 BESE-EMMITER VOLTAGE VBE (mV) IC fT TRANSITION FREQUENCY PC 0.6 (MHz) —— COLLECTOR POWER DISSIPATION PC (W) fT 1000 10 REVERSE VOLTAGE 100 10 COMMON EMITTER VCE=10V —— V 20 (V) Ta 0.5 0.4 0.3 0.2 0.1 Ta=25℃ 1 2 10 COLLECTOR CURRENT 100 IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 150