S-8261ABJMD-G3JT2S

S-8261 Series www.sii-ic.com BATTERY PROTECTION IC FOR 1-CELL PACK Rev.5.3_00 © Seiko Instruments Inc., 2001-2012 The S-8261 Series is a lithium-ion / lithium polymer rechargeable battery protection IC incorporating high-accuracy voltage detection circuit and delay circuits. The S-8261 Series is suitable for protection of single-cell lithium-ion / lithium polymer battery packs from overcharge, overdischarge and overcurrent. „ Features (1) Internal high accuracy voltage detection circuit • Overcharge detection voltage 3.9 V to 4.5 V (applicable in 5 mV step) Accuracy: ±25 mV (+25°C) and ±30 mV (−5°C to +55°C) • Overcharge hysteresis voltage 0.1 V to 0.4 V*1 Accuracy: ±25 mV The overcharge hysteresis voltage can be selected from the range 0.1 V to 0.4 V in 50 mV step. • Overdischarge detection voltage 2.0 V to 3.0 V (applicable in 10 mV step) Accuracy: ±50 mV • Overdischarge hysteresis voltage 0.0 V to 0.7 V*2 Accuracy: ±50 mV The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step. • Overcurrent 1 detection voltage 0.05 V to 0.3 V (applicable in 10 mV step) Accuracy: ±15 mV • Overcurrent 2 detection voltage 0.5 V (fixed) Accuracy: ±100 mV (2) High voltage device is used for charger connection pins (VM and CO pins: absolute maximum rating = 28 V). (3) Delay times (overcharge: tCU, overdischarge: tDL, overcurrent 1: tlOV1, overcurrent 2: tlOV2) are generated by an internal circuit. No external capacitor is necessary. Accuracy: ±20% (4) Three-step overcurrent detection circuit is included (overcurrent 1, overcurrent 2 and load short-circuiting). (5) 0 V battery charge function “Available” / “Unavailable” is selectable. (6) Power-down function “Yes” / “No” is selectable. (7) Charger detection function and abnormal charge current detection function • The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.) (Charger detection function). • When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low (Abnormal charge current detection function). (8) Low current consumption • Operation mode 3.5 μA typ., 7.0 μA max. • Power-down mode 0.1 μA max. (9) Wide operating temperature range −40°C to +85°C (10) Lead-free, Sn 100%, halogen-free*3 *1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (where overcharge release voltage < 3.8 V is prohibited.) *2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (where overdischarge release voltage > 3.4 V is prohibited.) *3. Refer to “„ Product Name Structure” for details. „ Applications • Lithium-ion rechargeable battery packs • Lithium polymer rechargeable battery packs „ Package • SOT-23-6 Seiko Instruments Inc. 1 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Block Diagram DP Output control circuit 0 V battery charge circuit or 0 V battery charge inhibition circuit DO Divider control circuit Oscillator control circuit VDD ＋ Charger detection circuit CO － Overcharge detection comparator ＋ － Overcurrent 1 detection comparator RVMD ＋ VM ＋ － Overcurrent 2 detection comparator RVMS Overdischarge detection comparator ＋ － － Load short-circuiting detection comparator VSS Remark All the diodes shown in the figure are parasitic diodes. Figure 1 2 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Product Name Structure 1. Product Name S-8261A xx MD - xxx T2 x Environmental code U: Lead-free (Sn 100%), halogen-free S: Lead-free, halogen-free G: Lead-free (for details, please contact our sales office) IC direction in tape specifications*1 Product name (abbreviation)*2 Package name (abbreviation) MD: SOT-23-6 Serial code Assigned from AA to ZZ in alphabetical order *1. Refer to the tape drawing. *2. Refer to the “3. Product Name List”. 2. Package Package name SOT-23-6 Package MP006-A-P-SD Drawing code Tape MP006-A-C-SD Seiko Instruments Inc. Reel MP006-A-R-SD 3 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 3. Product Name List Table 1 (1 / 2) Product name Overcharge Overcharge Overdischarge Overdischarge Overcurrent 1 detection hysteresis detection hysteresis detection voltage voltage voltage voltage voltage [VCU] [VHC] [VDL] [VHD] [VIOV1] 0 V battery charge function Delay time combi*1 nation S-8261AAGMD-G2GT2x S-8261AAHMD-G2HT2x S-8261AAJMD-G2JT2x S-8261AALMD-G2LT2x S-8261AAMMD-G2MT2x S-8261AANMD-G2NT2x S-8261AAOMD-G2OT2x S-8261AAPMD-G2PT2x S-8261AARMD-G2RT2x S-8261AASMD-G2ST2x S-8261AATMD-G2TT2x S-8261AAUMD-G2UT2x 4.280 V 4.280 V 4.325 V 4.300 V 4.300 V 4.275 V 4.280 V 4.325 V 4.280 V 4.280 V 4.300 V 4.275 V 0.20 V 0.20 V 0.25 V 0.10 V 0.10 V 0.10 V 0.20 V 0.25 V 0.20 V 0.20 V 0.10 V 0.10 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.30 V 0V 0V 0.4 V 0V 0V 0.1 V 0V 0.4 V 0V 0V 0V 0.1 V 0.16 V 0.08 V 0.15 V 0.08 V 0.20 V 0.10 V 0.13 V 0.10 V 0.10 V 0.15 V 0.08 V 0.10 V Available Available Unavailable Unavailable Unavailable Available Unavailable Unavailable Available Unavailable Available Available (1) (1) (1) (1) (1) (1) (1) (1) (1) (2) (3) (4) S-8261AAXMD-G2XT2x S-8261AAZMD-G2ZT2x S-8261ABAMD-G3AT2x S-8261ABBMD-G3BT2x S-8261ABCMD-G3CT2x S-8261ABIMD-G3IT2x S-8261ABJMD-G3JT2x S-8261ABKMD-G3KT2x S-8261ABLMD-G3LT2x S-8261ABMMD-G3MT2x S-8261ABNMD-G3NT2x S-8261ABPMD-G3PT2x S-8261ABRMD-G3RT2x S-8261ABSMD-G3ST2x S-8261ABTMD-G3TT2x S-8261ABYMD-G3YT2x S-8261ABZMD-G3ZT2x S-8261ACAMD-G4AT2x S-8261ACBMD-G4BT2x S-8261ACDMD-G4DT2x S-8261ACEMD-G4ET2x S-8261ACFMD-G4FT2x S-8261ACHMD-G4HT2x S-8261ACIMD-G4IT2x S-8261ACJMD-G4JT2x S-8261ACKMD-G4KT2x 4.350 V 4.280 V 4.350 V 4.275 V 4.300 V 4.275 V 4.280 V 4.100 V 4.275 V 4.280 V 4.300 V 4.200 V 4.275 V 4.280 V 4.280 V 4.275 V 4.325 V 4.280 V 4.250 V 4.350 V 3.900 V 4.280 V 4.465 V 4.250 V 4.275 V 4.280 V 0.10 V 0.25 V 0.20 V 0.20 V 0.20 V 0.20 V 0.20 V 0.25 V 0.20 V 0.20 V 0.20 V 0.10 V 0.20 V 0.10 V 0.20 V 0.10 V 0.25 V 0.20 V 0.20 V 0.25 V 0.10 V 0.20 V 0.30 V 0.20 V 0.10 V 0.20 V 2.30 V 2.50 V 2.50 V 2.30 V 2.30 V 2.30 V 3.00 V 2.50 V 2.30 V 2.80 V 2.30 V 2.80 V 2.50 V 2.50 V 3.00 V 2.30 V 2.50 V 2.30 V 2.60 V 2.30 V 2.00 V 2.30 V 2.10 V 2.40 V 2.30 V 2.80 V 0.1 V 0.4 V 0V 0V 0V 0V 0V 0.4 V 0V 0V 0V 0.1 V 0.4 V 0.5 V 0.4 V 0.1 V 0.4 V 0V 0.3 V 0.7 V 0.3 V 0V 0V 0.5 V 0.1 V 0V 0.10 V 0.10 V 0.20 V 0.13 V 0.13 V 0.20 V 0.08 V 0.15 V 0.05 V 0.10 V 0.06 V 0.15 V 0.15 V 0.18 V 0.08 V 0.10 V 0.15 V 0.13 V 0.12 V 0.25 V 0.10 V 0.10 V 0.15 V 0.10 V 0.15 V 0.13 V Available Unavailable Available Available Available Unavailable Available Unavailable Unavailable Available Available Unavailable Unavailable Unavailable Available Available Unavailable Unavailable Unavailable Available Available Available Available Available Available Available (4) (1) (4) (1) (1) (5) (1) (1) (5) (1) (1) (1) (1) (1) (5) (6) (6) (6) (1) (7) (1) (8) (9) (1) (1) (1) Power-down function Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes No Yes Yes Yes Yes No Yes Yes *1. Refer to the Table 2 about the details of the delay time combinations (1) to (9). Remark 1. 2. 3. 4 Please contact our sales office for the products with detection voltage value other than those specified above. x: G or U Please select products of environmental code = U for Sn 100%, halogen-free products. Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 Table 1 (2 / 2) Overcharge Overcharge Overdischarge Overdischarge Overcurrent 1 detection hysteresis detection hysteresis detection voltage voltage voltage voltage voltage [VCU] [VHC] [VDL] [VHD] [VIOV1] Product name S-8261ACMMD-G4MT2x S-8261ACNMD-G4NT2x S-8261ACSMD-G4ST2y 4.325 V 4.215 V 4.350 V 0.20 V 0.10 V 0.10 V 3.00 V 2.30 V 2.30 V 0.4 V 0.1 V 0.1 V 0.06 V 0.13 V 0.15 V 0 V battery charge function Delay time combi*1 nation Power-down function Unavailable Unavailable Available (1) (1) (6) Yes Yes Yes *1. Refer to the Table 2 about the details of the delay time combinations (1) to (9). Remark 1. 2. 3. 4. Please contact our sales office for the products with detection voltage value other than those specified above. x: G or U y: S or U Please select products of environmental code = U for Sn 100%, halogen-free products. Table 2 Delay time combination Overcharge detection delay time [tCU] Overdischarge detection delay time [tDL] Overcurrent 1 detection delay time [tlOV1] Overcurrent 2 detection delay time [tlOV2] Load short-circuiting detection delay time [tSHORT] (1) 1.2 s 144 ms 9 ms 2.24 ms 320 μs (2) 1.2 s 144 ms 4.5 ms 2.24 ms 320 μs (3) 4.6 s 36 ms 18 ms 9 ms 320 μs (4) 4.6 s 144 ms 9 ms 2.24 ms 320 μs (5) 1.2 s 36 ms 9 ms 2.24 ms 320 μs (6) 1.2 s 144 ms 9 ms 1.12 ms 320 μs (7) 1.2 s 290 ms 18 ms 2.24 ms 320 μs (8) 1.2 s 144 ms 18 ms 2.24 ms 320 μs (9) 0.3 s 36 ms 9 ms 1.12 ms 320 μs Remark The delay times can be changed within the range listed Table 3. For details, please contact our sales office. Table 3 Delay time Symbol Overcharge detection delay time tCU Overdischarge detection delay time tDL Overcurrent 1 detection delay time tlOV1 Overcurrent 2 detection delay time tlOV1 Load short-circuiting detection delay time tSHORT *1. The value is the delay time of the standard products. Selection range 1.2 s*1 0.15 s 144 ms*1 36 ms 9 ms*1 4.5 ms 2.24 ms*1 1.12 ms 320 μs*1 ⎯ Seiko Instruments Inc. 4.6 s 290 ms 18 ms ⎯ 600 μs Remarks Choose from the left. Choose from the left. Choose from the left. Choose from the left. Choose from the left. 5 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Pin Configuration SOT-23-6 Top view 6 5 4 1 2 3 Figure 2 6 Table 4 Pin No. Symbol 1 DO 2 VM 3 CO 4 5 6 DP VDD VSS Description FET gate control pin for discharge (CMOS output) Voltage detection pin between VM and VSS (Overcurrent detection pin) FET gate control pin for charge (CMOS output) Test pin for delay time measurement Positive power input pin Negative power input pin Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Absolute Maximum Ratings Table 5 Item Input voltage between VDD and VSS Input pin voltage for VM Output pin voltage for CO Output pin voltage for DO Symbol VDS VVM VCO VDO Power dissipation PD ⎯ Operating ambient temperature Topr ⎯ Applied pin VDD VM CO DO Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size : 114.3 mm × 76.2 mm × t1.6 mm (2) Board name : JEDEC STANDARD51-7 Caution ⎯ −55 to +125 °C The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. (1) When mounted on board (2) When not mounted on board 600 Power dissipation (PD) [mW] 700 Power dissipation (PD) [mW] (Ta = 25°C unless otherwise specified) Absolute Maximum Rating Unit VSS −0.3 to VSS +12 V VDD −28 to VDD +0.3 V VVM −0.3 to VDD+0.3 V VSS −0.3 to VDD +0.3 V 250 (When not mounted on board) mW 650*1 mW −40 to +85 °C 600 500 400 300 200 100 500 400 300 200 100 0 0 0 100 150 50 Ambient temperature (Ta) [°C] 0 150 100 50 Ambient temperature (Ta) [°C] Figure 3 Power Dissipation of Package Seiko Instruments Inc. 7 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Electrical Characteristics 1. Except Detection Delay Time (25°C) Table 6 Item Symbol Condition Min. ⎯ VCU −0.025 VCU −0.030 VHC −0.025 VDL −0.050 VHD −0.050 VIOV1 −0.015 0.4 0.9 −1.0 (Ta = 25°C unless otherwise specified) Test Test Typ. Max. Unit Condition Circuit DETECTION VOLTAGE Overcharge detection voltage VCU = 3.9 V to 4.5 V, 5 mV Step VCU Ta = −5°C to 55°C*1 VCU VCU VCU +0.025 VCU +0.030 VHC +0.025 VDL +0.050 VHD +0.050 VIOV1 +0.015 0.6 1.5 −0.4 V 1 1 V 1 1 Overcharge hysteresis voltage VHC ⎯ VHC V 1 1 VHC = 0.1 V to 0.4 V, 50 mV Step Overdischarge detection voltage VDL ⎯ VDL V 2 2 VDL = 2.0 V to 3.0 V, 10 mV Step Overdischarge hysteresis voltage VHD ⎯ VHD V 2 2 VHD = 0.0 V to 0.7 V, 100 mV Step Overcurrent 1 detection voltage VIOV1 ⎯ VIOV1 V 3 2 VIOV1 = 0.05 V to 0.3 V, 10 mV Step Overcurrent 2 detection voltage VIOV2 ⎯ 0.5 V 3 2 Load short-circuiting detection voltage VSHORT ⎯ 1.2 V 3 2 Charger detection voltage VCHA ⎯ −0.7 V 4 2 INPUT VOLTAGE, OPERATION VOLTAGE Operation voltage between VDD and VSS VDSOP1 Internal circuit operating voltage 1.5 ⎯ 8 V ⎯ ⎯ Operation voltage between VDD and VM VDSOP2 Internal circuit operating voltage 1.5 ⎯ 28 V ⎯ ⎯ CURRENT CONSUMPTION (with power-down function) Current consumption in normal operation IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.5 7.0 μA 5 2 Current consumption at power down IPDN VDD = VVM = 1.5 V ⎯ ⎯ 0.1 μA 5 2 CURRENT CONSUMPTION (without power-down function) Current consumption in normal operation IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.5 7.0 μA 5 2 Overdischarge current consumption IOPED VDD = VVM = 1.5 V 1.0 3.0 5.5 μA 5 2 OUTPUT RESISTANCE CO pin resistance “H” RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5 5 10 kΩ 7 4 CO pin resistance “L” RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 2.5 5 10 kΩ 7 4 DO pin resistance “H” RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5 5 10 kΩ 8 4 DO pin resistance “L” RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 2.5 5 10 kΩ 8 4 VM INTERNAL RESISTANCE Internal resistance between VM and VDD RVMD VDD = 1.8 V, VVM = 0 V 100 300 900 kΩ 6 3 Internal resistance between VM and VSS RVMS VDD = 3.5 V, VVM = 1.0 V 10 20 40 kΩ 6 3 0 V BATTERY CHARGE FUNCTION 0 V battery charge starting charger voltage V0CHA 0 V battery charge “available” 1.2 ⎯ ⎯ V 11 2 0 V battery charge inhibition battery voltage V0INH 0 V battery charge “unavailable” ⎯ ⎯ 0.5 V 12 2 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 8 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 2. Except Detection Delay Time (−40°C to +85°C*1) Table 7 (Ta = −40°C to +85°C*1 unless otherwise specified) Item Symbol Condition DETECTION VOLTAGE Overcharge detection voltage VCU ⎯ VCU = 3.9 V to 4.5 V, 5 mV Step Overcharge hysteresis voltage VHC ⎯ VHC = 0.1 V to 0.4 V, 50 mV Step Overdischarge detection voltage VDL ⎯ VDL = 2.0 V to 3.0 V, 10 mV Step Overdischarge hysteresis voltage VHD ⎯ VHD = 0.0 V to 0.7 V, 100 mV Step Overcurrent 1 detection voltage VIOV1 ⎯ VIOV1 = 0.05 V to 0.3 V, 10 mV Step Overcurrent 2 detection voltage VIOV2 ⎯ Load short-circuiting detection voltage VSHORT ⎯ Charger detection voltage VCHA ⎯ INPUT VOLTAGE, OPERATION VOLTAGE Operation voltage between VDD and VSS VDSOP1 Internal circuit operating voltage Operation voltage between VDD and VM VDSOP2 Internal circuit operating voltage CURRENT CONSUMPTION (with power-down function) Current consumption in normal operation IOPE VDD = 3.5 V, VVM = 0 V Current consumption at power down IPDN VDD = VVM = 1.5 V CURRENT CONSUMPTION (without power-down function) Current consumption in normal operation IOPE VDD = 3.5 V, VVM = 0 V Overdischarge current consumption IOPED VDD = VVM = 1.5 V OUTPUT RESISTANCE CO pin resistance “H” RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V CO pin resistance “L” RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V Min. VCU −0.055 VHC −0.025 VDL −0.080 VHD −0.050 VIOV1 −0.021 0.37 0.7 −1.2 Typ. Max. Unit Test Test Condition Circuit 0.5 1.2 −0.7 VCU +0.040 VHC +0.025 VDL +0.080 VHD +0.050 VIOV1 +0.021 0.63 1.7 −0.2 1.5 1.5 ⎯ ⎯ 8 28 V V ⎯ ⎯ ⎯ ⎯ 0.7 ⎯ 3.5 ⎯ 8.0 0.1 μA μA 5 5 2 2 0.7 0.7 3.5 3.0 8.0 6.0 μA μA 5 5 2 2 1.2 5 15 kΩ 7 4 1.2 5 15 kΩ 7 4 VCU VHC VDL VHD VIOV1 V 1 1 V 1 1 V 2 2 V 2 2 V 3 2 V V V 3 3 4 2 2 2 DO pin resistance “H” RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2 5 15 kΩ 8 4 DO pin resistance “L” RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 1.2 5 15 kΩ 8 4 VM INTERNAL RESISTANCE Internal resistance between VM and VDD RVMD VDD = 1.8 V, VVM = 0 V 78 300 1310 kΩ 6 3 Internal resistance between VM and VSS RVMS VDD = 3.5 V, VVM = 1.0 V 7.2 20 44 kΩ 6 3 0 V BATTERY CHARGE FUNCTION 0 V battery charge starting charger voltage V0CHA 0 V battery charge “available” 1.7 ⎯ ⎯ V 11 2 0 V battery charge inhibition battery voltage V0INH 0 V battery charge “unavailable” ⎯ ⎯ 0.3 V 12 2 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 9 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 3. Detection Delay Time (1) S-8261AAG, S-8261AAH, S-8261AAJ, S-8261AAL, S-8261AAM, S-8261AAN, S-8261AAO, S-8261AAP, S-8261AAR, S-8261AAZ, S-8261ABB, S-8261ABC, S-8261ABJ, S-8261ABK, S-8261ABM, S-8261ABN, S-8261ABP, S-8261ABR, S-8261ABS, S-8261ACB, S-8261ACE, S-8261ACI, S-8261ACK, S-8261ACM, S-8261ACJ, S-8261ACN Table 8 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 80 144 245 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 5 9 15 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. (2) S-8261AAS Table 9 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 3.6 4.5 5.4 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 80 144 245 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 2.5 4.5 7.7 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 10 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 (3) S-8261AAT Table 10 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 3.7 4.6 5.5 s 9 5 Overdischarge detection delay time tDL ⎯ 29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 14 18 22 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 7.2 9 11 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 2.5 4.6 7.8 s 9 5 Overdischarge detection delay time tDL ⎯ 20 36 61 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 10 18 31 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 5 9 15 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. (4) S-8261AAU, S-8261AAX, S-8261ABA Table 11 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 3.7 4.6 5.5 s 9 5 Overdischarge detection delay time tDL ⎯ 115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 2.5 4.6 7.8 s 9 5 Overdischarge detection delay time tDL ⎯ 80 144 245 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 5 9 15 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 11 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series (5) Rev.5.3_00 S-8261ABI, S-8261ABL, S-8261ABT Table 12 Item Symbol Condition Min. Typ. Max. Unit Test condition Test circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 20 36 61 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 5 9 15 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. (6) S-8261ABY, S-8261ABZ, S-8261ACA, S-8261ACS Table 13 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 0.89 1.12 1.35 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 80 144 245 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 5 9 15 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 0.61 1.12 1.91 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 12 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 (7) S-8261ACD Table 14 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 232 290 348 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 14 18 22 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 160 290 493 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 10 18 31 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. (8) S-8261ACF Table 15 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL ⎯ 115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 14 18 22 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.8 2.24 2.7 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.7 1.2 2.0 s 9 5 Overdischarge detection delay time tDL ⎯ 80 144 245 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 10 18 31 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 1.2 2.24 3.8 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 13 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series (9) Rev.5.3_00 S-8261ACH Table 16 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU ⎯ 0.24 0.3 0.36 s 9 5 Overdischarge detection delay time tDL ⎯ 29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 0.89 1.12 1.35 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 220 320 380 μs 10 5 DELAY TIME (Ta = −40°C to +85°C) *1 Overcharge detection delay time tCU ⎯ 0.17 0.3 0.51 s 9 5 Overdischarge detection delay time tDL ⎯ 20 36 61 ms 9 5 Overcurrent 1 detection delay time tlOV1 ⎯ 5 9 15 ms 10 5 Overcurrent 2 detection delay time tlOV2 ⎯ 0.61 1.12 1.91 ms 10 5 Load short-circuiting detection delay time tSHORT ⎯ 150 320 540 μs 10 5 *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 14 Seiko Instruments Inc. Rev.5.3_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series „ Test Circuits Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS. (1) Test Condition 1, Test Circuit 1 (Overcharge Detection Voltage, Overcharge Hysteresis Voltage) The overcharge detection voltage (VCU) is defined as the voltage between VDD and VSS at which VCO goes from “H” to “L” when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. The overcharge hysteresis voltage (VHC) is then defined as the difference between the overcharge detection voltage (VCU) and the voltage between VDD and VSS at which VCO goes from “L” to “H” when the voltage V1 is gradually decreased. (2) Test Condition 2, Test Circuit 2 (Overdischarge Detection Voltage, Overdischarge Hysteresis Voltage) The overdischarge detection voltage (VDL) is defined as the voltage between VDD and VSS at which VDO goes from “H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V and V2 = 0 V. The overdischarge hysteresis voltage (VHD) is then defined as the difference between the overdischarge detection voltage (VDL) and the voltage between VDD and VSS at which VDO goes from “L” to “H” when the voltage V1 is gradually increased. (3) Test Condition 3, Test Circuit 2 (Overcurrent 1 Detection Voltage, Overcurrent 2 Detection Voltage, Load Short-Circuiting Detection Voltage) The overcurrent 1 detection voltage (VIOV1) is defined as the voltage between VM and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the overcurrent 1 detection delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition V1 = 3.5 V and V2 = 0 V. The overcurrent 2 detection voltage (VIOV2) is defined as the voltage between VM and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the overcurrent 2 detection delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition V1 = 3.5 V and V2 = 0 V. The load short-circuiting detection voltage (VSHORT) is defined as the voltage between VM and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the load short-circuiting detection delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition V1 = 3.5 V and V2 = 0 V. (4) Test Condition 4, Test Circuit 2 (Charger Detection Voltage, Abnormal Charge Current Detection Voltage) The charger detection voltage (VCHA) is defined as the voltage between VM and VSS at which VDO goes from “L” to “H” when the voltage V2 is gradually decreased from 0 V after the voltage V1 is gradually increased from the starting condition of V1 = 1.8 V and V2 = 0 V until the voltage V1 becomes V1 = VDL + (VHD / 2). The charger detection voltage can be measured only in the product whose overdischarge hysteresis VHD ≠ 0. Set V1 = 3.5 V and V2 = 0 V. Decrease V2 from 0 V gradually. The voltage between VM and VSS when VCO goes from “H” to “L” is the abnormal charge current detection voltage. The abnormal charge current detection voltage has the same value as the charger detection voltage (VCHA). (5) Test Condition 5, Test Circuit 2 (Normal Operation Current Consumption, Power-Down Current Consumption, Overdischarge Current Consumption) With power-down function The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions of V1 = 3.5 V and V2 = 0 V (Normal status). The power-down current consumption (IPDN) is the current that flows through the VDD pin (IDD) under the set conditions of V1 = V2 = 1.5 V (Overdischarge status). Without power-down function The operating current consumption (IOPE) is the current that flows through the VDD pin (IDD) under the set conditions of V1 = 3.5 V and V2 = 0 V (Normal status). The Overdischarge current consumption (IOPED) is the current that flows through the VDD pin (IDD) under the set conditions of V1 = V2 = 1.5 V (Overdischarge status). Seiko Instruments Inc. 15 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 (6) Test Condition 6, Test Circuit 3 (Internal Resistance between VM and VDD, Internal Resistance between VM and VSS) The resistance between VM and VDD (RVMD) is the internal resistance between VM and VDD under the set conditions of V1 = 1.8 V and V2 = 0 V. The resistance between VM and VSS (RVMS) is the internal resistance between VM and VSS under the set conditions of V1 = 3.5 V and V2 = 1.0 V. (7) Test Condition 7, Test Circuit 4 (CO Pin Resistance “H”, CO Pin Resistance “L”) The CO pin resistance “H” (RCOH) is the resistance the CO pin under the set condition of V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V. The CO pin resistance “L” (RCOL) is the resistance the CO pin under the set condition of V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V. (8) Test Condition 8, Test Circuit 4 (DO Pin Resistance “H”, DO Pin Resistance “L”) The DO pin resistance “H” (RDOH) is the resistance the DO pin under the set condition of V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V. The DO pin resistance “L” (RDOL) is the resistance the DO pin under the set condition of V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V. (9) Test Condition 9, Test Circuit 5 (Overcharge Detection Delay Time, Overdischarge Detection Delay Time) The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage V1 momentarily increases (within 10 μs) from the overcharge detection voltage (VCU) − 0.2 V to the overcharge detection voltage (VCU) + 0.2 V under the set condition of V2 = 0 V. The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage V1 momentarily decreases (within 10 μs) from the overdischarge detection voltage (VDL) +0.2 V to the overdischarge detection voltage (VDL) − 0.2 V under the set condition of V2 = 0 V. (10) Test Condition 10, Test Circuit 5 (Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting Detection Delay Time, Abnormal Charge Current Detection Delay Time) The overcurrent 1 detection delay time (tIOV1) is the time needed for VDO to go “L” after the voltage V2 momentarily increases (within 10 μs) from 0 V to 0.35 V under the set condition of V1 = 3.5 V and V2=0 V. The overcurrent 2 detection delay time (tIOV2) is the time needed for VDO to go “L” after the voltage V2 momentarily increases (within 10 μs) from 0 V to 0.7 V under the set condition of V1 = 3.5 V and V2 = 0 V. The load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go “L” after the voltage V2 momentarily increases (within 10 μs) from 0 V to 1.6 V under the set condition of V1 = 3.5 V and V2 = 0 V. The abnormal charge current detection delay time is the time needed for VCO to go from “H” to “L” after the voltage V2 momentarily decreases (within 10 μs) from 0 V to −1.1 V under the set condition of V1 = 3.5 V and V2 = 0 V. The abnormal charge current detection delay time has the same value as the overcharge detection delay time. (11) Test Condition 11, Test Circuit 2 (0 V battery charge function) (0 V Battery Charge Starting Charger Voltage) The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between VDD and VM at which VCO goes “H” (VVM + 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of V1 = V2 = 0 V. (12) Test Condition 12, Test Circuit 2 (0 V battery charge inhibition function) (0 V Battery Charge Inhibition Battery Voltage) The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage between VDD and VSS at which VCO goes “H” (VVM + 0.1 V or higher) when the voltage V1 is gradually increased from the starting condition of V1 = 0 V and V2 = −4 V. 16 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 R1 = 470 Ω VDD IDD A DP DP S-8261 Series V1 S-8261 Series V1 VDD VM VM VSS DO VSS DO CO V VDO V VCO V VDO V VCO Test Circuit 1 Test Circuit 2 VDD VDD DP S-8261 Series V1 DP S-8261 Series V1 VM VM VSS V2 COM COM IDD A CO A IVM CO DO VSS DO CO A IDO V2 V4 A ICO V2 V3 COM COM Test Circuit 3 Test Circuit 4 DP VDD S-8261 Series V1 VM VSS DO CO V2 Oscilloscope Oscilloscope COM Test Circuit 5 Figure 4 Seiko Instruments Inc. 17 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Operation Remark Refer to “„ Battery Protection IC Connection Example”. 1. Normal Status The S-8261 Series monitors the voltage of the battery connected between VDD pin and VSS pin and the voltage difference between VM pin and VSS pin to control charging and discharging. When the battery voltage is in the range from the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the range from the charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1), the IC turns both the charging and discharging control FETs on. This status is called the normal status, and in this status charging and discharging can be carried out freely. Caution When a battery is connected to the IC for the first time, discharging may not be enabled. In this case, short the VM pin and VSS pin or connect the charger to restore the normal condition. 2. Overcurrent Status (Detection of Overcurrent 1, Overcurrent 2 and Load Short-circuiting) When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped. This status is called the overcurrent status. In the overcurrent status, the VM and VSS pins are shorted by the resistor between VM and VSS (RVMS) in the IC. However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is connected. When the load is disconnected completely, the VM pin returns to the VSS potential. The voltage of the VM pin returns to overcurrent 1 detection voltage (VIOV1) or lower and the overcurrent status is restored to the normal status. 3. Overcharge Status When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under the normal status and the detection continues for the overcharge detection delay time (tCU) or longer, the S-8261 Series turns the charging control FET off to stop charging. This status is called the overcharge status. The overcharge status is released by the following two cases ((1) and (2)): (1) When the battery voltage falls below the overcharge release voltage (VCU) − overcharge detection hysteresis voltage (VHC), the S-8261 Series turns the charging control FET on and turns to the normal status. (2) When a load is connected and discharging starts, the S-8261 Series turns the charging control FET on and returns to the normal status. Just after the load is connected and discharging starts, the discharging current flows through the parasitic diode in the charging control FET. At this moment the VM pin potential becomes Vf, the voltage for the parasitic diode, higher than VSS level. When the battery voltage goes under the overcharge detection voltage (VCU) and provided that the VM pin voltage is higher than the overcurrent 1 detection voltage, the S-8261 Series releases the overcharge status. Caution 1. If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not fall below the overcharge detection voltage (VCU) even when a heavy load is connected, the detection of overcurrent 1, overcurrent 2 and load short-circuiting do not function until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery has an internal impedance of several dozens of mΩ, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and the detection of overcurrent 1, overcurrent 2 and load short-circuiting function. 2. When a charger is connected after the overcharge detection, the overcharge status is not released even if the battery voltage is below the overcharge release voltage (VCL). The overcharge status is released when the VM pin voltage goes over the charger detection voltage (VCHA) by removing the charger. 18 Seiko Instruments Inc. Rev.5.3_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series 4. Overdischarge Status With power-down function When the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under the normal status and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8261 Series turns the discharging control FET off to stop discharging. This status is called the overdischarge status. When the discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the IC (RVMD). When the voltage difference between the VM and VDD then is 1.3 V (typ.) or lower, the current consumption is reduced to the power-down current consumption (IPDN). This status is called the power-down status. The power-down status is released when a charger is connected and the voltage difference between the VM and VDD becomes 1.3 V (typ.) or higher. Moreover when the battery voltage becomes the overdischarge detection voltage (VDL) or higher, the S-8261 Series turns the discharging FET on and returns to the normal status. Without power-down function When the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under the normal status and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8261 Series turns the discharging control FET off to stop discharging. This status is called the overdischarge status. When the discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the IC (RVMD). When the battery voltage becomes the overdischarge detection voltage (VDL) or higher, the S-8261 Series turns the discharging FET on and returns to the normal status. 5. Charger Detection When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower than the charger detection voltage (VCHA), the S-8261 Series releases the overdischarge status and turns the discharging control FET on when the battery voltage becomes equal to or higher than the overdischarge detection voltage (VDL) since the charger detection function works. This action is called charger detection. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower than the charger detection voltage (VCHA), the S-8261 Series releases the overdischarge status when the battery voltage reaches the overdischarge detection voltage (VDL) + overdischarge hysteresis (VHD) or higher. 6. Abnormal Charge Current Detection If the VM pin voltage falls below the charger detection voltage (VCHA) during charging under normal status and it continues for the overcharge detection delay time (tCU) or longer, the charging control FET turns off and charging stops. This action is called the abnormal charge current detection. Abnormal charge current detection works when the DO pin voltage is “H” and the VM pin voltage falls below the charger detection voltage (VCHA). Consequently, if an abnormal charge current flows to an over-discharged battery, the S-8261 Series turns the charging control FET off and stops charging after the battery voltage becomes higher than the overdischarge detection voltage which make the DO pin voltage “H”, and still after the overcharge detection delay time (tCU) elapses. Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes less than charger detection voltage (VCHA). Seiko Instruments Inc. 19 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 7. Delay Circuit The detection delay times are determined by dividing a clock of the approximately 3.5 kHz with the counter. Remark 1. The detection delay time for overcurrent 2 (tIOV2) and load short-circuiting (tSHORT) start when the overcurrent 1 (VIOV1) is detected. When the overcurrent 2 (VIOV2) or load short-circuiting (VSHORT) is detected over the detection delay time for each of them (= tIOV2 or tSHORT) after the detection of overcurrent 1 (VIOV1), the S-8261 Series turns the FET off within tIOV2 or tSHORT of each detection. VDD DO pin tD VSS Overcurrent 2 detection delay time (tIOV2) 0 ≤ tD ≤ tIOV2 Time VDD VIOV2 VM pin VIOV1 VSS Time Figure 5 2. With power-down function When the overcurrent is detected and continues for longer than the overdischarge detection delay time (tDL) without releasing the load, the status changes to the power-down status when the battery voltage falls below the overdischarge detection voltage (VDL). When the battery voltage falls below the overdischarge detection voltage (VDL) due to the overcurrent, the S-8261 Series turns the discharging control FET off by the overcurrent detection. In this case if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is still lower than the overdischarge detection voltage (VDL), the S-8261 Series shifts to the power-down status. Without power-down function When the overcurrent is detected and continues for longer than the overdischarge detection delay time (tDL) without released the load, the status changes to the overdischarge status when the battery voltage falls below overdischarge detection voltage (VDL).When the battery voltage falls below overdischarge detection voltage (VDL) due to the overcurrent, the S-8261 Series turns the discharging control FET off by the overcurrent detection. In this case, if the recovery of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is still lower than the overdischarge detection voltage (VDL), the S-8261 Series shifts to the overdischarge status. 20 Seiko Instruments Inc. BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 8. DP Pin The DP pin is a test pin for delay time measurement and it should be open in the actual application. If a capacitor whose capacitance is larger than 1000 pF or a resistor whose resistance is less than 1 MΩ is connected to this pin, error may occur in the delay times or in the detection voltages. 9. 0 V Battery Charge Function “Available” This function is used to recharge the connected battery whose voltage is 0 V due to the self-discharge. When the 0 V battery charge starting charger voltage (V0CHA) or higher is applied between EB+ pin and EB− pin by connecting a charger, the charging control FET gate is fixed to VDD pin voltage. When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-on voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes equal to or higher than the overdischarge detection voltage (VDL) and the overdischarge hysteresis voltage (VHD), the S-8261 Series enters the normal status. Caution Some battery providers do not recommend charging for completely self-discharged battery. Please ask battery providers before determine whether to enable or inhibit the 0 V battery charge function. Remark The 0 V battery charge function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0 V battery charging function is enabled charges a battery forcibly and abnormal charge current cannot be detected when the battery voltage is low. 10. 0 V Battery Charge Function “Unavailable” This function inhibits the recharging when a battery that is short-circuited (0 V battery) internally is connected. When the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is fixed to EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or higher, charging can be performed. Caution Some battery providers do not recommend charging for completely self-discharged battery. Please ask battery providers before determining the 0 V battery charge function. Seiko Instruments Inc. 21 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Timing Chart (1) Overcharge and Overdischarge Detection VCU VCU–VHC Battery voltage VDL+VHD VDL VDD DO pin VSS VDD CO pin VSS VDD VM pin VIOV1 VSS VCHA Charger connection Load connection Overdischarge detection delay time (tDL ) Overcharge detection delay time (tCU) Status (1) (2) (1) (1) (3) Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. Figure 6 (2) Overcurrent Detection Battery voltage VCU VCU−VHC VDL+VHD VDL VDD DO pin VSS VDD CO pin VSS VM pin VDD VSHORT VIOV2 VIOV1 VSS Charger connection Load connection Overcurrent 1 detection delay time (tIOV1 ) Overcurrent 2 detection delay time (tIOV2 ) Status (1) (1) (1) (4) (4) Load short-circuiting detection delay time (tSHORT ) Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. Figure 7 22 Seiko Instruments Inc. (4) (1) BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 (3) Charger Detection Battery voltage VCU VCU−VHC VDL+VHD VDL VDD DO pin VSS CO pin VDD VSS VM pin VDD VSS VCHA Charger connection Load connection In case VM pin voltage < VCHA Overdischarge is released at the overdischarge detection voltage (VDL ) Overdischarge detection delay time (tDL ) Status (1) (1) (3) Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. Figure 8 (4) Abnormal Charge Current Detection Battery voltage VC U VC U−VHC VD L+VH D VD L VD D DO pin VSS CO pin VD D VSS VM pin VD D VSS VC HA Charger connection Load connection Abnormal charging current detection delay time ( = Overcharge detection delay time (tCU)) Overdischarge detection delay time (tD L) Status (1) (3) (1) (2) (1) Remark (1) Normal status, (2) Overcharge status, (3) Overdischarge status, (4) Overcurrent status The charger is supposed to charge with constant current. Figure 9 Seiko Instruments Inc. 23 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Battery Protection IC Connection Example EB+ R1 : 470 Ω DP VDD Battery C1 : 0.1 μF S-8261 Series VSS DO CO VM R2 : 2 kΩ FET1 FET2 EB− Figure 10 Table 17 Constant for External Components Symbol FET1 C1 R2 *1. **2. *3. *4. *5. N-channel MOS FET Purpose Min. Typ. Max. ⎯ ⎯ ⎯ Remarks Threshold voltage ≤ Overdischarge detection voltage *2 Gate to source withstanding voltage ≥ Charger voltage *1 Discharge control Threshold voltage ≤ Overdischarge detection voltage *2 Gate to source withstanding voltage ≥ Charger voltage ESD protection, Resistance should be as small as possible to avoid lowering of Resistor 300 Ω 470 Ω 1 kΩ *3 the overcharge detection accuracy caused by VDD pin current. For power fluctuation Install a capacitor of 0.022 μF or higher between VDD and Capacitor For power fluctuation 0.022 μF 0.1 μF 1.0 μF *4 VSS. Protection for reverse Select a resistance as large as possible to prevent large current Resistor 300 Ω 2 kΩ 4 kΩ *5 when a charger is connected in reverse. connection of a charger If the threshold voltage of an FET is low, the FET may not cut the charging current. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 300 Ω or higher to R1 for ESD protection. If a capacitor of less than 0.022 μF is connected to C1, DO may oscillate when load short-circuiting is detected. Be sure to connect a capacitor of 0.022 μF or higher to C1. If R2 has a resistance higher than 4 kΩ, the charging current may not be cut when a high-voltage charger is connected. FET2 R1 Part N-channel MOS FET *1 Charge control ⎯ ⎯ ⎯ Caution 1. The above constants may be changed without notice. 2. The DP pin should be open. 3. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform through evaluation using the actual application to set the constant. 24 Seiko Instruments Inc. Rev.5.3_00 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series „ Precautions • The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. Seiko Instruments Inc. 25 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 „ Characteristics (Typical Data) 1. Detection / Release Voltage Temperature Characteristics Overcharge release voltage vs. temperature 4.44 4.02 4.42 4.00 VCL [V] VCU [V] Overcharge detection voltage vs. temperature 4.40 4.38 4.36 4.34 −50 −25 0 25 50 Ta [°C] 75 3.92 −50 100 3.44 3.02 3.42 3.00 2.98 2.96 2.94 −50 −25 0 25 50 Ta [°C] 75 100 −25 0 25 50 Ta [°C] 75 100 75 100 Overcurrent 2 detection voltage vs. temperature 0.65 0.40 0.60 VIOV2 [V] 0.35 0.30 0.25 0.55 0.50 0.45 −25 0 25 50 Ta [°C] 75 100 75 100 0.40 −50 Load short-circuiting detection voltage vs. temperature 1.5 1.4 VSHORT [V] 75 3.38 3.34 −50 100 0.20 1.3 1.2 1.1 26 25 50 Ta [°C] 3.40 0.45 1.0 −50 0 3.36 Overcurrent 1 detection voltage vs. temperature 0.15 −50 −25 Overdischarge release voltage vs. temperature 3.04 VDU [V] VDL [V] 3.96 3.94 Overdischarge detection voltage vs. temperature VIOV1 [V] 3.98 −25 0 25 50 Ta [°C] Seiko Instruments Inc. −25 0 25 Ta [°C] 50 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 2. Current Consumption Temperature Characteristics Current consumption vs. temperature in power-down mode 5 0.10 4 0.08 IPDN [μA] IOPE [μA] Current consumption vs. temperature in normal mode 3 2 1 0 −50 0.06 0.04 0.02 −25 0 25 50 Ta [°C] 75 0 −50 100 −25 0 25 50 Ta [°C] 75 100 75 100 3. Current Consumption Power Voltage Characteristics (Ta = 25°C) Current consumption vs. power supply voltage dependency 6 IOPE [μA] 5 4 3 2 1 0 0 2 4 6 VDD [V] 8 10 12 4. Detection / Release Delay Time Temperature Characteristics Overcharge detection delay time vs. temperature Overcharge release delay time vs. temperature 60 1.50 50 tCL [ms] tCU [s] 1.25 1.00 0.75 0.50 −50 40 30 20 −25 0 25 50 Ta [°C] 75 100 10 −50 −25 0 25 50 Ta [°C] Overdischarge detection delay time vs. temperature 200 tDL [ms] 180 160 140 120 100 −50 −25 0 25 50 Ta [°C] 75 100 Seiko Instruments Inc. 27 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Overcurrent 2 detection delay time vs. temperature 15 3.4 13 3.0 tIOV2 [ms] tIOV1 [ms] Overcurrent 1 detection delay time vs. temperature Rev.5.3_00 11 9 2.2 1.8 7 5 −50 2.6 −25 0 25 50 Ta [°C] 75 100 75 100 1.4 −50 −25 0 25 50 Ta [°C] 75 100 Load short-circuiting delay time vs. temperature 0.40 tSHORT [ms] 0.36 0.32 0.28 0.24 0.20 0.16 −50 −25 0 25 50 Ta [°C] 5. Delay Time Power-Voltage Characteristics (Ta = 25°C) Overcurrent 2 detection delay time vs. power supply voltage dependency 15 3.4 13 3.0 tIOV2 [ms] tIOV1 [V] Overcurrent 1 detection delay time vs. power supply voltage dependency 11 9 7 5 2 2.6 2.2 1.8 2.5 3 3.5 VDD [V] 4 4.5 1.4 2 Load short-circuiting delay time vs. power supply voltage dependency tSHORT [ms] 0.32 0.28 0.24 0.2 0.16 2.5 28 3 3.5 VDD [V] 4 4.5 Seiko Instruments Inc. 2.5 3 3.5 VDD [V] 4 4.5 BATTERY PROTECTION IC FOR 1-CELL PACK S-8261 Series Rev.5.3_00 6. CO Pin / DO Pin Output Current Characteristics (Ta = 25°C) VDD = 3.5 V, VM = VSS = 0 V CO pin source current characteristics −0.5 CO pin sink current characteristics 0.4 ICO [mA] ICO [mA] −0.4 −0.3 −0.2 −0.1 0 0 0.3 0.2 0.1 1 2 3 0 0 4 1 2 3 VCO [V] VCO [V] VDD = 3.5 V, VM = VSS = 0 V DO pin source current characteristics −0.5 DO pin sink current characteristics 5 VDD = 1.8 V, VM = VSS = 0 V 0.4 IDO [mA] IDO [mA] 4 0.5 −0.4 −0.3 −0.2 −0.1 0 0 VDD = 4.5 V, VM = VSS = 0 V 0.5 0.3 0.2 0.1 1 2 3 4 0 0 VDO [V] Seiko Instruments Inc. 0.5 1 VDO [V] 1.5 2 29 2.9±0.2 1.9±0.2 6 0.95 5 1 4 2 3 +0.1 0.15 -0.05 0.95 0.35±0.15 No. MP006-A-P-SD-2.0 TITLE SOT236-A-PKG Dimensions No. MP006-A-P-SD-2.0 SCALE UNIT mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 +0.2 ø1.0 -0 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 6 Feed direction No. MP006-A-C-SD-3.1 TITLE SOT236-A-Carrier Tape No. MP006-A-C-SD-3.1 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP006-A-R-SD-2.1 SOT236-A-Reel TITLE MP006-A-R-SD-2.1 No. SCALE UNIT QTY mm Seiko Instruments Inc. 3,000 www.sii-ic.com • • The information described herein is subject to change without notice. • When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. • Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. • The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior written permission of Seiko Instruments Inc. • • The products described herein are not designed to be radiation-proof. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.