SM1402NSSC-TRG

SM1402NSS ® N-Channel Enhancement Mode MOSFET Pin Description Features • 60V/0.4A, D RDS(ON)= 2.2Ω(max.) @ VGS=10V RDS(ON)= 2.6Ω(max.) @ VGS=4.5V S G • ESD Protection • Reliable and Rugged • Lead Free and Green Devices Available Top View of SC-70 D (RoHS Compliant) Applications • • G High Speed Switching. Analog Switching Application. S N-Channel MOSFET Ordering and Marking Information Package Code S : SC-70 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM1402NS Assembly Material Handling Code Temperature Range Package Code SM1402NS S : 02 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - August, 2015 1 www.sinopowersemi.com SM1402NSS ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 60 V GSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM a PD RθJA b -55 to 150 Pulsed Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C 0.2 TA=25°C 0.4 TA=70°C 0.32 TA=25°C 1.6 TA=25°C 0.75 TA=70°C 0.48 Steady State 165 V °C A A A W °C/W Note a：Pulse width limited by max. junction temperature. 2 Note b：Surface Mounted on 1in pad area. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 2 www.sinopowersemi.com SM1402NSS ® Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions Min. Typ. Max. Unit 60 - - V - - 1 - - 30 Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250µA VDS=48V, VGS =0V TJ=85°C µA Gate Threshold Voltage VDS=VGS , I DS=250µA 1 2 2.5 V Gate Leakage Current VGS=±20V, V DS=0V - - ±10 uA VGS=10V, IDS=100mA - 1.8 2.2 Ω VGS=4.5V, IDS=50mA - 2 2.6 Ω ISD =100mA, VGS=0V - 0.8 1.3 V - 13 - ns - 8 - nC - 24 32 - 5.5 - - 2.5 - - 3 6 - 7 13 - 10 18 - 12 22 - 1.5 2.1 - 0.6 - - 0.3 - RDS(ON) d Drain-Source On-state Resistance Diode Characteristics VSD c Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD =1A, dlSD /dt=100A/µs Dynamic Characteristics c C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON ) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf VDD=30V, RL =300Ω, IDS=0.1A, V GEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg VGS=0V, VDS=30V, Frequency=1.0MHz pF ns d Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=30V, VGS =10V, IDS=1A nC Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note d：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 3 www.sinopowersemi.com SM1402NSS ® Typical Operating Characteristics Drain Current 0.48 0.75 0.40 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 0.90 0.60 0.45 0.30 0.15 0.32 0.24 0.16 0.08 o 0.00 o T A=25 C 0 20 40 60 80 0.00 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance R ds (o n )L im it 1 ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 3 300µs 1ms 0.1 10ms 100ms DC 0.01 O TA=25 C 1E-3 0.1 T A=25 C,VG=10V 1 10 100 300 VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 2 Duty = 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 Single Pulse 2 0.05 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA : 165 C/W 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM1402NSS ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 4.5 1.0 VGS=4.5,5,6,7,8,9,10V 4.0 4V 0.6 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 0.8 3.5V 0.4 3V 0.2 3.5 3.0 2.5 VGS=4.5V 2.0 VGS=10V 1.5 1.0 0.5 2.5V 0.0 0 2 4 6 8 0.0 0.0 10 0.2 0.4 0.6 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.4 10 IDS=250µA 8 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) IDS=100mA 6 4 2 0 0.8 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM1402NSS ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.5 2 VGS = 10V 2.0 1 IS - Source Current (A) Normalized On Resistance IDS = 100mA 1.5 1.0 0.5 o Tj=150 C o Tj=25 C o RON@Tj=25 C: 1.8Ω 0.0 -50 -25 0 25 50 75 0.1 0.2 100 125 150 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.6 10 Frequency=1MHz VDS=30V 9 27 VGS - Gate-source Voltage (V) Ciss 24 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 30 21 18 15 12 9 Coss 6 Crss 3 0 0.4 0 8 IDS=1A 8 7 6 5 4 3 2 1 16 24 32 0 0.0 40 VDS - Drain-Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 0.3 0.6 0.9 1.2 1.5 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM1402NSS ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 7 td(off) tf www.sinopowersemi.com SM1402NSS ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 8 www.sinopowersemi.com SM1402NSS ® Package Information D e E E1 SEE VIEW A c b 0.15 A A2 e1 L θ A1 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A A1 RECOMMENDED LAND PATTERN SC-70 MILLIMETERS INCHES MIN. MAX. MIN. 0.80 1.10 0.031 MAX. 0.043 0.00 0.10 0.000 0.004 A2 0.80 1.00 0.031 0.040 b 0.20 0.40 0.008 0.016 c 0.08 0.25 0.003 0.010 D 1.90 2.20 0.075 0.087 E 2.00 2.40 0.079 0.095 E1 1.15 1.35 0.045 0.65 BSC 0.026 BSC e1 1.30 BSC 0.051 BSC 0 0.15 0.45 0o 8o 1.95 0.6 0.053 e L 0.6 0.006 0.65 0.018 0o 8o UNIT: mm Note : 1. Followed from JEDEC MO-223 . 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 9 www.sinopowersemi.com SM1402NSS ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SC-70 T1 C d D W E1 8.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 -0.00 -0.20 F 3.5±0.05 P0 P1 P2 D0 D1 T A0 B0 K0 4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1 MIN. 0.6+0.00 -0.40 2.4±0.20 2.4±0.20 1.2±0.20 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 10 www.sinopowersemi.com SM1402NSS ® Taping Direction Information SC-70 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - August, 2015 11 www.sinopowersemi.com SM1402NSS ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm