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BAV20W

BAV20W

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD-123

  • 描述:

    二极管配置:独立式;功率:500mW;直流反向耐压(Vr):200V;平均整流电流(Io):250mA;正向压降(Vf):1.25V@200mA;反向电流(Ir):100nA@200V;反向恢复时间(...

  • 数据手册
  • 价格&库存
BAV20W 数据手册
山东晶导微电子股份有限公司 BAV19W / BAV20W / BAV21W Jingdao Microelectronics co.LTD FEATURES ▪ For surface mounted applications ▪ Glass Passivated Chip Junction ▪ Fast reverse recovery time ▪ Ideal for automated placement ▪ Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode MECHANICAL DATA 2 • Case: SOD-123 • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 16mg/0.00056oz 1 Simplified outline SOD-123 and symbol Absolute Maximum Ratings at 25 °C Symbols BAV19W BAV20W BAV21W Units Maximum Repetitive Peak Reverse Voltage V RRM 120 200 250 V Maximum RMS voltage V RMS 100 150 200 V Parameter Continuous Forward Current Repetitive Peak Forward Current Non-reptitive Peak Forward Surge Current Total Power Dissipation Operating and Storage Temperature Range at 1s at 1ms at 1 us IF 250 mA I FRM 625 mA I FSM 1 3 9 A P tot 500 mW T j , T stg -55 ~ +150 °C Characteristics at T a = 25 °C Parameter Reverse Breakdown Voltage at I R=100 μA Maximum Forward Voltage at 100 m A at 200 m A Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =150 °C Typical Junction Capacitance at V R=4V, f=1MHz Maximum Reverse Recovery Time (1) Symbols BAV19W BAV20W BAV21W Units V (BR)R 120 200 250 V VF 1.00 1.25 V IR 0.1 100 μA Cj 5 pF t rr 50 ns (1)Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A 2016.10 SOD123-K-BAV19W/BAV20W/BAV21W-250mA250V Page 1 of 3 山东晶导微电子股份有限公司 BAV19W / BAV20W / BAV21W Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics 600 500 400 300 200 100 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current(μ A) Total Power Dissipation (mW) Fig.1 Forward Current Derating Curve 100 T J =150°C 10 1 0.1 T J =25°C 0.01 00 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 80 100 120 T J =25°C 10 1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 2016.10 60 100 T J =25°C 0.2 40 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 BAV19W / BAV20W / BAV21W Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 A D b E A1 C ∠ALL ROUND L1 E1 SOD-123 mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size Marking Type number 2.0 (79) 1.2 (47) BAV19W A8 BAV20W T2 BAV21W T3 1.2 (47) 1.2 (47) Marking code Unit: mm (mil) 2016.10 JD610282B5 Page 3 of 3
BAV20W 价格&库存

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BAV20W
  •  国内价格
  • 20+0.06460
  • 100+0.05580
  • 300+0.04700
  • 800+0.03520
  • 3000+0.02940
  • 15000+0.02790

库存:70596

BAV20W
    •  国内价格
    • 50+0.07085
    • 500+0.05530
    • 3000+0.04666
    • 6000+0.04148

    库存:7680

    BAV20W
      •  国内价格
      • 1+0.08680

      库存:50