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MM1Z3V3

MM1Z3V3

  • 厂商:

    SINO-IC(光宇睿芯)

  • 封装:

    SOD-123

  • 描述:

    二极管配置:独立式;稳压值(标称值):3.3V;稳压值(范围):3.1V~3.5V;精度:±5%;功率:500mW;

  • 数据手册
  • 价格&库存
MM1Z3V3 数据手册
SHANGHAI June 2006 MICROELECTRONICS CO., LTD. MM1Z2V0~MM1Z120 Silicon Planar Zener Diodes Revision:A General Description Features Silicon planar zener diode in a small plastic SMD z z SOD-123 package. Total power dissipation: max. 500mW Small plastic package suitable for surface mounted design z Wide variety of voltage ranges: nom. 2.0 to 120V z Tolerance approximately ±5% Functional diagram SOD-123 Note: 1-Cathode;2-Anode Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Unit Power Dissipation 500 mW Tj Junction Temperature 175 ℃ TS Storage Temperature Range -55 to +175 ℃ Zener Current see Table “Characteristics” Ptot Characteristics at Tamb=25℃ Thermal Resistance Junction to Ambient Air Forward Voltage at IF=100mA ShangHai Sino-IC Microelectronics Co., Ltd. Symbol Min. Typ. Max. Unit RthA --- --- 0.3 K/mW VF --- --- 1 V 1. MM1Z2V0~MM1Z120 Electrical Characteristics Zener Voltage Range Type Vznom IZT for VZT Dynamic Revers Leakage Impedance Current ZZ(Max) at IZ IR(Max) at Temp. coefficient of Zener Voltage VR TKvz V mA V Ω mA μA V %/K MM1Z2V0 2.0 5 1.80…2.15 100 5 120 0.5 -0.09…-0.06 MM1Z2V2 2.2 5 2.08...2.33 100 5 120 0.7 -0.09…-0.06 MM1Z2V4 2.4 5 2.28...2.56 100 5 120 1.0 -0.09…-0.06 MM1Z2V7 2.7 5 2.5...2.9 110 5 120 1.0 -0.09…-0.06 MM1Z3V0 3.0 5 2.8...3.2 120 5 50 1.0 -0.08...-0.05 MM1Z3V3 3.3 5 3.1...3.5 130 5 20 1.0 -0.08...-0.05 MM1Z3V6 3.6 5 3.4...3.8 130 5 10 1.0 -0.08...-0.05 MM1Z3V9 3.9 5 3.7...4.1 130 5 10 1.0 -0.08...-0.05 MM1Z4V3 4.3 5 4.0...4.6 130 5 10 1.0 -0.06...-0.03 MM1Z4V7 4.7 5 4.4...5.0 130 5 10 1.0 -0.05...+0.02 MM1Z5V1 5.1 5 4.8...5.4 130 5 5 1.5 -0.02...+0.02 MM1Z5V6 5.6 5 5.2...6.0 80 5 5 2.5 -0.05...+0.05 MM1Z6V2 6.2 5 5.8...6.6 50 5 2 3.0 0.03...0.06 MM1Z6V8 6.8 5 6.4...7.2 30 5 2 3.5 0.03...0.07 MM1Z7V5 7.5 5 7.0...7.9 30 5 2 4.0 0.03...0.07 MM1Z8V2 8.2 5 7.7...8.7 30 5 2 5.0 0.03...0.08 MM1Z9V1 9.1 5 8.5...9.6 30 5 2 6.0 0.03...0.09 MM1Z10 10 5 9.4...10.6 30 5 2 7.0 0.03...0.1 MM1Z11 11 5 10.4…11.6 30 5 2 8.0 0.03…0.11 MM1Z12 12 5 11.4...12.7 35 5 2 9.0 0.03...0.11 MM1Z13 13 5 12.4...14.1 35 5 2 10 0.03...0.11 MM1Z15 15 5 13.8...15.6 40 5 2 11 0.03...0.11 MM1Z16 16 5 15.3...17.1 40 5 2 12 0.03...0.11 MM1Z18 18 5 16.8...19.1 45 5 2 13 0.03...0.11 MM1Z20 20 5 18.8...21.2 50 5 2 15 0.03...0.11 MM1Z22 22 5 20.8...23.3 55 5 2 17 0.04...0.12 MM1Z24 24 5 22.8…25.6 60 5 2 19 0.04…0.12 MM1Z27 27 5 25.1...28.9 70 2 2 21 0.04...0.12 MM1Z30 30 5 28...32 80 2 2 23 0.04...0.12 MM1Z33 33 5 31...35 80 2 2 25 0.04...0.12 MM1Z36 36 5 34...38 90 2 2 27 0.04...0.12 MM1Z39 39 2.5 37...41 100 2 2 30 0.04...0.12 MM1Z43 43 2.5 40...46 130 2 2 33 0.04...0.12 MM1Z47 47 2.5 44...50 150 2 2 36 0.04...0.12 MM1Z51 51 2.5 48…54 180 2 1 39 0.04…0.12 MM1Z56 56 2.5 52…60 180 2 1 43 0.04…0.12 MM1Z62 62 2.5 58…66 200 2 0.2 47 0.04…0.12 ShangHai Sino-IC Microelectronics Co., Ltd. 2. MM1Z2V0~MM1Z120 Zener Voltage Range Type Vznom IZT for VZT Dynamic Revers Leakage Impedance Current ZZ(Max) at IZ IR(Max) at Temp. coefficient of Zener Voltage VR TKvz V mA V Ω mA μA V %/K MM1Z68 68 2.5 64…72 250 2 0.2 52 0.04...0.12 MM1Z75 75 2.5 70...79 300 2 0.2 57 0.04...0.12 MM1Z82 82 2.5 77...87 300 2 0.2 63 0.05...0.12 MM1Z91 91 1 85...96 700 1 0.2 69 0.05...0.12 MM1Z100 100 1 94...106 700 1 0.2 76 0.05...0.12 MM1Z110 110 1 104...116 800 1 0.2 84 0.05...0.12 MM1Z120 120 1 114...127 900 1 0.2 91 0.05...0.12 1) VZ is tested with pulses (20 ms). 2) ZZ is measured at IZ by given a very small A.C. current signal. Breakdown characteristics TJ=constant (pulse) Fig 1 Fig 2 ShangHai Sino-IC Microelectronics Co., Ltd. 3. MM1Z2V0~MM1Z120 SOD-123 Mechanical Data Dimensions (mm are the original dimensions) UNIT A A1 bP c D E HE LP Q v mm 1.15 0.1 0.6 0.135 2.7 1.65 4.0 0.4 0.77 0.2 1.05 0 0.5 0.127 2.6 1.55 3.6 0.2 0.67 Note (1) The marking bar indicates the cathode. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4.
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