SEB160M-40

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB160M-40 Schottky barrier diode Revision:A Features ● Small power mold type. (PMDS) ● Low IR ● High reliability Applications ● General rectification Construction ● Silicon epitaxial planer Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current IO 1 A TFSM 30 A Junction temperature Tj 150 ℃ Storage temperature Tstg -40 ～ +150 ℃ Forward current surge peak (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 — 0.46 0.51 V IF =1.0A Reverse current IR — 4.0 30 uA VR =40V SEB160M-40 z Please pay attention to static electricity when handling. ShangHai Sino-IC Microelectronics Co., Ltd. 2. SEB160M-40 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.com Website: http://www.sino-ic.com ShangHai Sino-IC Microelectronics Co., Ltd. 3.