DFR1G

DFR1A THRU DFR1M 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Package outline Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds at terminals Glass passivated chip junction 1.8± 0.2 １．０±0.2 SOD-123 1.1± 0.25 0.10-0.30 2.7±0.2 0.6±0.25 Mechanical data Case: JEDEC SOD-123 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any 3.7±0.2 Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range T A=25 oC unless otherwise noted) SYMBOLS DFR1A DFR1B DFR1D DFR1G DFR1J DFR1K DFR1M VRRM VRMS VDC 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V I(AV) 1.0 A IFSM 25.0 A VF 1.3 V IR 5.0 50.0 µA trr 150 250 15.0 85.0 -55 to +150 CJ RθJA TJ,TSTG 500 ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted www.fuxinsemi.com Page 1 Ver2.1 DFR1A THRU DFR1M 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Rating and characteristic curves FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 TJ=25 C 60 80 100 120 140 160 180 200 LEAD TEMPERATURE (°C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWAARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 PULSE GENERATOR (NOTE 2) ( ) 50 40 30 8.3ms Single Half TJ=25 C JEDEC method 10 0 1 5 50 10 100 NUMBER OF CYCLES AT 60Hz (+) 1W NONINDUCTIVE Sine Wave 20 OSCILLISCOPE (NOTE 1) FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. JUNCTION CAPACITANCE,(pF) trr | | | | | | | | +0.5A 0 35 -0.25A 30 25 20 15 10 5 0 -1.0A 1cm .01 SET TIME BASE FOR .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 50 / 10ns / cm www.fuxinsemi.com Page 2 Ver2.1 DFR1A THRU DFR1M 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code DFR1A DFR1B DFR1D DFR1G DFR1J DFR1K DFR1M F1 F2 F3 F4 F5 F6 F7 Suggested solder pad layout C A B Dimensions in inches and (millimeters) www.fuxinsemi.com PACKAGE A B C SOD-123 0.075 (1.90) 0.055 (1.40) 0.075 (1.90) Page 3 Ver2.1 DFR1A THRU DFR1M 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o