PTD3004

PTD3004 30V/50A N-Channel Advanced Power MOSFET Features • Low RDS(on) @ 5V Logic. • 5V Logic Level Control • TO-252 SMD Package • Pb−Free, RoHS Compliant BVDSS 30 V ID 50 0 A RDSON@VGS=10V 10 mΩ RDSON@VGS=5V 13 mΩ Applications • High Side Load Switch • Battery Switch • Optimized for Power Management Applications for Portable Products, such as Aeromodelling, Power bank, S G TO-252 Brushless motor, Main board , and Others Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit ±20 V 30 V 175 °C -55 to 175 °C TC =25°C 50 A Common Ratings (T C=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS Drain-Source Breakdown Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested (Sillicon Limit) TC =25°C 140 A ID Continuous Drain current @VGS=10V TC =25°C 50 A PD Maximum Power Dissipation TC =25°C 32 W EAS Avalanche Energy, Single Pulsed (Note 3) 220 mJ Thermal Resistance Junction−to−Ambient – Steady State (Note 1) 62 °C/W Thermal Resistance Junction−to−Ambient –t ≤ 5 s (Note 1) 3.3 °C/W (Note 2) R JA Note : 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [2 oz] including traces). 2. Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2% 3. Limited by Tjmax, starting TJ = 25°C, L = 0.1mH,RG = 25Ω, IAS = 35A, VGS =10V. Part not recommended for use above this value - 1- 2015-3-26 PTD3004 30V/50A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V Zero Gate Voltage Drain current(Tc=25℃) VDS=24V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=24V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μ 1.2 1.8 2.5 V RDS(ON) Drain-Source On-State Resistance note A A VGS=10V, ID=30A 7.5 10 mΩ RDS(ON) Drain-Source On-State Resistance note A VGS=5V, ID=20A 9 13 mΩ -- 1500 -- pF -- 300 -- pF -- 135 -- pF -- 11 -- nC V(BR)DSS IDSS -- Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) note B Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=15V,VGS=0V, f=1MHz VGS=10V VGS=4.5V Qgs Gate-Source Charge Q gd Gate-Drain Charge 9 VDS=15V,ID=10A, VGS=10V nC -- 25 -- nC -- 5 -- nC -- 22 -- nS Switching Characteristics note B t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=10A, -- 8 -- nS t d(off) Turn-Off Delay Time RG=4.7Ω, -- 9 -- nS tf Turn-Off Fall Time -- 6 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) ISD Source-drain current(Body Diode) Tc=25℃ -- -- 50 A VSD Forward on voltage IS=20A,VGS=0V -- 0.82 1.2 V trr Reverse Recovery Time Tj=25℃,ISD=20A, -- 22 -- nS Qrr Reverse Recovery Charge -- 15 -- nC VGS=0V di/dt=100A/μs Note: A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2% B:Guranteed by design, not subject to production testing. - 2- 2015-3-26 PTD3004 30V/50A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) ID, Drain-Source Current (A) Typical Characteristics VDS, Drain -Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig2. Transfer Characteristics RDSON, Normalized Is- Reverse Drain Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Vsd Source-Drain Voltage (V) Figure4. Source- Drain Diode Forward ID - Drain Current (A) VGS, Gate-Source Voltage (V) Fig3. Normalized On-Resistance Vs. Temperature VDS, Drain -Source Voltage (V) Qg Gate Charge (nC) Figure 5 .Gate Charge Vs. Gate-Source Voltage Fig6. Maximum Safe Operating Area - 3- 2015-3-26 PTD3004 30V/50A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Tj - Junction Temperature (°C) VDS , Drain-Source Voltage (V) Fig7. Threshold Voltage Vs. Temperature Fig8. Typical Capacitance Vs.Drain-Source Voltage Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms - 4- 2015-3-26