KND2803A

KIA 150A，30V N-CHANNEL MOSFET KNX2803A SEMICONDUCTORS 1. Features n RDS(on)=2.2mΩ（typ.）@ VGS=10V n Low On-Resistance n Fast Switching n 100% Avalanche Tested n Repetitive Avalanche Allowed up to Tjmax n Lead-Free, RoHS Compliant 2. Features KNX2803A designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. 3. Pin configuration 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 sep. 2019 150A，30V N-CHANNEL MOSFET KIA KNX2803A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KNP2803A TO-220 KIA KNB2803A TO-263 KIA KND2803A TO-252 KIA 5. Absolute maximum ratings (TC=25 ºC , unless otherwise specified) Ratings Symbol Units TO-252 TO-263/220 Parameter Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Continuous drain current @VGS=10V,TC=25 ºC,(See Fig2) ID 150 A Pulsed drain current tested TC=25 ºC (Sillicon Limit) IDM 600 A Avalanche energy single pulse2 EAS 625 mJ Maximum Power dissipation TC=25 ºC PD Maximum junction temperature TJ 175 °C TSTG -55~+175 °C IS 150 A Storage temperature range Diode continuous forward current TC=25 ºC1 50 160 W 6. Thermal characteristics Parameter Symbol θJC Thermal resistance,Junction-to-case 2 of 5 TO-252 3.0 Rating TO-263/220 0.93 Rev 1.1 sep. 2019 Unit ºC/W KIA 150A，30V N-CHANNEL MOSFET KNX2803A SEMICONDUCTORS 7. Electrical characteristics Parameter Off Characteristics Drain-source breakdown voltage Symbol Drain-to-source leakage current IDSS Gate-to-source leakage current IGSS On characteristics Gate threshold voltage Static drain-source on-resistance1 Static drain-source on-resistance1 Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain (Miller)charge Resistive switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time Source-drain body diode characteristics Diode forward voltage1 Reverse recovery time Reverse recovery charge (TC=25°C,unless otherwise notes) Conditions Min Typ Max Unit BVDSS VGS(th) RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd VGS=0V,ID=250μA VDS=24V ,VGS=0V TC=125 ºC VGS=20V,VDS=0V VGS=-20V,VDS=0V 30 - - 1 100 100 -100 V μA μA nA nA VDS=VGS, ID=250μA VGS=10V,ID=40A VGS=4.5V,ID=40A 0.8 - 1.3 2.2 2.8 2.0 3.0 4.0 V mΩ mΩ - 4050 680 355 110 35 14 - - 19 50 20 26 - nS - 32 33 1.3 - V ns nC VDS=15V,VGS=0V,f=1.0MHz VDS=15V,ID=20A,VGS=4.5V Td(ON) trise VDD=15V,ID=10A,VGS=4.5V, RG=6.8Ω Td(OFF) tfall TJ=25°C,unless otherwise notes VSD VGS=0V,ISD=20A trr ISD=30A,diF/dt=100A/μs, TJ=25°C, VGS=0V Qrr Note: 1. Pulse width