KND3203B

KIA 100A，30V N-CHANNEL MOSFET KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 1. Features n n n n n RDS(on)=3.1mΩ@ VGS=10V Uses CRM(CQ) advanced Trench MOS technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria 2. Applications n n n Motor control and drive Battery management UPS (Uninterrupible Power Supplies) 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source Rev 1.0 JAN 2019 KIA 100A，30V N-CHANNEL MOSFET KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 4. Ordering information Part Number Package Brand KND3203B TO-252 KIA 5. Absolute maximum ratings Parameter Symbol Drain-source voltage (TA=25°C,unless otherwise noted) Units Rating VDS 30 TC=25ºC(Silicon limit) Continuous drain current V 100 TC=25ºC(Package limit) ID TC=100ºC(Silicon limit) 80 A 72 A Pulse drain current (TC = 25°C, tp limited by Tjmax) IDP 320 A Avalanche energy, single pulse (L=0.5mH) EAS 90 mJ Gate-Source voltage VGS +20 V Power dissipation (TC = 25°C) P tot 101 W TJ,TSTG -55- 150 °C Operating junction and storage temperature 6. Thermal characteristics Parameter Symbol Max Unit Thermal resistance, Junction-ambient RθJA 105 ºC/W Thermal resistance, Junction-case RθJC 1.24 ºC/W 2 of 6 Rev 1.0 JAN 2019 100A，30V N-CHANNEL MOSFET KIA KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 7. Electrical characteristics Parameter (TA=25°C,unless otherwise noted) Test Conditions Min Typ Max Units Symbol Drain-source breakdown voltage BVDSS VGS=0V,IDS=250μA 30 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 1.3 1.8 2.3 V VDS=30V, VGS=0V, TJ=25°C - - 1 VDS=24V, VGS=0V, TJ=125°C - - 10 VGS=20V, VDS=0V - - 100 VGS=10V,ID=24A,TJ=25°C - 3.1 4.0 VGS=4.5V,ID=20A - 4.7 7.0 VDS=5V,ID=30A - 73 - - 2340 - - 460 - Zero gate voltage drain current IDSS Gate-source leakage current IGSS Drain-source on-resistance RDS(on) Forward transconductance gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 305 - Turn-on delay time td(on) - 11 - Rise time Turn-off delay time Fall time VDS=30V,VGS=0V, f=1MHz tr VDD=15V, ID=30A, - 102 - td(off) RG_ext=3Ω,VGS=10V - 34 - - 95 - - 50 - - 9.5 - - 13.2 - tf μA nA mΩ S pF nS Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS=0V, VGS=0V,f=1MHz - 1.4 - Ω Body Diode forward voltage VSD VGS=0V,ISD=200A - - 1.3 V Body Diode Reverse Recovery Time trr IF=30A, - 21 - nS Body Diode Reverse Recovery charge Qrr di/dt=100A/μs - 12 - nC VDS=15V, VGS=10V ID=30A, f=1MHz 3 of 6 Rev 1.0 JAN 2019 nC KIA 100A，30V N-CHANNEL MOSFET KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 8.Test circuits and waveforms 4 of 6 Rev 1.0 JAN 2019 KIA 100A，30V N-CHANNEL MOSFET KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 5 of 6 Rev 1.0 JAN 2019 KIA 100A，30V N-CHANNEL MOSFET KNX3203B SEMICONDUCTORS SEMICONDUCTOR S 6 of 6 Rev 1.0 JAN 2019