PD616BA

PD616BA N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 7mΩ 55A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C 2 TC = 100 °C Pulsed Drain Current 1 Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation 55 ID 35 IDM 120 IAS 23 EAS 27 A mJ 38 PD TC = 100 °C W 15 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RJC 3.3 Junction-to-Ambient RJA 62.5 UNITS °C / W 1 Pulse width limited by maximum junction temperature. Package limitation current is 30A 2 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 VGS(th) VDS = VGS, ID = 250A 1.35 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Gate Threshold Voltage Drain-Source On-State Resistance1 RDS(ON) V 1.7 3 VGS = 4.5V, ID = 15A 7 9.5 VGS = 10V , ID = 20A 5.6 7 nA A mΩ E-09-3 REV 1.0 1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PD616BA TO-252 Halogen-Free & Lead-Free Forward Transconductance 1 gfs VDS = 5V, ID = 20A 50 S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge 821 VGS = 0V, VDS = 15V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz Gate-Source Charge Gate-Drain Charge 2 Turn-On Delay Time Rise Time 2 VDS = 15V , ID = 20A Qgs 2 2 9.2 5.2 td(on) 27 td(off) nC 1.9 Qgd tr Turn-Off Delay Time Fall Time 2 Ω 2.2 17.2 Qg(VGS=4.5V) 2 pF 96 Qg(VGS=10V) 2 159 VDS = 15V 23 ID  20A, VGS = 10V, RGEN =6Ω 51 tf nS 24 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current Forward Voltage 3 1 IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 20A, VGS = 0V IF = 20A, dlF/dt = 100A / S 55 A 1.2 V 8.6 nS 1.7 nC Pulse test : Pulse Width  300 sec, Duty Cycle  2％. Independent of operating temperature. 3 Package limitation current is 30A 1 2 E-09-3 REV 1.0 2 TO-252 Halogen-Free & Lead-Free Output Characteristics VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=3.5V 32 Transfer Characteristics 30 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 40 VGS=3V 24 16 8 VGS=2.5V 0 0 PD616BA N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM 1 2 3 24 18 12 25℃ 6 125℃ -20℃ 0 4 0 VDS, Drain-To-Source Voltage(V) 1 2 3 4 VGS, Gate-To-Source Voltage(V) Capacitance Characteristic On-Resistance VS Temperature 1000 1.8 CISS 800 C , Capacitance(pF) Normalized Drain to Source ON-Resistance 900 1.6 1.4 1.2 1.0 VGS=10V ID=20A 0.8 700 600 500 400 300 200 COSS 100 CRSS 0 0.6 -50 -25 0 25 50 75 100 125 0 150 5 TJ , Junction Temperature(˚C) 20 25 30 Source-Drain Diode Forward Voltage 100 VDS=15V ID=20A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 15 VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics 10 10 6 4 2 150℃ 25℃ 10 1 0.1 0 0 4 8 12 16 0.0 20 Qg , Total Gate Charge(nC) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-To-Drain Voltage(V) E-09-3 REV 1.0 3 PD616BA N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 Halogen-Free & Lead-Free Safe Operating Area Single Pulse Maximum Power Dissipation 200 1000 180 Operation in This Area is Limited by RDS(ON) ↓ 140 120 Power(W) ID , Drain Current(A) 100 Single Pulse RθJC = 3.3˚C/W TC=25˚C 160 10 1ms NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.3˚C/W 4.Single Pulse 80 60 10ms 40 100ms 20 DC 0 0.001 1 0.1 100 1 10 100 0.01 VDS, Drain-To-Source Voltage(V) 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 1 Duty cycle=0.5 0.05 0.1 0.2 Notes 0.02 0.01 0.1 single pulse 0.01 0.0001 1.Duty cycle, D= t1 / t2 2.RthJC = 3.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] E-09-3 REV 1.0 4