XNM6N60T

Xiner XNM6N60T 600V，6A，Trench-FS IGBT Features        Advanced Trench+FS (Field Stop) IGBT technology Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 6A. Easy parallel switching capability due to positive Temperature coefficient in Vce. 10uS Short-Circuit Fast switching High input impedance Pb- Free product Schematic Diagram Applications  Home applications  Intelligent power module. TO-252 Electrical characteristics(TJ = 25°C unless otherwise noted) Symbol V(BR)CES Parameter Collector - Emitter breakdown voltage Test conditions Units Min. Typ. Max. VGE = 0V, ID =250uA V 600 — — V — 2.1 2.4 V — 2.3 — V 4.0 5.4 6.5 IF=6A,TC=25°C V — 1.7 2.1 IF=6A,TC=150°C V — 1.3 — — — 200 -200 — — — — 25 VGE=15V, VCE(sat) Collector-Emitter Saturation IC=6A,TC=25°C voltage VGE=15V, IC=6A,TC=150°C VGE(th) Gate threshold voltage VF Diode forward voltage IGES IGESR ICES Gate to Emitter Forward Leakage Gate to Emitter reverse Leakage Zero gate voltage collector current VGE= VCE, Ic = 0.25mA Vge=+30V nA Vge=-30V VCE =600V uA Shenzhen Invsemi Co., Ltd