WSF30150

WSF30150 N-Ch MOSFET Product Summery General Description The WSF30150 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 2.3mΩ 110A Applications The WSF30150 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z %DWWHU\SURWHFWLRQ z Load Switch Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Steady State Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 110 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 68 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 19 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 16 A Pulsed Drain Current2 192 A IDM Single Pulse Avalanche Energy3 144.7 mJ Avalanche Current 53.8 A PD@TC=25℃ Total Power Dissipation4 62.5 W PD@TA=25℃ Total Power Dissipation4 EAS IAS 2.42 W Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 2.4 ℃/W TSTG www.winsok.tw Page 1 Rev 2: May.2019 WSF30150 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS △BVDSS/△TJ Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.021 --- V/℃ Static Drain-Source On-Resistance VGS=10V , ID=30A --- 2.3 4 VGS=4.5V , ID=15A --- 4.3 6 1.2 1.6 2.5 V --- -5.73 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 RDS(ON) VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current VGS=VDS , ID =250uA mΩ uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 26.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 --- Ω Qg Total Gate Charge (4.5V) --- 70 --- Qgs Gate-Source Charge --- 12 --- Qgd Gate-Drain Charge --- 17 --- Turn-On Delay Time --- 11 --- --- 120 --- --- 25 --- Fall Time --- 60 --- Ciss Input Capacitance --- 3500 --- Coss Output Capacitance --- 386 --- Crss Reverse Transfer Capacitance --- 358 --- IS Continuous Source Current1,5 --- --- 90 A ISM Pulsed Source Current2,5 --- --- 360 A VSD Diode Forward Voltage2 --- --- 1.2 V Td(on) Tr Td(off) Tf Rise Time Turn-Off Delay Time VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3Ω ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ nC ns pF Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4 .The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: May.2019 WSF30150 N-Ch MOSFET Typical Characteristics 210 6.0 ID=12A VGS=10V 150 5.0 VGS=7V 120 RDSON (mΩ) ID Drain Current (A) 180 VGS=5V 90 VGS=4.5V 4.0 VGS=3V 60 3.0 30 0 0 0.3 0.6 0.9 1.2 VDS , Drain-to-Source Voltage (V) 2.0 1.5 2 Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 10 12 ID=15A 8 6 TJ=175℃ TJ=25℃ 4 2 8 ( VGS Gate to Source Voltage V) IS Source Current(A) 10 6 4 2 0 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 0 1.2 60 80 2.0 diode Normalized On Resistance Normalized VGS(th) 40 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 1.5 20 1 0.5 1.5 1.0 0.5 0 -50 25 100 TJ ,Junction Temperature (℃ ) -50 175 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 25 100 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Rev 2: May.2019 WSF30150 N-Ch MOSFET 1000.00 10000 F=1.0MHz 10us 100.00 100us 1000 ID (A) 10.00 Coss Crss 10ms 100ms DC 1.00 100 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 10 100 VDS (V) VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) Capacitance (pF) Ciss DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 2: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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