WSF60120

WSF60120 N-Ch MOSFET General Description Product Summery The WSF60120 is the highest performance SGT N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 3.0mΩ 110A Applications The WSF60120 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V 1 110 A 1 66 A 240 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 101 mJ IAS Avalanche Current 45 A 4 83 W 4 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 55 ℃/W --- 1.5 ℃/W Rev:1.0 May.2019 WSF60120 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 3.0 3.6 VGS=4.5V , ID=15A. --- 4.4 5.4 1.2 --- 2.3 VGS=VDS , ID =250uA mΩ V --- -5.68 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 65 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.7 1.0 Ω Qg Total Gate Charge (4.5V) --- 58 --- Qgs Gate-Source Charge --- 16 --- Qgd Gate-Drain Charge --- 4 --- --- 18 --- --- 8 --- --- 50 --- Fall Time --- 10.5 --- Ciss Input Capacitance --- 3458 --- Coss Output Capacitance --- 1522 --- Crss Reverse Transfer Capacitance --- 22 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 55 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.3 V --- 24 --- nS --- 85 --- nC Td(on) Tr Td(off) Tf VDS=30V , VGS=4.5V , ID=20A Turn-On Delay Time VDD=30V , VGS=10V , Rise Time RG=3Ω, RL=1.5Ω. Turn-Off Delay Time VDS=30V , VGS=0V , f=1MHz mV/℃ uA nC ns pF Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=20A ,dI/dt=100A/µs,TJ=25℃ Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t