HR13003

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors HR13003 TRANSISTOR (NPN) TO-126 FEATURES High total power disspation. (pc=1.25w) MARKING:MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Dissipation 1.25 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ 3.EMITTER 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 480 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB= 600V,IE=0 100 µA Emitter cut-off current IEBO VEB= 6 V,IC=0 100 µA hFE1 VCE= 10V, IC= 250 µA 5 hFE2 VCE= 10 V, IC= 200mA 9 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA 0.8 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA 1.2 V Transition frequency fT VCE=10V, IC=100mA f =1MHz Fall time tf Storage time ts DC current gain 40 5 MHz IC=1A, IB1=-IB2=0.2A VCC=100V 0.8 µs 3 .5 µs CLASSIFICATION OF hFE2 Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 Typical Characteristics HR13003