CMD50N10

CMD50N10/CMU50N10 100V N-Channel MOSFET General Description Product Summary The 50N10 uses advanced trench BVDSS RDSON ID 100V 17mΩ 50A technology and design to provide excellent RDS(ON). This device is Applications ideal for PWM, load switching and DC-DC Converters general purpose applications. Power switching application TO-252/251 Pin Configuration Features D Low On-Resistance High Reliability Capability with Passivation G S 100% avalanche tested TO-252 (CMD50N10) RoHS Compliant G D S TO-251 (CMU50N10) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Sou ce Voltage ±25 V ID@TC=25℃ Continuous Drain Current 50 A ID@TC=100℃ Continuous Drain Current 38 A IDM Pulsed Drain Current 150 A EAS Single Pulse Avalanche Energy1 200 mJ PD@TC=25℃ Total Power Dissipation 100 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter R θJA Thermal Resistance Junction-ambient (PCB mount) R θJC CA01Q2 Thermal Resistance Junction -Case www.cmosfet.com Typ. Max. Unit --- 62 ℃/ W --- 1.5 ℃/ W Page 1 of 4 CMD50N10/CMU50N10 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 100 --- --- VGS=10V , ID=25A --- 14 17 VGS=4.5V , ID=10A --- 18 25 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 3 V IDSS Drain-Source Leakage Current VDS= 100V, VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS ±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V, ID=20A --- 15 --- S VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω --- 50 --- --- 10 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf Gate-Drain Charge VDD=80V , ID=50A VGS =0 to 10V Turn-On Delay Time --- 8 --- --- 10 --- Rise Time VDD=20V , VGS=10V , I D =50A --- 5 --- Turn-Off Delay Time RG =3.5Ω --- 30 --- mΩ nC ns Fall Time --- 5 --- Ciss Input Capacitance --- 3600 --- Coss Output Capacitance --- 730 --- Crss Reverse Transfer Capacitance --- 65 --- Min. Typ. Max. Unit --- --- 50 A VDS=25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Continuous Source Current Conditions VG=VD=0V , Force Current ISM Pulsed Source Current --- --- 150 A VSD Diode Forward Voltage VGS=0V , IS=25A --- --- 1.2 V trr Reverse Recovery Time --- 97 A Reverse Recovery Charge IF = 8A , VR=50V diF / dt = 100 A/μs --- Qrr --- --- 178 V Note : 1.The test condition is VDD=50V,VGS=10V,L=0.5mH,I D=28A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01Q2 www.cmosfet.com Page 2 of 4 CMD50N10/CMU50N10 100V N-Channel MOSFET Typical Characteristics 10V 5V 160 ID=f(VDS ); Tj =25°C 160 4.5V 120 80 4V 40 3.5V 0 0 2 3 4 5 25℃ 175℃ 80 0 6 1 2 V DS , Drain-to-Source Voltage (V) 3 4 5 V GS (V) Output Characteristics 30 -55℃ 40 3V 1 ID=f(VGS); VDS=6V 120 I D (A) I D , Drain Current (A) 200 Transfer characteristics 50 RDS(on) =f(Tj );ID=25A;VGS=10V 3.5V 25 4V RDS(on) =f(ID); Tj =25℃ 3V 40 4.5V 20 30 15 20 10 5 -60 5V -20 20 60 100 140 10 180 10V 0 40 Tj (℃) 300μA 60μA 1.5 IF, (A) VGS (th) (V) 10 VGS (th) =f（Tj）；VGS=VDS 2.0 120 160 ID(A) Dra i n -s ou rce o n - state resi stance Drain-Source on-state resistance v 2.5 80 1.0 10 3 IF=f(VSD) 2 175℃ 25℃ 10 1 0.5 0.0 -60 -20 20 60 100 140 180 T j (℃) gat e t h resh o l d vol t a ge CA01Q2 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , (V) Forward characteristics of reverse diode www.cmosfet.com Page 3 of 4 CMD50N10/CMU50N10 100V N-Channel MOSFET Typical Characteristics 4 10 30 Capacitance (pF) R DS(on)- On-Resistance (mΩ) 40 VGS=4.5V 20 VGS=10V 10 0 0 10 20 30 50 40 Ciss 3 10 Coss 10 2 10 1 Crss C=f（VDS）; VGS=0V; f=1MHZ 5 0 10 60 50 10μS 40 ID (A ) ID (A ) 1μS 100μS 10 30 Typ.Characteristics ID =f(VDS ); TC =25°C;D=0 100 25 20 VDS (Volts) ID - Drain Current (A) On-Resistance vs. Drain Current 1000 15 ID=f（TC）;VGS≥6V 30 20 1mS 10 1 0.1 1 0 0 100 10 50 100 V DS (V) Safe operating area 120 Drain current Ptot =f(TC);VGS≥6V Z t hJC（K/W） Pt ot (W) 80 60 40 10 1 10 0 10 Z thJC =f(tp) -1 0.5 0.1 0.05 0.01 10 20 -2 Single Pulse -3 50 100 150 200 10 -6 10 TC (°C) Po w er d i s s i p at i o n CA01Q2 200 TC ( ℃) 100 0 0 150 www.cmosfet.com 10 -5 10 -4 -3 -2 -1 10 10 10 10 t p（s） M ax . t r an s i en t t h er m al i m p ed an c e 0 Page 4 of 4