CMD5951

CMD5951/CMU5951 P-Channel Silicon MOSFET General Description Product Summary The 5951 uses advanced trench technology and design to provide BVDSS RDSON ID -100V 65mΩ -30A excellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications. Inverters Motor drive DC / DC converter Features TO-252/251 Pin Configuration P-Channel Low ON-resistance. D D Fast Switching G 100% avalanche tested S TO-252 (CMD5951) Absolute Maximum Ratings G G D S TO-251 S (CMU5951) Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current -30 A IDM EAS Pulsed Drain Current Single Pulse Avalanche Energy -90 A 270 mJ PD@TC=25℃ Total Power Dissipation 120 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range 150 ℃ Thermal Data Symbol CA01S2 Typ. Max. Unit RθJA Thermal Resistance Junction-ambient Parameter --- 50 ℃/W RθJC Thermal Resistance Junction-case --- 1.25 ℃/W www.cmosfet.com Page 1 of 2 CMD5951/CMU5951 P-Channel Silicon MOSFET Electrical Characteristics (TJ=25 Symbol BVDSS , unless otherwise noted) Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=-250uA -100 --- --- VGS=-10V, ID=-20A --- 50 65 VGS=-4.5V , ID=-10A --- 55 70 m RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250 uA -2 --- -4 V IDSS Drain-Source Leakage Current VDS=-100V ,VGS=0V --- --- -1 uA IGSS Gate-Source Leakage Current VGS --- --- 100 nA gfs Forward Transconductance VDS=-15V, ID=-10A --- 16 --- S 20V , VDS=0V Qg Total Gate Charge I D = -15A --- 90 --- Qgs Gate-Source Charge V DS = -50V --- 15 --- Qgd Gate-Drain Charge VGS = -10V --- 35 --- Turn-On Delay Time Td(on) Tr Td(off) Tf nC V DD = -50V --- 20 --- Rise Time I D = -15A --- 80 --- Turn-Off Delay Time R GEN =9.1Ω V GS =-10V --- 45 --- --- 65 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS= -25V, VGS=0V , f=1MHz ns --- 5500 --- --- 750 --- --- 400 --- Min. Typ. Max. Unit --- 90 --- ns --- 70 --- nC --- --- -1.2 V pF Diode Characteristics Symbol Parameter Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IS=-15A dI/dt=-100A/μs VSD Diode Forward Voltage VGS=0V , IS=-15A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01S2 www.cmosfet.com Page 2 of 2