SM600R65CT9RL

30V /36A Single N Power MOSFET SM600R65C N-Channel Super Junction Power MOSFET Description IRF600R65C is power MOSFET using advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low ID 7A VDSS 650V Rdson(max) 0.6Ω(VGS=10V, ID=3.5A) Qg 25nC switching loss. General Features ● 7A,650V,RDS(on)(max)= 0.6ohm@VGS=10V ● Low Gate charge ● Low Crss ● Fast Switching ● Improved dv/dt Capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220 TO-252 V01 1 www.sourcechips.com TO-220F 30V /36A Single N Power MOSFET SM600R65C Order Information Order Information Marking ID Package SM600R65CT9RL 600R65C TO252-2L SM600R65CT2TL 600R65C TO220F-3L SM600R65CT1TL 600R65C TO220-3L Packing Type Supplied As 3000 Units on Reel 、 1000 units on Box、5000 units on Carton 1000 units on Box 5000 units on Carton Absolute Maximum Ratings Ta=25 ºC unless otherwise noted Parameter Symbol Value Unit Drain-source Voltage VDS 650 V Gate-source Voltage VGS ±30 V Continuous Drain Current(Ta=25 ) ID 7 A Drain Current-Pulsed IDM 21 A ℃ TO252 Total Dissipation (Ta=25 ) ℃ 52 TO220 PD 63 TO220F W 28 Junction Temperature TJ 150 ºC Storage Temperature TSTG -65 to 150 ºC Single Pulse Avalanche Energy EAS 165 mJ ESD HBM(Human Body Mode) ≥2000 V ESD MM(Machine Mode) ≥200 V Electrical Characteristics Ta = 25ºC PARAMETER Drain-source Breakdown Voltage Symbol Test Condition MIN BVDSS VGS=0V, ID=250μA 650 VGS(TH) VGS=VDS ,ID=250μA 2.0 Drain-source Leakage Current IDSS Drain-Source Diode Forward Voltage VSD VGS=0V IS=7A Gate-body Leakage Current (VDS = 0) IGSS VGS=±30V Static Drain-source On Resistance RDS(ON) Gate Threshold Voltage Typ MAX UNIT V 4.0 V VDS=650V,VGS=0V 1 uA ， 1.3 V ±100 nA 0.6 Ω VGS=10V,ID=3.5A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant in temperature etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings 2 V01 www.sourcechips.com SM600R65C 30V /36A Single N Power MOSFET Thermal Characteristics Ta=25℃ PARAMETER Symbol TYP MAX UNIT 2.5 ºC/W 3.1 ºC/W 63 ºC/W 80 ºC/W TO252 Maximum Junction-to-case RQJC TO220F,TO220 TO252 Maximum Junction-to-Ambient RQJA TO220F,TO220 Note1: Ensure that the channel temperature does not exceed 150ºC ， Note2: VDD=50V,Tch=25 ºC(initial),IAS=7A Rg=25Ω Note3: This transistor is sensitive to electrostatic and should be handled with care Dynamic Characteristics Ta = 25 ºC PARAMETER Symbol Input Capacitance Ciss output Capacitance Coss Reverse Transfer Capacitance Test Condition MIN VDS=25V,VGS=0V, f=1.0MHZ Crss TYP MAX UNIT 380 pF 110 pF 7 pF Switching Characteristics Ta=25 ºC PARAMETER Symbol Turn-On Delay Time Td(on) Test Condition MIN TYP MAX UNIT 13 nS 10 nS 85 nS Turn-On Rise Time Tr Turn-Off Delay Time Td(off) Turn-Off Rise Time Tf 14 nS Total Gate Charge Qg 25 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 2.7 nC VDS=400V,ID=7A, VGS=10V ,RG=20Ω VDS=480V ，I =7A, V D =10V GS Drain-Source Diode Maximum Ratings and Characteristics Ta=25 ºC PARAMETER Symbol Max. Diode Forward Current Is Test Condition TYP MAX UNIT 7 A Pulsed Source Current Ism Integral Reverse P-N Junction Diode in the MOSFET Diode Forward Voltage VSD VGS=0V,IS=7A 0 VGS=0V,IS=7A, dIF/dt=100A/μs 190 nS 2.3 μC Reverse Recovery Time Reverse Recovery Charge Trr Qrr 3 V01 MIN www.sourcechips.com 21 1.3 V 30V /36A Single N Power MOSFET Test Circuit Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform 4 V01 www.sourcechips.com SM600R65C 30V /36A Single N Power MOSFET SM600R65C Typical Characteristics Curve Figure 1: Output Characteristics Figure 2: Transfer Characteristics Figure 3: On Resistance Vs Drain Current Operating Area Figure 4: Safe 5 V01 www.sourcechips.com 30V /36A Single N Power MOSFET Figure5: On Resistance Vs Junction Temperature SM600R65C Figure6: Capacitance Characteristics Typical Characteristics Curve Figure7: Gate Charge Waveform Forward Voltage Figure8: Source-Drain Diode Figure9: Breakdown Voltage Vs Junction Temperature 6 V01 www.sourcechips.com 30V /36A Single N Power MOSFET Outline Information (TO252-2L) 7 V01 www.sourcechips.com SM600R65C 30V /36A Single N Power MOSFET Outline Information (TO220F-3L) Outline Information (TO220-3L) 8 V01 www.sourcechips.com SM600R65C