SMIRF4N65T9RL

30V /36A Single N Power MOSFET SMIRF4N65 N-Channel Enhancement Mode Power MOSFET Description SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in ID 4A VDSS 650V Rdson（max） 2.8Ω(VGS=10V, ID=2A) Qg 13.7nC the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC/DC converters and H-bridge PWM motor drivers. General Features ● 4A,650V,RDS(on)(typ.)= 2.3ohm@VGS=10V ● Low Gate charge ● Low Crss ● Fast Switching ● Improved dv/dt Capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220 TO-252 V01 1 www.sourcechips.com TO-220F TO-251 30V /36A Single N Power MOSFET SMIRF4N65 Order Information Order Information Marking ID Package Packing Type Supplied As SMIRF4N65TBRL IRF4N65 TO251-3L 2400 Units on Box SMIRF4N65T9RL IRF4N65 TO252-2L 3000 Units on Reel SMIRF4N65T2TL IRF4N65 TO220F-3L 1000 units on Box 5000 units on Carton SMIRF4N65T1TL IRF4N65 TO220-3L 、 1000 units on Box、5000 units on Carton Absolute Maximum Ratings Ta=25 ºC unless otherwise noted Parameter Symbol Value Unit Drain-source Voltage VDS 650 V Gate-source Voltage VGS ±30 V Continuous Drain Current(Ta=25 ) ID 4 A Drain Current-Pulsed IDM 16 A ℃ TO251 Total Dissipation (Ta=25 ) ℃ 55 TO252 50 PD W TO220 30 TO220F 30 Junction Temperature TJ 150 ºC Storage Temperature TSTG -65 to 150 ºC Single Pulse Avalanche Energy EAS 130 mJ ESD HBM(Human Body Mode) ≥2000 V ESD MM(Machine Mode) ≥200 V Electrical Characteristics Ta = 25ºC PARAMETER Drain-source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS Test Condition VGS=0V, ID=250μA TYP MAX 650 UNIT V 4.0 V 25 uA VGS=0V IS=4A 1.4 V IGSS VGS=±30V ±100 nA RDS(ON) VGS=10V,ID=2A 2.8 Ω VGS(TH) VGS=VDS ,ID=250μA Drain-source Leakage Current IDSS VDS=650V,VGS=0V Drain-Source Diode Forward Voltage VSD Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance V01 MIN 2.0 ， 2 www.sourcechips.com 2.3 SMIRF4N65 30V /36A Single N Power MOSFET Thermal Characteristics Ta=25℃ PARAMETER Symbol TYP MAX 2.5 TO251,TO252 Maximum Junction-to-case (note1) ºC/W RQJC 3 TO220F,TO220 TO251,TO252 Maximum Junction-to-Ambient UNIT 63 RQJA TO220F,TO220 ºC/W 80 Note1: Surface Mounted on FR4 Board, t ≤ 10 sec Dynamic Characteristics Ta = 25 ºC PARAMETER Symbol Input Capacitance Ciss output Capacitance Coss Test Condition MIN TYP MAX 610 UNIT pF 62 85 pF 7 10 pF TYP MAX UNIT 20 40 nS 30 70 nS Td(off) 25 100 nS Turn-Off Rise Time Tf 35 85 nS Total Gate Charge Qg 13.7 nC Gate-Source Charge Qgs 2.9 nC Gate-Drain Charge Qgd 4.6 nC Reverse Transfer Capacitance VDS=25V,VGS=0V, f=1.0MHZ Crss Switching Characteristics Ta=25 ºC PARAMETER Symbol Turn-On Delay Time Td(on) Turn-On Rise Time Turn-Off Delay Time Test Condition MIN Tr VDS=300V,ID=4A,RG=25Ω VDS=160V ，I =4A,V D =10V GS Drain-Source Diode Maximum Ratings and Characteristics Ta=25 ºC PARAMETER Symbol Max. Diode Forward Current Is Pulsed Source Current Ism Integral Reverse P-N Junction Diode in the MOSFET Diode Forward Voltage VSD VGS=0V,IS=4A Reverse Recovery Time Reverse Recovery Charge V01 Test Condition Trr Qrr VGS=0V,IS=4A, dIF/dt=100A/μs 3 www.sourcechips.com MIN TYP MAX UNIT 4 A 16 1.4 V 390 nS 1.5 μC 30V /36A Single N Power MOSFET Test Circuit Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform V01 4 www.sourcechips.com SMIRF4N65 30V /36A Single N Power MOSFET Typical Electrical SMIRF4N65 And Thermal Characteristics Figure 1: Output Characteristics Figure 2: Transfer Characteristics Figure 3: On Resistance Vs Drain Current Figure 4: On Resistance Vs Gate Source Voltage Figure5: On Resistance Vs Junction Temperature Characteristics 5 V01 www.sourcechips.com Figure6: Capacitance 30V /36A Single N Power MOSFET SMIRF4N65 Characteristics Curve Figure7: Gate Charge Waveform Forward Voltage Figure8: Source-Drain Diode Figure9: Breakdown Voltage Vs Junction Temperature 6 V01 www.sourcechips.com 30V /36A Single N Power MOSFET Outline Information (TO251-3L) Outline Information (TO252-2L) 7 V01 www.sourcechips.com SMIRF4N65 30V /36A Single N Power MOSFET Outline Information (TO220F-3L) Outline Information (TO220-3L) 8 V01 www.sourcechips.com SMIRF4N65 30V /36A Single N Power MOSFET 9 V01 www.sourcechips.com SMIRF4N65