SM418T9RL

H N03H 30V /36A Single N Power MOSFET SM418T9RL 30V /36A Single N Power MOSFET N V General Description 30V /36A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation SM418T9RL TO-252 36N03 2500 Parameter 36N03H 30 V 7.7 mΩ 12.1 mΩ 36 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 57.6 IAR 11.5 EAR 26.5 TA=25°C A A mJ 50 PD TA=70°C Junction and Storage Temperature Range 28.0 IDM G Repetitive avalanche energy L=0.1mH 36.0 ID W 25* -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 27 41 °C/W 55 66 °C/W 16 26 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage 30V /36A Single N Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM418T9RL Typ Max 30 Units V 1 5 uA ±100 nA 1.9 2.5 V VGS=10V, ID=20A 7.7 11.0 VGS=4.5V, ID=20A 12.1 15.7 Forward Transconductance VDS=5V, ID=20A 81 Diode Forward Voltage IS=1A,VGS=136V 0.72 1.3 mΩ S 1 V 36 A Typ Max Units 1150 1403 pF 180 221 pF 105 124 pF 2.5 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 5 tD(on) Turn-On DelayTime 4.35 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 9.5 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 4.75 3.5 3.48 12.18 nC ns 3.915 IF=-8A, dI/dt=500A/µs 8.7 ns IF=18A, dI/dt=500A/µs 13.5 nC 2 www.sourcechips.com 30V /36A Single N Power MOSFET V01 3 www.sourcechips.com SM418T9RL 30V /36A Single N Power MOSFET V01 4 www.sourcechips.com SM418T9RL