LSG60R2K5HT

LSG60R2K5HT/ LSH60R2K5HT LonFET Lonten N-channel 600V, 1.9A, 2.5Ω LonFETTM Power MOSFET Description Product Summary LonFET VDS @ Tj,max 650V RDS(on),max 2.5Ω device has extremely low on resistance, making it IDM 5.7A especially suitable for applications which require Qg,typ 4.7nC TM Power MOSFET is fabricated using advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 4.7nC)  100% UIS tested  RoHS compliant TO-251 TO-252 D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). Pb S N-Channel MOSFET Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current ( TC = 25°C ) Symbol Value Unit VDSS 600 V ID 1.9 A 1.2 A ( TC = 100°C ) Pulsed drain current 1) IDM 5.7 A Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 30 mJ Avalanche energy, repetitive 3) EAR 0.1 mJ Avalanche current, repetitive 3) IAR 1.9 A PD 18 W 0.15 W/°C -55 to +150 °C Power Dissipation TO-252/ TO-251 ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current IS 1.9 A Diode pulse current IS,pulse 5.7 A Value Unit Thermal Characteristics TO-252 Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 6.7 °C/W Thermal Resistance, Junction-to-Ambient RθJA 102 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Version 1.3,Jan-2020 1 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Package Marking and Ordering Information Device Device Package Marking Units/Tube LSH60R2K5HT TO-251 LSH60R2K5HT 72 LSG60R2K5HT TO-252 LSG60R2K5HT Electrical Characteristics Parameter Units/Reel 2500 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 600 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=600 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=0.95 A - Tj = 25°C - 2.2 2.5 Ω Tj = 150°C - 5.6 - Gate resistance RG f=1 MHz, open drain - 9 - Input capacitance Ciss VDS = 100 V, VGS = 0 V, - 114 - Output capacitance Coss f = 250 kHz - 6.1 - Reverse transfer capacitance Crss - 0.76 - Turn-on delay time td(on) VDD = 300V, ID = 0.95A - 11.8 - Rise time tr RG = 10Ω, VGS=10V - 30 - Turn-off delay time td(off) - 38.8 - Fall time tf - 65.4 Ω Dynamic characteristics pF ns - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=0.95A, - 1.5 - Gate to drain charge Qgd VGS=0 to 10 V - 2.0 - Gate charge total Qg - 4.7 - Gate plateau voltage Vplateau - 5.5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=0.95A - 1.1 - V Reverse recovery time trr VR=400 V, IF=1.9A, - 190 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 1.2 - μC Peak reverse recovery current Irrm - 6.2 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 2A, VDD = 60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 1.3,Jan-2020 2 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Common Source Tc = 25°C Pulse test Figure 2. Transfer Characteristics Common Source Tc = 25°C VDS=20 V Pulse test VGS=10V VGS=7V VGS=6.5V Tc = 25°C Tc = 125°C VGS=6V VGS=5.5V Gate−source voltage VGS (V) Drain−source voltage VDS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10V Tc = 25°C Pulse test IDS=0.25 mA Pulse test Junction temperature Tj (°C) Drain current ID (A) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=0 V IDS=0.25 mA Pulse test VGS=10 V IDS=1 A Pulse test Junction temperature Tj (°C) Junction temperature Tj (°C) Version 1.3,Jan-2020 3 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Notes: f = 250 kHz VGS=0 V Ciss Coss Crss ID = Drain-Source Voltage VDS (V) Total Gate Charge QG (nC) Figure 9. Maximum Safe Operating Area 100us Limited by RDS(on) Figure 10. Power Dissipation vs. Temperature 10us 1ms DC Notes: Tc = 25°C Tj = 150°C Single Pulse Drain-Source Voltage VDS (V) Version 1.3,Jan-2020 Case temperature Tc (°C) 4 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 1.3,Jan-2020 5 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Mechanical Dimensions for TO-251 COMMON DIMENSIONS SYMBOL MM MIN NOM MAX A 2.20 2.30 2.38 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2’ 0.00 0.04 0.10 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.73 E1 4.63 — — e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 TO-251 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSH60R2K5HT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.3,Jan-2020 6 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Mechanical Dimensions for TO-252 COMMON DIMENSIONS mm SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 — 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 6.73 — — 2.286BSC H 9.40 L 1.38 L1 10.10 10.50 1.50 1.75 2.90REF L2 0.51BSC L3 0.88 — 1.28 L4 L5 0.50 — 1.00 1.65 1.80 θ 1.95 0° — 8° TO-252 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSG60R2K5HT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.3,Jan-2020 7 www.lonten.cc LSG60R2K5HT/ LSH60R2K5HT LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.3,Jan-2020 8 www.lonten.cc