LNG05R230

LNH05R230/LNG05R230 Lonten N-channel 50V, 32A, 23mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 50V effect RDS(on).max@ VGS=10V 23mΩ ID 32A transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited Pin Configuration for high efficiency fast switching applications. Features  50V,32A,RDS(ON).max=23mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available D TO-251 TO-252 G S Applications  Motor Drives  UPS  DC-DC Converter Absolute Maximum Ratings Parameter N-Channel MOSFET Pb TC = 25°C unless otherwise noted Symbol Value Unit VDSS 50 V 32 A 20 A IDM 128 A Gate-Source voltage VGSS ±20 V Avalanche energy2) EAS 25 mJ Power Dissipation ( TC = 25°C ) PD 50 W TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Value Unit RθJC 2.5 °C/W Drain-Source Voltage Continuous drain current ( TC = 25°C ) ID Continuous drain current ( TC = 100°C ) Pulsed drain current 1) Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Version 1.1,Jan-2020 1 www.lonten.cc Package Marking and Ordering Information LNH05R230/LNG05R230 Device Device Package Marking LNH05R230 TO-251 LNH05R230 LNG05R230 TO-252 LNG05R230 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 50 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 1.0 --- 2.0 V VDS=50 V, VGS=0 V, TJ = 25°C --- --- 1 μA VDS=40 V, VGS=0 V, TJ = 125°C --- --- 10 μA Drain-source leakage current IDSS Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA VGS=10 V, ID=15 A --- 17 23 mΩ VGS=4.5 V, ID=10 A --- 21 28 mΩ VDS =5 V , ID=20A --- 52 --- S --- 956 --- --- 80 --- --- 65 --- --- 15 --- --- 22 --- --- 45 --- --- 22 --- --- 3.0 --- --- 6.2 --- --- 3.1 --- --- 21.5 --- Drain-source on-state resistance Forward transconductance RDS(on) gfs Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Gate resistance Rg VDS = 25 V, VGS = 0 V, F = 1MHz VDD = 25V,VGS=10V, ID =15A VGS=0V, VDS=0V, F=1MHz pF ns Ω Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDS=25 V, ID=15A, VGS= 10 V nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 32 A Pulsed Source Current ISM --- --- 128 A --- --- 1.2 V --- 17.3 --- ns --- 4.9 --- nC 3) Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V, IS=15A, TJ=25℃ IS=15A,di/dt=100A/us, TJ=25℃ Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD=25V, VGS=10V, L=0.5mH, IAS=10A, RG=25Ω, Starting TJ=25℃. 3: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 1.1,Jan-2020 2 www.lonten.cc LNH05R230/LNG05R230 Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics VGS=4V, 5V,8V,10V Figure 2. Transfer Characteristics Common Source VDS=5 V Pulse test Common Source Common Source T = 25°C Tcc = 25°C Pulse test Pulse test From Bottom to Top VVGS =3.5V =3V GS Tc =125°C VGS=3.5V, 4V,4.5V,6.5V,8V,10V From Bottom to Top Tc = 25°C VGS=2.5V VGS=3V Drain−source voltage VDS (V) Figure 3. Capacitance Notes: f = 1 MHz VGS=0 V Gate−source voltage VGS (V) Characteristics Figure 4. Gate Charge Waveform Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS = 10 V VDS = 25 V ID = 15A Ciss Coss Crss Drain-Source Voltage VDS (V) Total Gate Charge QG (nC) Figure 5. Body-Diode Characteristics Figure 6. Rdson-Drain Current VGS = 4.5V Tc =125°C VGS = 10V Tc = 25°C Source-Drain Voltage VSD (V) Version 1.1,Jan-2020 Drain Current ID (A) 3 www.lonten.cc LNH05R230/LNG05R230 Figure 7. Rdson-Junction Temperature(℃) Figure 8. Maximum Safe Operating Area 10us VGS = 10V ID = 15A 100us Limited by RDS(on) DC 1ms 10ms Notes: T = 25°C c T = 150°C j Single Pulse Drain-Source Voltage V T -Junction Temperation (°C) DS J (V) Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC) D=Ton/T T J,PK R θJA =T +P A In descending oder DM .Z θJA .RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse =2.5℃/W Pulse Width t (s) Version 1.1,Jan-2020 4 www.lonten.cc LNH05R230/LNG05R230 Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 11. Diode Recovery Circuit & Waveform Version 1.1,Jan-2020 5 www.lonten.cc LNH05R230/LNG05R230 Mechanical Dimensions for TO-251 COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 2.20 2.30 2.38 0.087 0.091 0.094 A2 0.97 1.07 1.17 0.038 0.042 0.046 b 0.68 0.78 0.90 0.027 0.031 0.035 b2 0.00 0.04 0.10 0.000 0.002 0.004 b2' 0.00 0.04 0.10 0.000 0.002 0.004 b3 5.20 5.33 5.46 0.205 0.210 0.215 c 0.43 0.53 0.61 0.017 0.021 0.024 D 5.98 6.10 6.22 0.235 0.240 0.245 D1 5.30REF 0.209REF E 6.40 6.60 6.73 0.252 0.260 0.265 E1 4.63 - - 0.182 - - e 2.286BSC 0.090BSC H 16.22 16.52 16.82 0.639 0.650 0.662 L1 9.15 9.40 9.65 0.360 0.370 0.380 L3 0.88 1.02 1.28 0.035 0.040 0.050 L5 1.65 1.80 1.95 0.065 0.071 0.077 TO-251 Part Marking Information Lonten Logo Lonten LNH05R230 ABYWW99 “AB” Foundry & Assembly code Part Number “99” Manufacturing code “YWW” Date Code Version 1.1,Jan-2020 6 www.lonten.cc LNH05R230/LNG05R230 Mechanical Dimensions for TO-252 COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 2.20 2.30 2.38 0.087 0.091 0.094 A1 0.00 - 0.20 0.000 - 0.008 A2 0.97 1.07 1.17 0.038 0.042 0.046 b 0.68 0.78 0.90 0.027 0.031 0.035 b3 5.20 5.33 5.46 0.205 0.210 0.215 c 0.43 0.53 0.61 0.017 0.021 0.024 D 5.98 6.10 6.22 0.235 0.240 0.245 D1 5.30REF 0.209REF E 6.40 6.60 6.73 0.252 0.260 0.265 E1 4.63 - - 0.182 - - e 2.286BSC 0.090BSC H 9.40 10.10 10.50 0.370 0.398 0.413 L 1.38 1.50 1.75 0.054 0.059 0.069 L1 2.90REF 0.114REF L2 0.51BSC 0.020BSC L3 0.88 - 1.28 0.035 - 0.050 L4 0.50 - 1.00 0.020 - 0.039 L5 1.65 1.80 1.95 0.065 0.071 0.077 θ 0° - 8° 0° - 8° TO-252 Part Marking Information Lonten Logo Lonten LNG05R230 ABYWW99 “AB” Foundry & Assembly code Part Number “99” Manufacturing code “YWW” Date Code Version 1.1,Jan-2020 7 www.lonten.cc LNH05R230/LNG05R230 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. 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The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.1,Jan-2020 8 www.lonten.cc