LSG60R380HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Lonten N-channel 600V, 11A, 0.38Ω LonFETTM Power MOSFET Description Product Summary LonFET VDS @ Tj,max 650V RDS(on),max 0.38Ω device has extremely low on resistance, making it IDM 30A especially suitable for applications which require Qg,typ 14.7 nC TM Power MOSFET is fabricated using advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 14.7nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 TO-220MF D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Symbol VDSS ( TC = 25°C ) ID ( TC = 100°C ) Value Unit 600 V 11 A 8.2 A 30 A Pulsed drain current 1) IDM Gate-Source voltage VGSS ±30 V Avalanche energy, single pulse 2) EAS 245 mJ Avalanche current, repetitive 3) IAR 11 A 90 W 0.72 W/°C 31.8 W 0.26 W/°C -55 to +150 °C Power Dissipation TO-251/ TO-252 ( TC = 25°C ) - Derate above 25°C Power Dissipation TO-220MF ( TC = 25°C ) PD - Derate above 25°C Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current IS 11 A Diode pulse current IS,pulse 30 A Version 1.1,Sep-2019 1 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Thermal Characteristics TO-251/TO-252/TO-220 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 1.39 °C/W Thermal Resistance, Junction-to-Ambient RθJA 45 °C/W Tsold 260 °C Value Unit Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Thermal Characteristics TO-220MF Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 3.9 °C/W Thermal Resistance, Junction-to-Ambient RθJA 53 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Package Marking and Ordering Information Device Device Package Marking Units/Tube LSD60R380HT TO-220MF LSD60R380HT 50 LSG60R380HT TO-252 LSG60R380HT LSH60R380HT TO-251 LSH60R380HT 72 LSF60R380HT TO-262 LSF60R380HT 50 LSE60R380HT TO-263 LSE60R380HT 50 Electrical Characteristics Parameter Units/Tube 2500 800 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 600 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=550 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=5.5 A - Tj = 25°C - 0.33 0.38 Ω Tj = 150°C - 0.9 - Gate resistance RG f=1 MHz, open drain - 5.7 - Input capacitance Ciss VDS = 100 V, VGS = 0 V, - 804 - Output capacitance Coss f = 250 kHz - 36.2 - Reverse transfer capacitance Crss - 1.34 - Turn-on delay time td(on) VDD = 400V, ID = 5.5A - 20.6 - Rise time tr RG = 10Ω, VGS=15V - 32 - Turn-off delay time td(off) - 62 - Ω Dynamic characteristics Version 1.1,Sep-2019 2 pF ns www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Fall time tf - 12.5 - Gate charge characteristics Gate to source charge Qgs VDD=400 V, ID=5.5A, - 4.8 - Gate to drain charge Qgd VGS=0 to 10 V - 4.7 - Gate charge total Qg - 14.7 - Gate plateau voltage Vplateau - 6 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=5.5A - 1.2 - V Reverse recovery time trr VR=400 V, IF=5.5A, - 234 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 4.4 - μC Peak reverse recovery current Irrm - 18.7 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 3A, VDD = 60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 1.1,Sep-2019 3 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Common Source Tc = 25°C Pulse test Figure 2. Transfer Characteristics VGS=10V VGS=7V Common Source Tc = 25°C VDS=20 V Pulse test VGS=6.5V VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10V Tc = 25°C Pulse test IDS=0.25 mA Pulse test Junction temperature Tj (°C) Drain current ID (A) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=0 V IDS=0.25 mA Pulse test VGS=10 V IDS=3.5 A Pulse test Junction temperature Tj (°C) Junction temperature Tj (°C) Version 1.1,Sep-2019 4 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss ID = 5.5A Notes: f = 250 kHz VGS=0 V Crss Total Gate Charge QG (nC) Drain-Source Voltage VDS (V) Figure 9.1 Maximum Safe Operating Area Figure 9.2 Maximum Safe Operating Area TO-220MF TO-251/TO-252/ TO-262 10us 100us Limited by Rds(on) 10us 1ms 1ms 100us DC Limited by Rds(on) DC Notes: TC=25℃ TJ=150℃ Single Pulse Notes: TC=25℃ TJ=150℃ Single Pulse Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature TO-220MF TO-251/TO-252/ TO-262 Case temperature Tc (°C) Case temperature Tc (°C) Version 1.1,Sep-2019 5 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 1.1,Sep-2019 6 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Mechanical Dimensions for TO-220MF COMMON DIMENSIONS MM SYMBOL INCH MIN NOM MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.30 0.45 0.60 0.012 0.002 0.024 A4 2.65 2.76 2.96 0.104 0.109 0.117 C 0.40 0.50 0.38 0.016 0.020 0.026 D 15.57 15.87 16.17 0.613 0.625 0.637 H1 6.70REF e 0.264REF 2.54BSC 0.1BSC ØP 3.03 3.18 3.38 0.119 0.125 0.133 L 12.68 12.98 13.28 0.499 0.511 0.523 L1 2.88 3.03 3.18 0.113 0.119 0.125 ØP3 3.15REF 0.124REF F3 3.15 3.30 3.45 0.124 0.130 0.136 G3 1.25 1.35 1.55 0.049 0.053 0.061 b1 1.18 1.28 1.43 0.046 0.050 0.056 b2 0.70 0.80 0.95 0.028 0.031 0.037 TO-220MF Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.1,Sep-2019 Lonten LSD60R380HT ABYWW99 Part Number “99” Manufacturing Code 7 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Mechanical Dimensions for TO-251 COMMON DIMENSIONS SYMBOL MM MIN NOM MAX A 2.20 2.30 2.38 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2’ 0.00 0.04 0.10 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.73 E1 4.63 — — e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 TO-251 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSH60R380HT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.1,Sep-2019 8 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Mechanical Dimensions for TO-252 COMMON DIMENSIONS mm SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 — 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 6.73 — — 2.286BSC H 9.40 L 1.38 10.10 10.50 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 — 1.28 L4 0.50 — 1.00 L5 1.65 1.80 1.95 θ 0° — 8° TO-252 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSG60R380HT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.1,Sep-2019 9 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Mechanical Dimensions for TO-263 COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.77 0.172 0.180 0.188 A1 1.22 1.27 1.42 0.048 0.050 0.056 A2 2.49 2.89 2.89 0.098 0.114 0.114 A3 0.00 0.13 0.25 0.000 0.005 0.010 b 0.70 0.81 0.96 0.028 0.032 0.034 b1 1.17 1.27 1.47 0.046 0.050 0.058 c 0.30 0.38 0.53 0.012 0.015 0.021 D1 8.50 8.70 8.90 0.335 0.343 0.350 D4 6.60 — — 0.260 — — E 9.86 10.16 10.36 0.389 0.400 0.408 E5 7.06 — — 0.278 — — e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.07 1.27 1.47 0.042 0.050 0.058 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.40 1.55 1.70 0.055 0.061 0.067 L4 θ 0.25 BSC 0° 5° 0.010 BSC 9° 0° 0.197° 0.354° TO-263 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.1,Sep-2019 Lonten LSE60R380HT ABYWW99 Part Number “99” Manufacturing Code 10 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Mechanical Dimensions for TO-262 TO-262 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.1,Sep-2019 Lonten LSF60R380HT ABYWW99 Part Number “99” Manufacturing Code 11 www.lonten.cc LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HT LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.1,Sep-2019 12 www.lonten.cc