PTD3006

PTD3006 30V/80A N-Channel Advanced Power MOSFET Features  Low On-Resistance  Fast Switching  100% Avalanche Tested  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant Description D PTD3006 designed by the trench process techniques to achieve extremely low on-resistance. Additional features of this design can operate at high junction temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. S G TO-252 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified. Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(BR)DSS Drain-Source Breakdown Voltage 30 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC =25°C 80 A Mounted on Large Heat Sink IDM Pulse Drain Current Tested (Sillicon Limit) TC =25°C 320 A ID Continuous Drain current@VGS=10V (See Fig2) TC =25°C 80 A PD Maximum Power Dissipation TC =25°C 58 W R JC Thermal Resistance-Junction to Case 1.98 °C/W 225 mJ Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ② - 1- 2015-3-26 PTD3006 30V/80A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=24V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=24V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.6 2.5 V RDS(ON) Drain-Source On-State Resistance① VGS=10V, ID=40A -- 4.5 6.0 mΩ RDS(ON) Drain-Source On-State Resistance① VGS=4.5V, ID=20A -- 5.5 7.5 mΩ -- 1350 -- pF -- 190 -- pF -- 115 -- pF -- 38 -- nC V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=15V,VGS=0V, f=1MHz VGS=10V VGS=4.5V Qgs Gate-Source Charge Qgd Gate-Drain Charge 15 VDS=15V,ID=18A, VGS=10V nC -- 8 -- nC -- 7 -- nC -- 13 -- nS Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=10A, -- 12 -- nS t d(off) Turn-Off Delay Time RG=4.7Ω, -- 19 -- nS tf Turn-Off Fall Time -- 12 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) ISD Source-drain current(Body Diode) Tc=25℃ -- -- 80 A VSD Forward on voltage IS=40A,VGS=0V -- -- 1.2 V trr Reverse Recovery Time Tj=25℃,Isd=40A, -- 22 -- nS Qrr Reverse Recovery Charge 11 -- nC VGS=0V di/dt=100A/μs Note: ① Pulse width ≤ 300μs; duty cycle≤ 2%. ② Limited by Tjmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 30A, VGS =10V. Part not recommended for use above this value ③ Repetitive rating; pulse width limited by max. junction temperature. - 2- 2015-3-26 PTD3006 30V/80A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) ID, Drain-Source Current (A) Typical Characteristics VDS, Drain -Source Voltage (V) Tc - Case Temperature (°C) Fig2. Maximum Drain Current Vs.Case Temperature Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature On Resistance (mΩ) ID - Drain Current (A) Fig3. Typical Transfer Characteristics VGS, Gate -Source Voltage (V) VDS, Drain -Source Voltage (V) Fig5. On Resistance Vs. Gate -Source Voltage Fig6. Maximum Safe Operating Area - 3- 2015-3-26 PTD3006 30V/80A N-Channel Advanced Power MOSFET VGS, Gate-Source Voltage (V) ISD, Reverse Drain Current (A) Typical Characteristics VSD, Source-Drain Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage C, Capacitance (pF) VGS(TH), Gate -Source Voltage (V) Fig7. Typical Source-Drain Diode Forward Voltage Tj - Junction Temperature (°C) VDS , Drain-Source Voltage (V) Fig9. Threshold Voltage Vs. Temperature Fig10. Typical Capacitance Vs.Drain-Source Voltage Fig11. Unclamped Inductive Test Circuit and Fig12. Switching Time Test Circuit and waveforms waveforms - 4- 2015-3-26