TX40N06B

TX40N06B N-Channel 60-V (D-S) MOSFET FE ATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) 60 a, e ID (A) 0.025 at VGS = 10 V 35 0.030 at V GS = 4.5 V 32 Qg (Typ) 81 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICAT D IONS • OR-ing • Server • DC/DC TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C 32 ID 35 .8b, c Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C IAS 39 EAS 94.8 10 IS TC = 70 °C TA = 25 °C THERMAL A 250a 175 PD W 3.75b, c TA = 70 °C 2.63b, c TJ, Tstg Operating Junction and Storage Temperature Range mJ a, e 3.13b, c TC = 25 °C Maximum Power Dissipation A 33 b, c 200 IDM Avalanche Current Pulse V 35 TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol b, d t 10 sec Steady State Typ. Max. RthJA 32 40 RthJC 0.5 0.6 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. www.xdssemi.com 1 TX40N06B S PECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 35 mV/°C - 7.5 1.5 2.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS RDS(on) gfs 5 V, VGS = 10 V 90 µA A VGS = 10 V, ID = 38.8 A 0.025 VGS = 4.5 V, ID = 37 A 0.0 30 VDS = 15 V, ID = 38.8 A 160 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6201 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 970 VDS = 15 V, VGS = 10 V, ID = 38.8 A 171 257 81.5 123 VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 34 f = 1 MHz 1.4 2.1 18 27 VDD = 15 V, RL = 0.625 24 A, VGEN = 10 V, Rg = 1 11 17 70 105 tr ID tf 10 15 td(on) 55 83 180 270 55 83 12 18 tr td(off) nC 29 td(on) td(off) 1725 ID VDD = 15 V, RL = 0.67 22.5 A, VGEN = 4.5 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 120 120 IS = 22 A 0.8 1.2 A V Body Diode Reverse Recovery Time trr 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 27 25 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. www.xdssemi.com 2 TX40N06B L C HAR AC TERI STIC S (25 °C, unless otherwise noted) I I TYPICA e - e - 90 Cu r rn Ai ) a( r t Dn Cu r rn Ai ) a( r t Dn VGS = 10 V thru 4 V 75 60 45 3.0 2.4 1.8 1.2 0.6 VGS = 2 V e 300 - n ceO(Ω) n a –t s i s TC = 125 °C 2 3 4 0.0030 0.0050 0.0040 VGS = 4.5 V VGS = 10 V TC = - 55 °C 200 1 Transfer Characteristics 0.0060 R DS(on) cn na r T TC = 25 °C 400 TC = - 55 °C 0 VGS - Gate-to-Source Voltage (V) 600 500 0.0 2.5 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics du na to c(Sc) es TC = 125 °C VGS = 3 V R 0 0.0 - G 15 100 0.0020 0.0010 - C fs TC = 25 °C D D 30 30 40 50 60 Transconductance 80 90 Ciss 000 Coss 1000 0 0 15 30 45 60 ID - Drain Current (A) 75 90 10 ID = 38.8 A VDS = 15 V 8 VDS = 24 V 6 4 2000 V GS cF) np a( t i c e 000 6000 0.000 RDS(on) vs. Drain Current a ID - Drain Current (A) 70 - 20 ou S Vo-e oc t(rV-e) e g t aa t G l 10 a 0 p C 0 Crss 0 6 12 18 24 30 2 0 0 VDS - Drain-to-Source Voltage (V) Capacitance 30 150 90 120 60 Qg - Total Gate Charge (nC) 180 Gate Charge www.xdssemi.com 3 TX40N06B TY PI CAL CH ou S Cu -ne AeIc) (rr r t 0.6 10 1 T J = 150 °C T J = 25 °C 0.1 S istance D 0.8 0.4 0.01 R n) o ( 100 VGS = 10 V, ID= 38.8 A VGS = 4.5 V, ID = 27 A 1.0 S (N s e R - n O )- 1.2 (25 °C, unless otherwise noted) ARA CTERISTICS 0.2 - 50 - 25 0 25 50 75 100 125 150 0.001 175 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Forward Diode Voltage vs. Temperature 2.8 0.005 n ID = 38.8 A 0.004 aV ) c h) tV ( aS i r(Ve TA = 125 °C 0.003 TA = 25 °C 2.4 ID = 250 µA 2.0 1.6 G 0.002 1.2 0.001 0.000 0 2 4 6 8 0.8 - 50 - 25 10 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 125 150 175 1000 *Limited by rDS (on) I D - Drain Current (A) RDS(on) - s i cse (Ω) ne aR t - n O On-Resistance vs. Junction Temperature 100 10 10 ms 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.xdssemi.com 4 TX40N06B r e L C HAR AC TERI STIC S (25 °C, unless otherwise noted) 250 200 150 Package Limited 100 50 0 300 250 200 a p (W i n)s os i i t D 300 150 ow P ID Cu e nr Air) a( r t Dn - TYPICA 100 50 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case www.xdssemi.com 5 TX40N06B TO-252AA CASE OUTLINE E A MILLIMETERS C2 INCHES DIM. MIN. MAX. MIN. A 2.18 2.38 MAX. A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 0.045 0.086 0.094 b2 0.76 1.14 0.030 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 No te • Dimen sion L3 is for reference only. www.xdssemi.com 6