SE30100B

Jan 2015 SE30100B N-Channel Enhancement-Mode MOSFET Revision: A Features General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.  High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation For a single MOSFET   VDS = 30V RDS(ON) = 3mΩ @ VGS=10V Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed ID 100 400 A Avalanche Energy L=0.1mH EAS 350 mJ Total Power Dissipation @TA=25℃ PD 110 W TJ -55 to 175 ℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE30100B Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=30V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A gFS Forward Transconductance VDS=10V, ID=20A VSD Diode Forward Voltage IS=30A, VGS=0V IS 30 1 V 1 μA 100 nA 1.6 3 V 3.0 4.0 mΩ 50 S Max. Body-Diode Continuous Current 1.2 V 100 A DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 3300 pF 356 pF 308 pF 70 nC 8.8 nC 16.3 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=15V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=4.5V, VDS=15V, 11 ns td(off) Turn-Off Delay Time RGEN=1.8Ω 25 ns td(r) Turn-On Rise Time 160 ns td(f) Turn-Off Fall Time 60 ns ID=30A Thermal Resistance Symbol RθJA Parameter Junction to Ambient ShangHai Sino-IC Microelectronic Co., Ltd. Min Typ Units 75 ℃/W 2. SE30100B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE30100B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE30100B Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.