50N06G

50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)MAX=17.5mΩ@VGS=10V/25A RDS(ON)MAX=20mΩ@VGS=4.5V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB ITO-220AB 50N06 50N06F TO-263 TO-252 50N06B TO-262 50N06H TO-251 50N06G 50N06D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 50N06(F,B,H,G,D) Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 50 Pulsed Drain Current(Note1) IDM 200 Single Pulse Avalanche Energy (Note 2) EAS 150 mJ Avalanche Current(Note1) IAR 50 A Repetitive Avalanche Energy (Note1) EAR 12 mJ Reverse Diode dV/dt (Note 3) dv/dt 7.0 V/ns TJ,TSTG -55to+150 ℃ TL 260 ℃ 10 lbf·in 1.1 N·m Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds Mounting Torque Thermal 6-32 or M3 screw UNIT V A Characteristics Parameter Symbol ITO-220 TO-220 Thermal resistance , Channel to Case Rth(ch-c) 3.0 2.0 2.0 2.7 ℃/W PD 65 150 150 100 W Maximum Power Dissipation TC=25℃ 1 TO-262/263 TO-251/252 Units Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Breakdown Temperature Coefficient Symbol Test Conditions BVDSS VGS=0V,ID=250uA ΔBVDSS Reference to 25℃， Mix Typ Max Units 60 － － V － 0.06 － V/℃ /ΔTJ ID=250uA Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V － － 1 uA Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V － － 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V － － -100 nA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=10V,ID=250uA 1.0 － 3.0 V RDS(on) VGS=10V,ID=25A － － 17.5 mΩ RDS(on) VGS=4.5V,ID=25A － － 20 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, － 1250 － pF Output Capacitance Coss f=1.0MHZ － 445 － pF Reverse Transfer Capacitance Crss － 90 － pF － 20 － ns － 380 － ns td(off) － 80 － ns Turn-Off Fall Time tf － 145 － ns Total Gate Charge Qg VDS=48V,ID=50A, － 24.5 － nC Gate-Source Charge Qgs VGS=5V, (Note4,5) － 6 － nC Gate-Drain Charge Qgd － 14.5 － nC IS － － 50 A Pulsed Diode Forward Current ISM － － 200 A Diode Forward Voltage VSD IS=50A,VGS=0V － － 1.5 V Reverse Recovery Time trr VGS=0V,IS=50A, － 65 － ns Reverse Recovery Charge Qrr dIF/dt=100A/us, － 125 － nC Drain-Source On-State Resistance Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time VDD=30V,ID=50A, RG=25Ω tr Turn-Off Delay Time (Note4,5) Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=10V,L=0.1mH,Rg=25Ω,IAS=50A , TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature. 2 (Note4) TEST CIRCUIT AND WAVEFORM 3 4 RATINGAND CHARACTERISTIC CURVES 12 15 7V 10 6V 5 5V 0 0 5 10 15 20 25 V D S ,D rain-to -S ou rce V o ltage(V ) V 4 2 0 0 4 8 12 16 20 Q g ,T o tal G ate C harge(nC ) 22 10000 10 C iss 1000 T J =25℃ Capacitance(pF) T J =150℃ 1 C o ss 100 V G S = 0 V ,f = 1 M H z C iss = C g s C g d , C d s S h o rted C rss = C g d C o ss = C d s + C g d C rss 10 V G S =0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V D S ,S o urce-D rain V oltage(V ) 1 1.4 0 140 12 120 2.5 RDS(on),Drain-to-Source On Resistance (Normalized) ISD , Reverse Drain Current(A) 6 30 100 VDS , Drain-to-Source Brakdown Voltage(V) 8 30 T J =25℃ 10 S= 20 8V D 25 V 1 5V T O P 1 4V 1 3V 1 2V 1 1V 1 0V 9V VGS,Gate-to-Source Voltage(V) ID,Drain-to-Source Current(A) 30 100 80 60 40 20 5 60 I D =15 A 2.0 1.5 1.0 V G S =10 V 0.5 0 -60 -40 -20 0 25 50 75 100 125 150 175 T J , Ju nction T em perature( ℃ ) 10 20 30 40 50 V D S ,D rain-to -S ou rce V o ltage(V ) -75 -50 -25 0 25 50 75 100 125 150 175 T J , Ju nction T em perature( ℃ ) RDS(ON) , Rrain-Source On-Resistance (mΩ) ID, Drain Current(A) 100 20 Operation in this Area Limited by R DS(on) I DM =Limited 10 100 μ s 1 Limited by R DS(on) 1ms 0.1 T C =25 ℃ T J=150 ℃ BVDSS Limited Single Pulse 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage(V) V GS =10 V 1 0.1 100 1 10 I D , Drain Current(V) 100 5 VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) 10 10ms 150 120 90 60 30 0 Common Source Tc=25 ℃ Pulse Test 4 3 2 1 0 -80 25 50 75 100 125 150 T CH , Channel Tem perature(Initial) ( ℃ ) Com m on Source V D S =10V I D =250uA Pulse Test -40 0 40 80 120 T C , Case Tem perature( ℃ ) 140 1 Nomalized Effective Transient Thermal Impedance D uty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 Pulse Tim e(s) 6 1 10 PACKAGE OUTLINE DIMENSIONS TO-220AB TO-220AB Min Max A .573(14.55) .603(15.32) B ―― .412(10.5) C .103(2.62) .113(2.87) D .140(3.56) .160(4.06) E .510(13.0) .560(14.3) F .027(0.68) .037(0.94) G .148(3.74) .154(3.91) H .230(5.84) .270(6.86) I .175(4.44) .185(4.86) J .100(2.54) .110(2.79) K .014(0.35) .025(0.64) L .045(1.14) .055(1.40) P .095(2.41) .105(2.67) Dim L I C H G A PIN 1 2 3 D E J F ITO-220AB B ITO-220AB Min Max A .571(14.5) .610(15.5) B .383(9.72) .406(10.3) C .110(2.80) .126(3.20) D .133(3.38) .162(4.10) E .512(13.0) .551(14.0) F .028(0.70) .035(0.90) G .114(2.90) .138(3.50) H .268(6.80) .291(7.40) I .162(4.10) .185(4.70) J .102(2.60) .110(2.80) K .018(0.45) .026(0.65) L .097(2.46) .113(2.86) P .890(2.25) .113(2.85) L G Dim I C H A PIN 1 2 D 3 E J F P K 7 TO-263 TO-263 B C I 2 H A D G J M E K P Min Max A .323(8.20) .348(8.85) B .394(10.0) .413(10.5) C .394(10.0) .402(10.2) D .077(1.95) .100(2.55) E .204(5.17) .227(5.77) F .027(0.68) .037(0.94) G 3 PIN 1 F Dim L -- .067(1.70) H .046(1.17) .053(1.34) I .175(4.44) .191(4.86) J .100(2.54) .110(2.79) K .014(0.35) .025(0.64) L .047(1.20) .055(1.40) M .000(0.00) .010(0.25) P .095(2.41) .105(2.67) Dimensions in inches and (millimeters) TO-262 B L C I H PIN 1 2 D TO-262 Dim Min Max A .323(8.20) .348(8.85) B .394(10.0) .413(10.5) C .394(10.0) .402(10.2) D .140(3.56) .160(4.06) E .510(13.0) .560(14.3) F .027(0.68) .037(0.94) H .046(1.17) .053(1.34) I .175(4.44) .185(4.86) J .100(2.54) .110(2.79) K .014(0.35) .025(0.64) L .045(1.14) .055(1.40) P .095(2.41) .105(2.67) A 3 E J F P K Dimensions in inches and (millimeters) 8 TO-252 B C I 2 N H A 3 PIN 1 D J E M G F TO-252 Dim Min Max A .230(5.85) .246(6.25) B .250(6.35) .264(6.75) C .207(5.27) .218(5.54) D .037(0.93) .045(1.14) E .106(2.70) .138(3.50) F .028(0.72) .033(0.84) G .024(0.60) .041(1.05) H .028(0.72) .043(1.10) I .085(2.15) .096(2.45) J .037(0.95) .047(1.20) K .018(0.45) .026(0.65) L .018(0.45) .024(0.60) P .081(2.05) .094(2.40) M .000(0.00) .006(0.15) N -.008(0.20) a 0° 10° L K a P Dimensions in inches and (millimeters) TO-251 L B C N A I H PIN 1 2 Dim B C D A E F 3 D H J I E J F K P L K N P TO-251 Min Max .230(5.85) .246(6.25) .250(6.35) .266(6.75) .207(5.27) .218(5.54) .037(0.93) .045(1.14) .173(4.40) .205(5.20) .028(0.72) .033(0.84) .028(0.70) .043(1.10) .085(2.15) .096(2.45) .037(0.95) .047(1.20) .018(0.45) .026(0.65) .018(0.45) .024(0.60) -.008(0.20) .081(2.05) .094(2.40) Dimensions in inches and (millimeters) 9