SM1A33PSUC-TRG

SM1A33PSU ® P-Channel Enhancement Mode MOSFET Features • Pin Description -100V/-38A, Drain 4 RDS(ON)= 39mΩ(max.) @ VGS=-10V RDS(ON)= 49mΩ(max.) @ VGS=-4.5V • • • 2 100% UIS+Rg Tested 1 Gate Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D Applications • 3 Source G Power Management for Industrial DC / DC Converters. S P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM1A33PS Assembly Material Handling Code Temperature Range Package Code SM1A33PS U : XXXXX - Lot Code SM1A33PS XXXXX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 1 www.sinopowersemi.com SM1A33PSU ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 150 °C -55 to 150 °C -19 A A TJ TSTG IS IAS Diode Continuous Forward Current a E AS a IDP b Avalanche Current, Single pulse L=0.5mH -27 Avalanche Energy, Single pulse L=0.5mH 182 Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC=25°C -152 TC=25°C -38 TC=100°C -24 TC=25°C 113 TC=100°C 45 Thermal Resistance-Junction to Case ID Continuous Drain Current PD Maximum Power Dissipation RθJA d Note Note Note Note Storage Temperature Range Thermal Resistance-Junction to Ambient V mJ c A W °C/W 1.1 TA=25°C -5.2 TA=70°C -4.1 TA=25°C 2.1 TA=70°C 1.3 Steady State o A W °C/W 60 o a: UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). b: Pulse width limited by max. junction temperature. c: Wire limited. d: RθJA steady state t=999s. RθJA is measured with the device mounted on 1in2, FR-4 board with 2oz. Copper. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 2 www.sinopowersemi.com SM1A33PSU ® Electrical Characteristics Symbol (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit -100 - - V - - 1 - - -30 Static Characteristics BVDS S Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) I GSS VGS=0V, I DS=-250µA VDS=-80V, V GS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -2 -3 V Gate Leakage Current VGS=±25V, V DS=0V - - ±100 nA VGS=-10V, IDS=-20A - 31 39 mΩ VGS=-4.5V, IDS=-10A - 36 49 mΩ ISD=-1A, V GS=0V - -0.7 -1 V - 60 - ns - 95 - nC - 3.4 6.8 Ω - 2467 3207 - 268 - - 126 - - 15 27 - 8 14 - 54 97 - 32 58 - 54 76 - 10 - - 13 - RDS(ON) e Drain-Source On-state Resistance Diode Characteristics VSD e Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics f RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS=-30V, Frequency=1.0MHz VDD=-30V, RL =30Ω, IDS=-1A, V GEN =-10V, RG =6Ω Turn-off Fall Time Gate Charge Characteristics Qg ISD=-20A, dlSD /dt=100A/µs pF ns f Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=-50V, V GS=-10V, IDS=-20A nC Note e: Pulse test; pulse width≤300µs, duty cycle≤2%. Note f: Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 3 www.sinopowersemi.com SM1A33PSU ® Typical Operating Characteristics Power Dissipation Drain Current 120 42 36 -ID - Drain Current (A) Ptot - Power (W) 100 80 60 40 20 30 24 18 12 6 o o 0 TC=25 C 0 20 0 40 60 80 100 120 140 160 TC=25 C,VG=-10V 0 20 Tj - Junction Temperature (°C) 80 100 120 140 160 Thermal Transient Impedance 500 Rd L n) s(o Normalized Transient Thermal Resistance 2 100 -ID - Drain Current (A) 60 Tj - Junction Temperature (°C) Safe Operation Area it im 100µs 10 1ms 1 10ms DC o 0.1 40 TC=25 C 1 10 100 300 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 RθJC :1.1 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 1 4 www.sinopowersemi.com SM1A33PSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 60 100 RDS(ON) - On - Resistance (mΩ) VGS=-4.5,-5,-6,-7,-8,-9,-10V -ID - Drain Current (A) 80 -4V 60 40 -3.5V 20 50 VGS=-4.5V 40 VGS=-10V 30 20 3V 0 10 0 2 4 6 8 0 10 20 30 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Voltage (V) RDS(ON) - On - Resistance (mΩ) 150 120 90 60 30 3 4 5 6 7 8 9 -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 60 IDS=-250µA IDS=-20A 2 50 -VDS - Drain - Source Voltage (V) 180 0 40 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM1A33PSU ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 100 2.5 VGS = -10V 2.0 -IS - Source Current (A) Normalized On Resistance IDS = -20A 1.5 1.0 o Tj=150 C 10 o Tj=25 C 1 0.5 o RON@Tj=25 C: 31mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 1.0 1.2 Gate Charge VDS= -50V 9 -VGS - Gate-Source Voltage (V) 3000 Ciss 2500 2000 1500 1000 Coss Crss 16 IDS= -20A 8 7 6 5 4 3 2 1 0 8 1.4 10 3500 C - Capacitance (pF) 0.8 Capacitance Frequency=1MHz 0 0.6 -VSD - Source - Drain Voltage (V) 4000 0 0.4 Tj - Junction Temperature (°C) 4500 500 0.2 24 32 40 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 0 9 18 27 36 45 54 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM1A33PSU ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01Ω tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 7 www.sinopowersemi.com SM1A33PSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 8 www.sinopowersemi.com SM1A33PSU ® Package Information E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-2 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MAX. MIN. MAX. 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 0.215 MIN. b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 9 www.sinopowersemi.com SM1A33PSU ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. TO-252-2 P0 4.0±0.10 P1 8.0±0.10 T1 C d 16.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P2 2.0±0.05 D0 D1 1.5+0.10 1.5 MIN. -0.00 D W E1 F 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05 T A0 B0 K0 0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 10 www.sinopowersemi.com SM1A33PSU ® Taping Direction Information TO-252-2 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - May, 2015 11 www.sinopowersemi.com SM1A33PSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness