VBZE50P03

VBZE50P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) a • Compliant to RoHS Directive 2002/95/EC Available 0.011 at VGS = - 10 V -60 RoHS* 0.013 at VGS = - 4.5 V -55 COMPLIANT S TO-252 G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)c Operating Junction and Storage Temperature Range Symbol Limit Unit VGS ± 20 V ID - 60 a - 45 IDM - 240 IAR - 50 EAR 180 PD 127d 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)c Free Air (TO-220AB) Junction-to-Case RthJA RthJC 40 62.5 °C/W 0.8 Notes: a. Package limited. b. Duty cycle  1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. 服务热线：400-655-8788 1 VBZE50P03 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. VDS VGS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA -1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) VDS = -5 V, VGS = - 10 V -3 ± 100 - 120 0.011 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.015 0.019 VGS = - 4.5 V, ID = - 20 A 0.013 VDS = - 15 V, ID = - 75 A nA µA A VGS = - 10 V, ID = - 30 A VGS = - 10 V, ID = - 30 A, TJ = 175 °C gfs V  20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 3300 VGS = 0 V, VDS = - 25 V, f = 1 MHz 1565 pF 715 160 VDS = - 15 V, VGS = - 10 V, ID = - 75 A 240 32 nC Gate-Drain Charge Qgd 30 Turn-On Delay Timec td(on) 25 40 225 360 150 240 210 340 Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Continuous Current tr td(off) VDD = - 15 V, RL = 0.2  ID  - 75 A, VGEN = - 10 V, Rg = 2.5  tf Characteristicsb (TC = 25 °C) IS - 60 Pulsed Current ISM - 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge ns IF = - 75 A, VGS = 0 V trr IRM(REC) Qrr IF = - 75 A, dI/dt = 100 A/µs A - 1.2 - 1.5 V 55 100 ns 2.5 5 A 0.07 0.25 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBZE50P03 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 250 TC = - 55 °C VGS = 10 V thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 5V 150 100 4V 25 °C 125 °C 120 80 40 50 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.035 150 TC = - 55 °C RDS(on) - On-Resistance () g fs - Transconductance (S) 0.030 120 25 °C 125 °C 90 60 30 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0 0 20 40 60 80 0 100 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 10 000 VGS - Gate-to-Source Voltage (V) 12 000 C - Capacitance (pF) 0.025 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VDS = 15 V ID = 75 A 16 12 8 4 0 6 12 18 24 30 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 250 300 服务热线：400-655-8788 3 VBZE50P03 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 100 VGS = 10 V ID = 30 A TJ = 150 °C I S - Source Current (A) 1.2 (Normalized) RDS(on) - On-Resistance 1.5 0.9 0.6 10 TJ = 25 °C 0.3 0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 45 ID = 250 µA IAV (A) at TA = 25 °C 40 V DS (V) I Dav (a) 100 10 IAV (A) at TA = 150 °C 1 30 0.1 0.00001 35 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 1 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 VBZE50P03 www.VBsemi.com THERMAL RATINGS 1000 90 75 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 Limited by RDS(on)* 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 15 0 0 25 50 75 100 125 150 175 0.1 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 1 ms 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBZE50P03 www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 6 VBZE50P03 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 VBZE50P03 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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