JST100N30T2

JST100N30T 2 30V,100A N-channel MOSFET Features      Application 30V,100A RDS(ON)=3.1mΩ (Typ.) @ VGS =10V RDS(ON)=4.5mΩ (Typ.) @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge  Load Switch  PWM Application Package JST100N30T2 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 100 A TC = 100℃ 65 A 400 A 180 mJ 88 W 1.7 ℃/W -55 to +175 ℃ ID IDM Continuous Drain Current Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG Version:J note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range 1／5 JST100N30T 2 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.6 2.5 V On Characteristics VGS(th) RDS(on) gFS Static Drain-Source on-Resistance VGS =10V, ID =24A - 3.1 4 note3 VGS =4.5V, ID =12A - 4.5 6 Forward Transconductance VDS =10V, ID =10A - 15.5 - S - 2200 - pF - 280 - pF - 177 - pF - 42 - nC - 4 - nC - 13 - nC - 12.6 - ns - 19.5 - ns - 42.8 - ns - 13.2 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =25V, VGS =0V, f = 1.0MHz VDS =15V, ID =24A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDD=15V, ID=15A, RGEN=3.3Ω, VGS =10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 19 - ns - 11 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS = 0V, IS=30A IF=30A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=25V,VG=10V, RG=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Version:J 2／5 JST100N30T 2 Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms Version:J 3／5 JST100N30T 2 Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) Version:J 4／5 JST100N30T 2 Package Mechanical Data E Dimensions A B2 Ref. C2 H D L V1 C B DETAIL A V1 V2 A2 V1 E1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 5.30REF 0.209REF 0.268 E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.182 0.176 7° V1 L2 Inches Max. A2 D1 G D1 Millimeters Min. V2 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D0 P0 P2 E t1 A A D1 B0 F W Dimensions T K0 P1 A0 B B B 5° 20 Φ 32 9 A A Φ13 Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 OUTLINE REEL (PCS) PER CARTON (PCS) TAPE & REEL TAPING 2,500 25,000 13inch Version:J 5／5