SE6020DB

SE6020DB N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 60V RDS(ON) = 24mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ID 20 A 60 PD 45 W TJ -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 3.3 ℃/W 1. SE6020DB Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=60V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A Forward Transconductance VDS=5V, ID=5A gFS 60 V 1.2 - 24 1 μA 100 nA 2.5 V 30 mΩ 11 S DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, f=1MHz 500 pF 60 pF 25 pF 47 nC 6 nC 14 nC 5 ns 16.1 ns SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=30V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=30V, td(off) Turn-Off Delay Time RGEN=3Ω, ID=2A td(r) Turn-On Rise Time 2.6 ns td(f) Turn-Off Fall Time 2.3 ns ID=4.5A Source-Drain Ratings and Characteristics IS Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=20A trr Reverse Recovery Time TJ=25℃, IF=20A 35 ns Qrr Reverse Recovery Charge Di/dt=100A/μs 53 nC ShangHai Sino-IC Microelectronic Co., Ltd. 20 A 1.2 V 2. SE6020DB Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE6020DB Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE6020DB Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE6020DB Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.