SM1A23NSUC-TRG

SM1A23NSU ® N-Channel Enhancement Mode MOSFET Features · Pin Description 100V/15A, D RDS(ON)= 100mW(max.) @ VGS= 10V RDS(ON)= 110mW(max.) @ VGS= 4.5V · · · · S 100% UIS + Rg Tested G ESD Protection Top View of TO-252-2 Reliable and Rugged Lead Free and Green Devices Available D (2) (RoHS Compliant) G (1) Applications · Power Management in DC/DC Converter. S (3) N-Channel MOSFET Ordering and Marking Information SM1A23NS Assembly Material Handling Code Temperature Range Package Code SM1A23NS U : SM1A23N XXXXX Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 1 www.sinopowersemi.com SM1A23NSU ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ T STG IS Diode Continuous Forward Current ID Continuous Drain Current a IDM PD Pulsed Drain Current Maximum Power Dissipation R qJC Continuous Drain Current PD Maximum Power Dissipation R qJA c 15 TC=25°C 15 TC=100°C 9 TC=25°C 60 TC=25°C 44 TC=100°C 17 2.8 TA=25°C 3.4 TA=70°C 2.7 TA=25°C 2.5 TA=70°C 1.6 Thermal Resistance-Junction to Ambient b Avalanche Current, Single pulse b Avalanche Energy, Single pulse EAS TC=25°C Thermal Resistance-Junction to Case ID IAS -55 to 150 Storage Temperature Range V °C A W °C/W A W 50 °C/W L=0.5mH 7 A L=0.5mH 12 mJ Note a：Pulse width limited by max. junction temperature. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). 2 Note c：Surface Mounted on 1in pad area. Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 2 www.sinopowersemi.com SM1A23NSU ® Electrical Characteristics Symbol (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - - 1 - - 30 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) d VGS=0V, IDS=250mA VDS=80V, VGS=0V TJ=85°C mA Gate Threshold Voltage VDS=VGS , IDS=250mA 1 2 3 V Gate Leakage Current VGS=±20V, VDS=0V - - ±10 mA VGS=10V, IDS =8A - 80 100 VGS=4.5V, IDS=7A - 85 110 ISD=8A, VGS=0V - 0.8 1.3 V - 24 - ns - 31 - nC - 2.5 - W - 740 960 - 45 - - 24 - - 11 20 - 6 11 - 27 49 - 5 10 - 7.1 - - 15 20 - 2.8 - - 2.8 - Drain-Source On-state Resistance mW Diode Characteristics VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf ISD=8A, dlSD/dt=100A/ms VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, R L=30W, IDS=1A, VGEN=10V, RG=6W Turn-off Fall Time Gate Charge Characteristics pF ns e Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V, VGS=4.5V, IDS=8A VDS=30V, VGS=10V, IDS=8A nC Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 3 www.sinopowersemi.com SM1A23NSU ® Typical Operating Characteristics Power Dissipation Drain Current 18 50 15 ID - Drain Current (A) Ptot - Power (W) 40 30 20 10 12 9 6 3 o 0 o T C =25 C 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 100 s(o n) 10ms 10 Rd ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 300 100ms 1 1ms DC o 0.1 0.01 T C=25 C,VG=10V TC=25 C 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 2 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse o 1E-3 1E-6 RqJC :2.8 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM1A23NSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 140 20 VGS=3.5,4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) ID - Drain Current (A) 16 12 3V 8 4 0 2.5V 0 1 2 3 4 5 120 100 VGS=4.5V 80 VGS=10V 60 40 6 0 3 6 9 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 160 18 IDS=250mA IDS=8A 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 15 VDS - Drain - Source Voltage (V) 180 140 120 100 80 60 12 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM1A23NSU ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.5 60 VGS = 10V 2.0 IS - Source Current (A) Normalized On Resistance IDS = 8A 1.5 1.0 0.5 10 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 80mW 0.0 -50 -25 0 25 50 0.1 0.0 100 125 150 0.3 0.6 0.9 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1100 1000 9 900 8 800 Ciss 700 600 500 400 300 200 100 Coss 0 Crss 0 8 16 24 32 VDS= 30V IDS= 8A 7 6 5 4 3 2 1 0 40 VDS - Drain-Source Voltage (V) Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 1.5 10 Frequency=1MHz VGS - Gate-source Voltage (V) C - Capacitance (pF) 75 0 3 6 9 12 15 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM1A23NSU ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01W tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT RG 90% VGS VDD 10% VGS tp td(on) tr Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 7 td(off) tf www.sinopowersemi.com SM1A23NSU ® Disclaimer Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 8 www.sinopowersemi.com SM1A23NSU ® Classification Profile Copyright ã Sinopower Semiconductor Inc. Rev. A.3 - December, 2018 9 www.sinopowersemi.com SM1A23NSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm