AS0130KA

AS0130KA N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 100V 32mΩ@10V 30A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent package for good heat dissipation Package Circuit diagram TO-252AB Marking S0130KA Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6 AS0130KA N-Channel Enhancement Mode Power MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 30 A Pulsed Drain Current IDM 70 A Power Dissipation PD 85 W Thermal Resistance,Junction-to-Case RθJC 1.8 ℃/W Single pulse avalanche energy EAS 256 mJ TJ 150 TSTG -55 ~ +150 Junction Temperature Storage Temperature ℃ ℃ o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA 2.5 V 32 mΩ Gate threshold voltage 100 V VGS(th) VDS =VGS, ID =250µA 1) RDS(on) VGS =10V, ID =10A 25 1) gFS VDS =5V, ID =10A 15 Drain-source on-resistance Forward transconductance 1.3 S 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 83.3 Total Gate Charge Qg 61.7 Gate-Source Charge Qgs Gate-Drain Charge Qgd 16.7 Turn-on delay time td(on) 7 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 2356 VDS =50V,VGS =0V,f =1MHz pF 94 VDS =50V,VGS =10V,ID =10A 8.3 nC 7 VDD=50V,VGS=10V, RL=5Ω,RGEN=3Ω nS 29 tf 7 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS =0V, IS=10A TJ = 25°C, IF =10A 1) di/dt = 100A/μs 30 A 1.2 V 32 nS 53 nC Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6 AS0130KA N-Channel Enhancement Mode Power MOSFET Test Circuit 1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6 AS0130KA N-Channel Enhancement Mode Power MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6 AS0130KA N-Channel Enhancement Mode Power MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6 AS0130KA N-Channel Enhancement Mode Power MOSFET TO-252AB Package Information Page 6 Document ID Issued Date Revised Date Revision Page. AS-3150168 2003/03/08 2012/05/16 D 6