HY1310D

HY1310D/U/V N-Channel Enhancement Mode MOSFET Features • Pin Description 100 V/ 33 A, RDS(ON)=19.5 m(typ.) @ VGS=10V RDS(ON)=20.5 m(typ.) @ VGS=4.5V • • Reliable and Rugged • Lead Free and Green Devices Available Avalanche Rated G D (RoHS Compliant) TO-252-2L S G G TO-251-3L D D S S TO-251-3S Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET Package Code D HY1310 U HY1310 v HY1310 YYXXXJWW G YYXXXJWW G YYXXXJWW G D : TO-252-2L U : TO-251-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: Huayi lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. Huayi defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Huayi reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. www.hymexa.com 1 V1.1 HY1310D/U/V Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C 33 A 130** A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current = TC 25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C 33 = TC 25°C A 22 = TC 100°C 54 = TC 25°C W 21.7 = TC 100°C RJC Thermal Resistance-Junction to Case 2.3 °C/W RJA Thermal Resistance-Junction to Ambient 110 °C/W EAS Drain-Source Avalanche Energy 190*** L=0.5mH mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=80V Electrical Characteristics Symbol (TC = 25C Unless Otherwise Noted) Parameter Test Conditions HY1310 Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS - - VGS=0V, IDS=250A 100 VDS=V, 100 VGS=0V - - 1 - - 30 TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 1.0 2.0 3.0 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=16 A - 19.5 24 m VGS=4.5V, I DS=16 A - 20.5 26 m ISD=16 A, VGS=0V - 0.8 1.3 V - 40 - ns - 75 - nC RDS(ON) * Drain-Source On-state Resistance Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com IDS=16 A, dlSD/dt=100A/s 2 V1.1 HY1310D/U/V Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1310 Min. Typ. Max. - 1.2 - - 3900 - - 115 - - 102 - - 36 - - 15 - - 79 - - 20 - - 90 - - 10 - - 19 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=50V, RG = 3 , IDS=16A, V GS =10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=80V, VGS=10V, IDS=16 A Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com nC . 3 V1.1 HY1310D/U/V Typical Operating Characteristics Drain Current Power Dissipation 80 45 70 40 35 ID - Drain Current (A) Ptot - Power (W) 60 50 40 30 20 10 25 20 15 10 5 o 0 30 T A=25 C 0 20 o 40 60 80 0 100 120 140 160 T A=25 C,VG=10V 0 Tj - Junction Temperature (C) 20 40 60 80 100 120 140 160 Tj - Junction Temperature Safe Operation Area 100 Rd s(o n) Lim it ID - Drain Current (A) 500 10us 10 100us 1ms 10ms 1 DC O TC=25 C 0.1 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Thermal Response ( Z thJC ) °C / W 10 1 D = 0.50 0.20 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthjc + Tc 0.10 0.05 0.02 0.01 Pdm 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t1 t2 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 Maximum Effective Transient Thermal Impedance, Junction-to-Case www.hymexa.com 4 V1.1 HY1310D/U/V Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 45 50 45 RDS(ON) - On - Resistance (m) VGS=4.5,6,10V ID - Drain Current (A) 40 35 30 3.5V 25 20 2.5V 15 10 0 0.5 1 1.5 2 VGS=4.5V 25 20 VGS=10V 15 0 2.5 0 10 20 30 40 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS= 16A 50 IDS =250μA 1.4 Normalized Threshold Voltage 40 RDS(ON) - On - Resistance (mΩ) 30 VDS - Drain - Source Voltage (V) 45 35 30 25 20 15 5 35 5 5 0 40 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (C) VGS - Gate - Source Voltage (V) www.hymexa.com 1.2 5 V1.1 HY1310D/U/V Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.2 2.0 IDS = 16A 10 1.8 IS - Source Current (A) Normalized On Resistance 30 V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@T =25 C:19.5mΩ j 0.2 -50 -25 0 25 50 0.1 0.0 100 125 150 0.4 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5600 8 VGS - Gate-source Voltage (V) 9 Ciss 4800 4000 3200 2400 1600 800 Coss Crss 0 8 16 24 32 VDS= 80V IDS= 16A 7 6 5 4 3 2 1 0 40 VDS - Drain-Source Voltage (V) www.hymexa.com 1.4 10 Frequency=1MHz 6400 0 0.2 Tj - Junction Temperature (C) 7200 C - Capacitance (pF) 75 0 20 40 60 80 100 QG - Gate Charge (nC) 6 V1.1 HY1310D/U/V Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS 90% DUT RG VGS VDD 10% VGS tp td(on) tr www.hymexa.com 7 td(off) tf V1.1 HY1310D/U/V Package Information TO-252-2L www.hymexa.com 8 V1.1 HY1310D/U/V TO-251-3L(IPAK) www.hymexa.com 9 V1.1 HY1310D/U/V TO-251-3S(SIPAK) www.hymexa.com 10 V1.1 HY1310D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-252-2L TO-251-3L TO-251-3S Tube 75 Reel Tube Tube 2500 75 75 Classification Profile www.hymexa.com 11 V1.1 HY1310D/U/V Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness