20N06

20N06 N-Channel Enhancement Mode Power MOSFET Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS 60V ID (at VGS = 10V) 25A RDS(ON) (at VGS = 10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 27mΩ 100% Avalanche Tested Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Device Package Marking Packaging 20N06 TO-252 20N06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 25 A IDM 80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 41 W EAS 30 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 3 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1371) 20N06 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.4 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 20 24 VGS = 4.5V, ID = 15A -- 22 27 Forward Transconductance gFS VGS = 5V, ID = 20A -- 30 -- -- 1609 -- -- 72 -- -- 66 -- -- 25 -- -- 4.5 -- -- 6.5 -- -- 7 -- -- 20 -- -- 16 -- -- 23 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 10A, VGS = 10V VDD = 30V, ID = 10A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 25 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 49 -- nC Reverse Recovery Time Trr IF = 10A, VGS = 0V di/dt=100A/us -- 29 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1371) 20N06 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1371) 20N06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 50 3.5V 40 3.3V 30 VGS=3V 20 10 0 0 1 2 3 RDS(on),On-Resistance（mΩ） 40 30 25℃ 20 0 4 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 40 35 30 VGS= 4.5V 25 20 VGS= 10V 15 10 5 0 VDS= 5V 50 10 Vgs Gate-Source Voltage（V） ID, Drain Current (A) 60 4.5V 3.7V 10V ID, Drain Current (A) 60 Figure 2. Transfer Characteristics 0 10 20 30 10 ID-Drain Current（A） VDD =30V ID = 10A 8 6 4 2 0 40 6 0 5 10 15 20 25 30 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) Capacitance(pF) 2500 2000 Ciss 1500 1000 500 0 Coss Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1371) 20N06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=20A VGS=4.5V ID=15A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 3°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1371) 20N06 TO-252 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1371)