TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
650V Super-Junction Power MOSFET
FEATURES
Very low FOM RDS(on)×Qg
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPP65R380C
TPA65R380C
TPU65R380C
TPD65R380C
TPC65R380C
TPB65R380C
Package
TO-220
TO-220F
TO-251
TO-252
TO-262
TO-263
Marking
65R380C
65R380C
65R380C
65R380C
65R380C
65R380C
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
Value
TO-220,TO-251,TO-252
TO-262,TO-263
TO-220F
Unit
VDSS
650
V
ID
11
A
IDM
33
A
VGSS
±30
V
Single Pulse Avalanche Energy
(note2)
EAS
211
mJ
Avalanche Current
(note1)
IAR
1.6
A
Repetitive Avalanche Energy
(note1)
EAR
0.32
mJ
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
PD
78
TJ, Tstg
31.3
-55~+150
W
ºC
Thermal Resistance
Value
Parameter
Symbol
Unit
TO-220,TO-251,TO-252
TO-262,TO-263
TO-220F
Thermal Resistance, Junction-to-Case
RthJC
1.6
4
Thermal Resistance, Junction-to-Ambient
RthJA
62
80
ºC/W
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Specifications TJ = 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
650
--
--
VDS = 650V, VGS = 0V, TJ = 25ºC
--
--
1
VDS = 650V, VGS = 0V, TJ = 150ºC
--
--
100
IGSS
VGS = ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.5
--
4
V
Drain-Source On-Resistance (Note3)
RDS(on)
VGS = 10V, ID = 5.5A
--
0.34
0.38
Ω
gfs
VDS = 10V, ID = 5.5A
--
7.8
--
S
--
901
--
--
50
--
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Forward Transconductance
(Note3)
V
μA
Dynamic
Input Capacitance
Ciss
VGS = 0V,
VDS = 50V,
f = 1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
--
5.5
--
Total Gate Charge
Qg
--
21
--
Gate-Source Charge
Qgs
--
4.5
--
Gate-Drain Charge
Qgd
--
7
--
Turn-on Delay Time
td(on)
--
41
--
Turn-on Rise Time
tr
--
20
--
Turn-off Delay Time
td(off)
--
123
--
--
6.4
--
--
--
9.2
--
--
29
--
0.9
1.2
V
--
280
--
ns
--
2.8
--
μC
--
17
--
A
Turn-off Fall Time
VDD = 520V, ID = 11A,
VGS = 10V
VDD = 400V, ID = 11A,
RG = 25Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Reverse Recovery Time
TJ = 25ºC, ISD = 11A, VGS = 0V
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irrm
VR = 520V, IF = IS,
diF/dt = 100A/μs
A
Notes
1.
Repetitive Rating: Pulse Width limited by maximum junction temperature
2.
IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
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Wuxi Unigroup Microelectronics Company
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
20
VDS = 10V
20V
10V
8V
7V
6V
5V
25
20
15
ID, Drain Current (A)
ID, Drain Current (A)
30
10
5
0
12
TJ = 150ºC
8
4
0
0
2
4
6
8
10
12
14
16
18
20
0
2
VDS, Drain-to-Source Voltage (V)
8
10
Figure 4. Capacitance
VGS = 10V
TJ = 25ºC
0.4
Capacitance (pF)
RDS(on), On-Resistance (Ω)
6
104
0.46
0.34
0.28
Ciss
103
102
Coss
101
Crss
0.22
VGS = 0
f = 1MHz
100
0.16
0
5
10
15
0
20
ID, Drain Current (A)
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
102
12
Is, Source Current (A)
VGS, Gate-to-Source Voltage (V)
4
VGS, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
10
VDD = 120V
8
VDD = 520V
6
4
2
TJ = 150ºC
101
TJ = 25ºC
100
10-1
10-2
10-3
0
0
5
10
15
20
0.2
25
Qg, Total Gate Charge (nC)
V3.0
TJ = 25ºC
16
0.4
0.6
0.8
1
1.2
1.4
VSD, Source-to-Drain Voltage (V)
3
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Wuxi Unigroup Microelectronics Company
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
2.5
VGS = 10V
ID = 5.5A
ID = 250µA
0.4
VGS(th), (Variance)
RDS(on), (Normalized)
3
Figure 8. Threshold Voltage vs.
Junction Temperature
2
1.5
1
0
-0.4
-0.8
0.5
0
-100
-50
0
50
100
150
-1.2
-100
200
TJ, Junction Temperature (ºC)
50
100
150
200
Figure 10. Transient Thermal Impedance
TO-220F
Figure 9. Transient Thermal Impedance
TO-220,TO-262,TO-263,TO-251,TO-252
101
100
10-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
100
10-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
10-7
10-6
10-5
10-4
10-3
10-2
10-1
10-7
Tp, Pulse Width (s)
V3.0
0
TJ, Junction Temperature (ºC)
ZthJC, Thermal Impedance (K/W)
ZthJC, Thermal Impedance (K/W)
101
-50
10-6 10-5 10-4
10-3 10-2 10-1 100
101
Tp, Pulse Width (s)
4
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
Figure A:Gate Charge Test Circuit and Waveform
Figure B:Resistive Switching Test Circuit and Waveform
Figure C:Unclamped Inductive Switching Test Circuit and Waveform
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-220
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-220F
V3.0
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-251
V3.0
8
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-252
V3.0
9
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-262
V3.0
10
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
TO-263
V3.0
11
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TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C
Wuxi Unigroup Microelectronics Company
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
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by this document or by any conduct of Wuxi Unigroup.
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such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
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described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
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include but are not limited to protective circuits and error prevention circuits for safe design, redundant
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In the event that any or all Wuxi Unigroup products (including technical data, services) described or
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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
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