TPD65R940C

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device TPP65R940C TPA65R940C TPU65R940C TPD65R940C TPC65R940C TPB65R940C Package TO-220 TO-220F TO-251 TO-252 TO-262 TO-263 Marking 65R940C 65R940C 65R940C 65R940C 65R940C 65R940C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-251, TO-252 Drain-Source Voltage (VGS = 0V) VDSS 650 V ID 4 A IDM 12 A VGSS ±30 V Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-220F Single Pulse Avalanche Energy (note2) EAS 52.8 mJ Avalanche Current (note1) IAR 0.8 A Repetitive Avalanche Energy (note1) EAR 0.09 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 28 TJ, Tstg 23 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO-251, TO-252 TO-220F Thermal Resistance, Junction-to-Case RthJC 4.4 5.5 Thermal Resistance, Junction-to-Ambient RthJA 62 80 ºC/W V3.0 1 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 1A -- 0.88 1.0 Ω gfs VDS = 10V, ID = 1A -- 3 -- S -- 350 -- -- 20 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 2.6 -- Total Gate Charge Qg -- 7 -- Gate-Source Charge Qgs -- 1.5 -- Gate-Drain Charge Qgd -- 2.5 -- Turn-on Delay Time td(on) -- 36 -- Turn-on Rise Time tr -- 27 -- Turn-off Delay Time td(off) -- 79 -- -- 29 -- -- -- 3.9 -- -- 12 -- 0.9 1.2 V -- 220 -- ns -- 0.9 -- μC -- 8 -- A Turn-off Fall Time VDD = 520V, ID = 4A, VGS = 10V VDD = 400V, ID = 4A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time TJ = 25ºC, ISD = 4A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 480V, IF = IS, diF/dt = 100A/μs A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 0.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V3.0 2 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 9 20V 10V 8V 7V 6V 5V 10 8 VDS = 10V 8 ID, Drain Current (A) ID, Drain Current (A) 12 6 4 2 7 TJ = 25ºC 6 5 TJ = 150ºC 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 0 20 0 2 VDS, Drain-to-Source Voltage (V) Capacitance (pF) RDS(on), On-Resistance (Ω) 1.3 1.2 1.1 1 0.9 103 Ciss 102 Coss 101 0.8 Crss VGS = 0V f = 1MHz 0.6 100 0 1 2 3 4 0 10 ID, Drain Current (A) 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 102 12 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 10 Figure 4. Capacitance 0.7 10 VDD = 120V 8 6 VDD = 520V 4 TJ = 150ºC 101 TJ = 25ºC 100 10-1 10-2 2 10-3 0 0 1 2 3 4 5 6 7 8 0.2 Qg, Total Gate Charge (nC) V3.0 8 104 VGS = 10V TJ = 25ºC 1.4 6 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current 1.5 4 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature 0.6 VGS = 10V ID = 2A 2.5 2 1.5 1 0.5 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 0 -100 -50 0 50 100 150 -1.2 -100 200 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-7 10-6 10-5 10-4 10-3 10-2 0 50 100 150 200 Figure 10. Transient Thermal Impedance TO-220F Figure 9. Transient Thermal Impedance TO-251,TO-252 10-1 -50 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) TJ, Junction Temperature (ºC) 10-1 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-7 10-6 10-5 10-4 Tp, Pulse Width (s) V3.0 ID = 250µA 0.4 VGS(th), (Variance)we RDS(on), (Normalized) 3 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V3.0 5 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company TO-220F V3.0 6 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company TO-251 V3.0 7 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company TO-252 V3.0 8 www.tsinghuaicwx.com TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. 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