TPD50R400C

TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device TPP50R400C TPA50R400C TPU50R400C TPD50R400C TPC50R400C TPB50R400C Package TO-220 TO-220F TO-251 TO-252 TO-262 TO-263 Marking 50R400C 50R400C 50R400C 50R400C 50R400C 50R400C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Drain-Source Voltage (VGS = 0V) (note1) Gate-Source Voltage Unit TO-220F VDSS 500 V ID 7 A IDM 21 A VGSS ±30 V Continuous Drain Current Pulsed Drain Current TO-220, TO-251, TO-252 TO-262, TO-263 Single Pulse Avalanche Energy (note2) EAS 162 mJ Avalanche Current (note1) IAR 1.4 A Repetitive Avalanche Energy (note1) EAR 0.2 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD TJ, Tstg 63 28 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO-220, TO-251, TO-252 TO-262, TO-263 TO-220F Thermal Resistance, Junction-to-Case RthJC 2.0 4.5 Thermal Resistance, Junction-to-Ambient RthJA 62 80 ºC/W V3.0 1 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 500 -- -- VDS = 500V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 500V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 3A -- 0.36 0.40 Ω gfs VDS = 10V, ID = 3A -- 5 -- S -- 587 -- -- 31 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 4 -- Total Gate Charge Qg -- 14.5 -- Gate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 5.2 -- Turn-on Delay Time td(on) -- 39 -- Turn-on Rise Time tr -- 25 -- Turn-off Delay Time td(off) -- 100 -- -- 18 -- -- -- 6.3 -- -- 19 -- 0.9 1.2 V -- 250 -- ns -- 2.1 -- μC -- 16 -- A Turn-off Fall Time VDD = 400V, ID = 7A, VGS = 10V VDD = 400V, ID = 7A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time TJ = 25ºC, ISD = 7A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 400V, IF = IS, diF/dt = 100A/μs A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V3.0 2 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 25 20V 10V 8V 7V 6V 5V 25 20 15 VDS = 10V ID, Drain Current (A) ID, Drain Current (A) 30 10 20 TJ = 25ºC 15 TJ = 150ºC 10 5 5 0 0 0 5 10 15 20 0 2 VDS, Drain-to-Source Voltage (V) 10 104 0.48 VGS = 10V TJ = 25ºC 0.46 Capacitance (pF) RDS(on), On-Resistance (Ω) 8 Figure 4. Capacitance 0.5 0.44 0.42 0.4 0.38 0.36 Ciss 103 102 Coss 101 0.34 Crss VGS = 0 f = 1MHz 0.32 100 0.3 0 4 8 12 16 0 20 ID, Drain Current (A) 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 102 10 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 6 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current 8 VDD = 120V 6 VDD = 480V 4 2 TJ = 150ºC 101 TJ = 25ºC 100 10-1 10-2 10-3 0 0 5 10 0.2 15 Qg, Total Gate Charge (nC) V3.0 4 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature 0.6 VGS = 10V ID = 3A 2.5 2 1.5 1 0.5 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 0 -100 -50 0 50 100 150 -1.2 -100 200 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-7 10-6 10-5 10-4 10-3 10-2 0 50 100 150 200 Figure 10. Transient Thermal Impedance TO-220F Figure 9. Transient Thermal Impedance TO-220,TO-251,TO-252,TO-262,TO-263 10-1 -50 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) TJ, Junction Temperature (ºC) 10-1 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-7 10-6 10-5 10-4 Tp, Pulse Width (s) V3.0 ID = 250µA 0.4 VGS(th), (Variance)we RDS(on), (Normalized) 3 Figure 8. Threshold Voltage vs. Junction Temperature 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V3.0 5 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-220 V3.0 6 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-220F V3.0 7 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-251 V3.0 8 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-252 V3.0 9 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-262 V3.0 10 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company TO-263 V3.0 11 www.tsinghuaicwx.com TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. 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