SM2F04NSUC-TRG

SM2F04NSU ® N-Channel Enhancement Mode MOSFET Features • Pin Description 250V/10A, D RDS(ON)= 300mΩ (Max.) @ VGS=10V • • S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications • G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM2F04NS Assembly Material Handling Code Temperature Range Package Code SM2F04NS U : XXXXX - Lot Code SM2F04NS XXXXX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 1 www.sinopowersemi.com SM2F04NSU ® Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 250 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM a PD R θJC Pulsed Drain Current Maximum Power Dissipation TC =25°C 4 TC =25°C 10 TC =100°C 6 TC =25°C 27 TC =25°C 73 TC =100°C 29 Thermal Resistance-Junction to Case ID Continuous Drain Current PD Maximum Power Dissipation R θJA b -55 to 150 1.7 Thermal Resistance-Junction to Ambient TA =25°C 1.8 TA =70°C 1.4 TA =25°C 2.5 TA =70°C 1.6 50 V °C A A W °C/W A W °C/W Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 2 www.sinopowersemi.com SM2F04NSU ® Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Conditions Min. Typ. Max. Unit VGS=0V, IDS=250µA 250 - - V VDS=200V, VGS =0V - - 1 - - 30 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) I GSS RDS(ON) c TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 3 4 5 V Gate Leakage Current VGS=±25V, VDS =0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=4A - 250 300 mΩ ISD =2A, V GS=0V - 0.8 1.3 V - 78 - ns - 330 - nC - 2.7 - Ω - 1180 1550 - 55 - - 16 - - 16 29 - 7 13 - 26 47 - 6 11 - 20 28 - 7 - - 4.2 - Diode Characteristics VSD c Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics d RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance t d(ON) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL =30Ω, IDS =1A, V GEN=10V, RG =6Ω Turn-off Fall Time Gate Charge Characteristics Qg ISD =4A, dl SD /dt=100A/µs pF ns d Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=125V, VGS =10V, IDS =4A nC Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note d：Gua ranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 3 www.sinopowersemi.com SM2F04NSU ® Typical Operating Characteristics Power Dissipation Drain Current 12 80 70 10 ID - Drain Current (A) Ptot - Power (W) 60 50 40 30 20 8 6 4 2 10 o o T C=25 C 0 0 20 40 60 80 0 100 120 140 160 T C=25 C,VG=10V 0 20 Tj - Junction Temperature (°C) Normalized Transient Thermal Resistance Rd s( on )L im it ID - Drain Current (A) 100µs 1 1ms 0.1 10ms DC TC=25 C 0.01 0.1 1 10 80 100 120 140 160 Thermal Transient Impedance 100 o 60 Tj - Junction Temperature Safe Operation Area 10 40 100 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 1000 VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 3 RθJC :1.7 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM2F04NSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 18 600 VGS=5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 15 12 9 6 5V 3 500 400 300 VGS=10V 200 100 4.5V 0 0 2 4 6 8 0 10 0 2 4 6 8 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 500 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 450 400 350 300 250 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 1.2 1.0 0.8 0.6 0.4 -50 -25 10 12 IDS=250µA IDS=4A 200 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM2F04NSU ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 3.0 30 VGS = 10V IDS = 4A 10 IS - Source Current (A) Normalized On Resistance 2.5 2.0 1.5 1.0 o T j=150 C o T j=25 C 1 0.5 o RON@Tj=25 C: 250mΩ 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge VDS= 125V 9 VGS - Gate-source Voltage (V) Ciss 1200 1000 800 600 400 200 8 16 IDS= 4A 8 7 6 5 4 3 2 1 Coss Crss 1.4 10 1400 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 1600 0 0.2 24 32 0 40 VDS - Drain-Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 0 4 8 12 16 20 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM2F04NSU ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 7 td(off) tf www.sinopowersemi.com SM2F04NSU ® Package Information TO-252-3 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 - 0.13 - 0.005 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 A1 b D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 e H 2.29 BSC 9.40 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.236 0.090 BSC 10.41 0.370 0.410 0.070 L 0.90 1.78 0.035 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 8 www.sinopowersemi.com SM2F04NSU ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application TO-252-3 A H 330.0± 2.00 50 MIN. P0 P1 4.0±0.10 8.0±0.10 T1 C d D W E1 F 16.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05 P2 D0 2.0±0.05 1.5+0.10 -0.00 D1 1.5 MIN. T A0 0.6+0.00 -0.40 6.80±0.20 B0 K0 10.40± 0.20 2.50±0.20 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 9 www.sinopowersemi.com SM2F04NSU ® Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 10 www.sinopowersemi.com SM2F04NSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 11 www.sinopowersemi.com SM2F04NSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm 3