TPD65R600M

TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting markets ， designed by Wuxi Unigroup Microelectronics Company. FEATURES APPLICATIONS  Very low FOM RDS(on)×Qg  Switch Mode Power Supply (SMPS)  100% avalanche tested  Uninterruptible Power Supply (UPS)   Power Factor Correction (PFC) RoHS compliant Device Marking and Package Information Device Package Marking TPD65R600M TO-252 65R600M Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.6 Ω ID 7 A Qg,typ 13 nC IDM 21 A Key Performance Parameters V4.0 1 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current TC = 25ºC Symbol Value Unit VDSS 650 V 7 TC = 100ºC Pulsed Drain Current A ID 4.2 (note1) Gate-Source Voltage IDM 21 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 142 mJ Repetitive Avalanche Energy (note2) EAR 0.21 mJ IAR 1.3 A dv/dt 50 V/ns Power Dissipation PD 63 W Continuous Body Diode Current IS 6 Avalanche Current MOSFET dv/dt ruggedness, VDS = 0...480V A Pulsed Diode Forward Current (note1) ISM 21 Reverse diode dv/dt (note3) dv/dt 15 V/ns Maximum diode commutation speed (note3) dif/dt 500 A/us TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 2.0 Thermal Resistance, Junction-to-Ambient RthJA 62 Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W V4.0 2 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3.5A -- 0.53 0.6 Ω RG f = 1.0MHz open drain -- 19 -- Ω -- 509 -- -- 23 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Gate resistance V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 1.5 -- Total Gate Charge Qg -- 13 -- Gate-Source Charge Qgs -- 2.8 -- Gate-Drain Charge Qgd -- 5.6 -- Turn-on Delay Time td(on) -- 55 -- Turn-on Rise Time tr -- 61 -- Turn-off Delay Time td(off) -- 117 -- -- 42 -- -- 0.9 1.2 V -- 321 -- ns -- 3.4 -- μC -- 21.2 -- A Turn-off Fall Time VDD = 520V, ID = 7A, VGS = 10V VDD = 400V, ID = 7A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Body Diode Voltage Reverse Recovery Time VSD TJ = 25ºC, ISD = 3.5A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 400V, IF = 7A, diF/dt = 100A/μs Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG V4.0 3 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 20 20V 10V 8V 7V 6V 5.5V 5V 4.5V 15 10 VDS = 20V ID, Drain Current (A) ID, Drain Current (A) 20 5 15 10 TJ = 25ºC TJ = 150ºC 5 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current Figure 4. Capacitance VGS = 10V TJ = 25ºC 1.4 VGS = 0 f = 1MHz Capacitance (pF) RDS(on), On-Resistance (Ω) 104 1.2 1 0.8 Ciss 103 102 Coss 101 0.6 Crss 100 0.4 0 2 4 6 8 10 12 14 16 18 0 ID, Drain Current (A) 300 400 500 600 Figure 6. Body Diode Forward Voltage 12 102 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 200 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge 10 VDD = 120V 8 6 VDD = 520V 4 TJ = 125ºC 101 TJ = 25ºC 100 2 0 10-1 0 5 10 15 0 Qg, Total Gate Charge (nC) V4.0 100 4 0.5 1 VSD, Source-to-Drain Voltage (V) 1.5 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8.Breakdown voltage vs. Junction Temperature Figure 7. On-Resistance vs. Junction Temperature 1.3 VGS = 10V ID = 3.5A 2.5 ID = 250µA VBR(DSS), (Normalized) RDS(on), (Normalized) 3 2 1.5 1 0.5 0 1.2 1.1 1 0.9 0.8 -50 0 50 100 150 -30 0 TJ, Junction Temperature (ºC) ID, Drain Current(A) ZthJC, Thermal Impedance (ºC/W) 120 150 TO-252 102 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 101 100 tp = 1us tp = 10us tp = 100us tp = 1ms tp = 10ms DC 10-1 10-2 10-4 10-3 10-2 10-1 100 101 100 101 102 103 VDS, Drain-Source Voltage(V) Tp, Pulse Width (s) V4.0 90 Figure 10. Safe operation area for 101 10-1 60 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance TO-252 10-5 30 5 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V4.0 6 www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd TO-252 Unit:mm Symbol Min. Nom Max. Symbol A 2.20 2.30 2.40 e A1 0.00 - 0.20 H 9.40 10.10 10.50 A2 0.97 1.07 1.17 L 1.38 1.50 1.75 b 0.68 0.78 0.90 L1 2.90 REF b3 5.20 5.33 5.50 L2 0.51 BSC c 0.43 0.53 0.63 L3 0.88 - 1.28 D 5.98 6.10 6.22 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° D1 V4.0 Unit:mm 5.30 REF E 6.40 6.60 6.80 E1 4.63 - - 7 Min. Nom Max. 2.286 BSC www.tsinghuaicwx.com TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd Disclaimer All product specifications and data are subject to change without notice. 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