HSU4016

HSU4016 N-Ch 40V Fast Switching MOSFETs Product Summary Description The HSU4016 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU4016 meet the RoHS and Green Product VDS 40 V RDS(ON),max 6.5 mΩ ID 75 A requirement 100% EAS guaranteed with full function reliability approved. l l l l l TO252 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 75 A Continuous Drain Current, VGS @ 10V 1 58 A 150 A 110.5 mJ 47 A 52.1 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current PD@TC=25℃ Total Power Dissipation 3 4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 2.4 ℃/W 1 HSU4016 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=15A --- --- 6.5 VGS=4.5V , ID=12A --- --- 9 1.0 --- 2.5 V --- -5.84 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 27 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 --- Ω Qg Total Gate Charge (4.5V) --- 28 --- Qgs Gate-Source Charge --- 7.85 --- Qgd Gate-Drain Charge --- 12.5 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 20.2 --- Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 11.8 --- Turn-Off Delay Time ID=1A --- 84.8 --- Fall Time --- 8.6 --- Ciss Input Capacitance --- 3354 --- Coss Output Capacitance --- 275 --- Crss Reverse Transfer Capacitance --- 204 --- Min. Typ. Max. Unit --- --- 75 A --- --- 150 A --- --- 1 V Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=47A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU4016 N-Ch 40V Fast Switching MOSFETs Typical Characteristics 12 8 ID=12A VGS=10V VGS=7V 8 7 VGS=5V RDSON (mΩ) ID Drain Current (A) 10 VGS=4.5V 6 6 VGS=3V 4 5 2 0 4 0 0.1 0.2 0.3 0.4 VDS , Drain-to-Source Voltage (V) 0.5 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 12 10 10 8 VGS Gate to Source Voltage (V) IS Source Current(A) ID=12A 8 6 TJ=150℃ 4 TJ=25℃ 2 6 4 2 0 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 0 1 Fig.3 Forward Characteristics Of Reverse 30 45 QG , Total Gate Charge (nC) 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 15 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSU4016 N-Ch 40V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz Capacitance (pF) 10us 100.00 Ciss 100us 1000 ID (A) 10.00 Coss Crss 100 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS , Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 TON D = TON/T SINGLE PULSE 0.01 0.00001 T TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 10% VGS Td(on) Tr Ton Td(off) BVDSS BVDSS-VDD VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Wave Ver 2.0 4 HSU4016 N-Ch 40V Fast Switching MOSFETs Ordering Information Part Number HSU4016 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5