IRFR4620TRPBF-VB

IRFR4620TRPBF www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 200 0.055 at VGS = 10 V 30 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V 30 ID 25 IDM 160 IS 28 A IAS 3 EAS 18 mJ 96b W PD 3a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t  10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. 服务热线：400-655-8788 1 IRFR4620TRPBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ± 100 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 ID(on) VDS =5 V, VGS = 10 V 40 VGS = 10 V, ID = 3 A Drain-Source On-State Resistanceb Forward Transconductanceb 4 RDS(on) gfs V nA µA A 0.055 VGS = 10 V, ID = 3 A, TJ = 125 °C 0.060 VGS = 10 V, ID = 3 A, TJ = 175 °C 0.070 VGS = 6 V, ID = 3 A 0.092 VDS = 15 V, ID = 3 A 35  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Timec td(on) Turn-Off Delay Timec td(off) Turn-On Delay Rise Timec 1800 VGS = 0 V, VDS = 25 V, F = 1 MHz pF 80 34 VDS = 100 V, VGS = 10 V, ID = 3 A tr Fall Timec 180 51 nC 8 12 0.5 VDD = 100 V, RL = 5.2 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω tf 2.9 15 25 50 75 30 45 60 90  ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Diode Forward Voltage 5 ISM Pulsed Current b Source-Drain Reverse Recovery Time A VSD IF = 3 A, VGS = 0 V 0.9 1.5 V trr IF = 3 A, dI/dt = 100 A/µs 180 250 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRFR4620TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 8 VGS = 10 V thru 7 V 6V 6 I D - Drain Current (A) I D - Drain Current (A) 30 20 5V 10 4 TC = 125 °C 2 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 70 6 0.20 R DS(on) - On-Resistance () TC = - 55 °C 60 g fs - Transconductance (S) 1 50 25 °C 40 125 °C 30 20 0.15 VGS = 6 V 0.10 VGS = 10 V 0.05 10 0.0 0 0 10 20 30 0 40 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2500 VGS - Gate-to-Source Voltage (V) 20 2000 C - Capacitance (pF) 10 Ciss 1500 1000 500 Crss VDS = 100 V ID = 19 A 16 12 8 4 Coss 0 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance 200 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 IRFR4620TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.3 100 VGS = 10 V ID = 5 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 0.25 0.2 0.15 0.1 TJ = 150 °C 10 TJ = 25 °C 0.05 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature ( °C) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS 10 7 100 µs ID - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 6 5 4 5 1 ms 10 ms 1 100 ms 1 s, DC TC = 25 °C Single Pulse 3 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 4 IRFR4620TRPBF www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 5 IRFR4620TRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 6 IRFR4620TRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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