FR5305-VB

FR5305 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 50 0.025 at VGS = - 4.5 V - 45 • TrenchFET® Power MOSFET • Material categorization: APPLICATIONS • Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 ID - 50 - 40 IDM - 160 IAS - 50 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS V A 125 mJ 113c PD W 2.5b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t  10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. 服务热线：400-655-8788 1 FR5305 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA - 1.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS a Forward Transconductance RDS(on) ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 ID(on) Drain-Source On-State Resistancea -3 VDS = -5 V, VGS = - 10 V - 50 nA µA A VGS = - 10 V, ID = - 17 A 0.020 VGS = - 10 V, ID = - 40 A, TJ = 125 °C 0.030 VGS = - 10 V, ID = - 40 A, TJ = 150 °C 0.035 VGS = - 4.5 V, ID = - 14 A 0.025 VDS = - 15 V, ID = - 17 A 61 gfs V  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 305 Total Gate Chargec Qg 110 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 2950 VGS = 0 V, VDS = - 25 V, f = 1 MHz VDS = - 30 V, VGS = - 10 V, ID = - 40 A pF 380 165 nC 19 28 15 23 VDD = - 30 V, RL = 0.6 Ω ID ≅ - 40 A, VGEN = - 10 V, RG = 6 70 105 175 260 Ω 175 260 tf Source-Drain Diode Ratings and Characteristics TC = 25 ns °Cb IS - 40 Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 40 A, VGS = 0 V -1 - 1.6 V trr IF = - 40 A, dI/dt = 100 A/µs 45 70 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 FR5305 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 10 25 ° C 10 - 55 °C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 3.0 3.5 4.0 70 80 0.060 R DS(on) - On-Resistance (Ω) 25 °C TC = - 55 °C 80 125 °C 60 40 20 0.050 0.040 VGS = 4.5 V 0.030 VGS = 10 V 0.020 0.000 0 0 10 20 30 40 50 0 60 10 20 VGS - Gate-to-Source Voltage (V) 30 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 4000 10 VGS - Gate-to-Source Voltage (V) 3500 3000 C - Capacitance (pF) 1.5 Transfer Characteristics 100 g fs - Transconductance (S) 1.0 VGS - Gate-to-Source Voltage (V) Ciss 2500 2000 1500 1000 Coss 500 Crss 0 0 VDS = 30 V ID = 40 A 8 6 4 2 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 50 60 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 FR5305 www.VBsemi.com TYPICAL CHARACTERISTICS 100 VGS = 10 V ID = 17 A 1.8 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.6 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 0.0 150 0.6 1.2 0.3 0.9 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 1.5 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS (25 °C, unless otherwise noted) 100 50 Limited by R DS(on)* P(t) = 0.0001 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 10 BVDSS Limited P(t) = 0.001 5 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 1 0.1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 4 FR5305 www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 5 FR5305 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 6 FR5305 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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