PA410BD

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PA410BD TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 140mΩ 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current 1 Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation 10 ID 7 IDM 30 IAS 10 EAS 5 A mJ 35 PD TC = 100 °C W 14 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RJC 3.5 Junction-to-Ambient RJA 62.5 UNITS °C / W 1 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 80V , VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 Gate Threshold Voltage Drain-Source On-State 1 Resistance Forward Transconductance RDS(ON) 1 gfs V 1.9 2.3 VGS = 4.5V, ID = 5A 103 170 VGS = 10V , ID = 5A 93 140 VDS = 10V, ID = 5A 13 nA A mΩ S E-09-4 REV 1.0 1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PA410BD TO-252 Halogen-Free & Lead-Free DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 2 2 2 2 50 8.6 VGS = 10V, Qgs VDS = 50V, ID = 5A 1.2 Qgd 3.5 td(on) 22 td(off) pF 22 tr Turn-Off Delay Time Fall Time 2 2 Turn-On Delay Time Rise Time VGS = 0V, VDS = 25V, f = 1MHz Qg Gate-Source Charge Gate-Drain Charge 330 VDS = 50V 60 ID  5A, VGS = 10V, RGEN =6Ω 30 tf nC nS 40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current Forward Voltage 1 IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 5A, VGS = 0V IF = 5A, dlF/dt = 100A / S 10 A 1.1 V 25 nS 25 nC Pulse test : Pulse Width  300 sec, Duty Cycle  2％. Independent of operating temperature. 1 2 E-09-4 REV 1.0 2 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 Halogen-Free & Lead-Free Output Characteristics Transfer Characteristics 15 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 12 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 15 VGS=3.5V 9 6 VGS=3V 3 12 9 6 -20℃ 125℃ 3 25℃ 0 0 0 1 2 3 4 0 5 VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature 2 3 4 5 Capacitance Characteristic 400 2.2 350 CISS 2.0 C , Capacitance(pF) Normalized Drain to Source ON-Resistance 1 VGS, Gate-To-Source Voltage(V) 2.4 1.8 1.6 1.4 1.2 1.0 300 250 200 150 100 VGS=10V ID=5A 0.8 50 0.6 0.4 COSS CRSS 0 -50 -25 0 25 50 75 100 125 150 0 TJ , Junction Temperature(˚C) 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics 10 Source-Drain Diode Forward Voltage 100 VDS=50V ID=5A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) PA410BD 6 4 2 0 10 25℃ 150℃ 1 0.1 0 2 4 6 8 10 0.0 Qg , Total Gate Charge(nC) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-To-Drain Voltage(V) E-09-4 REV 1.0 3 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PA410BD TO-252 Halogen-Free & Lead-Free Safe Operating Area Single Pulse Maximum Power Dissipation 100 150 Operation in This Area is Limited by RDS(ON) Single Pulse RθJC = 3.5 ˚C/W TC=25˚C 10 Power(W) ID , Drain Current(A) 120 1ms 90 60 1 10ms NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.5 ˚C/W 4.Single Pulse 100ms 30 DC 0.1 1 10 0 0.001 100 0.01 VDS, Drain-To-Source Voltage(V) 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Resistance r(t) , Normalized Effective Transient Thermal Response Curve 1 Duty cycle=0.5 Notes 0.2 0.1 0.05 0.02 1.Duty cycle, D= t1 / t2 2.RthJC = 3.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0.01 single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] E-09-4 REV 1.0 4