HSU0018A

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V and gate charge for most of the synchronous buck RDS(ON),max 22 mΩ converter applications. The HSU0018A meet the RoHS and Green ID 45 A N-ch MOSFETs, which provide excellent RDSON Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration l l l l l Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 45 A Continuous Drain Current, VGS @ 10V 1 28 A 100 A 84 mJ 41 A 90 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 1.4 ℃/W 1 HSU0018A Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.096 --- V/℃ VGS=10V , ID=30A --- 18 22 mΩ 2.5 --- 4.5 V mV/℃ VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. 2 VGS=VDS , ID =250uA --- -5.5 --- VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 27 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω Qg Total Gate Charge (10V) --- 27.6 38.6 Qgs Gate-Source Charge --- 11.4 16 Qgd Gate-Drain Charge --- 7.9 11.1 31.2 Td(on) VDS=80V , VGS=10V , ID=30A nC --- 15.6 Rise Time VDD=50V , VGS=10V , RG=3.3Ω, --- 17.2 31 Turn-Off Delay Time ID=30A --- 16.8 33.6 Fall Time --- 9.2 18.4 Ciss Input Capacitance --- 1890 2645 Coss Output Capacitance --- 268 375 Crss Reverse Transfer Capacitance --- 67 94 Min. Typ. Max. Unit --- --- 45 A Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1,5 Continuous Source Current 2,5 ISM Pulsed Source Current VSD Diode Forward Voltage trr Qrr VG=VD=0V , Force Current --- --- 100 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 34 --- nS Reverse Recovery Charge TJ=25℃ --- 47 --- nC 2 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.1mH,IAS=41A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU0018A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn Fig.6 Normalized R DSON v.s TJ Ver 2.0 3 HSU0018A Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM T 0.02 D = TON/T 0.01 0.01 0.00001 TON TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4