HSU60N02

HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSU60N02 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS 20 V RDS(ON),typ 4 mΩ ID 60 A TO252 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Battery protection Power management Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 43 A IDM Pulsed Drain Current2 200 A EAS Single Pulse Avalanche Energy3 180 mJ PD@TC=25℃ Total Power Dissipation4 60 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 RθJA RθJC www.hs-semi.cn Max. Unit --- 50 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W Thermal Resistance Junction-Case1 --- 2 ℃/W Ver 2.0 Typ. 1 HSU60N02 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=4.5V , ID=30A --- 4 5.5 VGS=2.5V , ID=15A --- 6 9 0.5 0.8 1 V --- -6.16 --- mV/℃ VDS=20V , VGS=0V , TJ=25℃ --- --- 1 VDS=20V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=20A 15 --- --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---  Qg Total Gate Charge (4.5V) --- 83 --- Qgs Gate-Source Charge --- 15 --- Qgd Gate-Drain Charge --- 32 --- Turn-On Delay Time --- 10 --- Td(on) Tr Td(off) Tf VDS=20V , VGS=10V , ID=40A Rise Time VDD=15V , VGS=10V , RG=3.3 --- 15 --- Turn-Off Delay Time ID=15A --- 31 --- nC ns Fall Time --- 15 --- Ciss Input Capacitance --- 2200 --- Coss Output Capacitance --- 400 --- Crss Reverse Transfer Capacitance --- 270 --- Min. Typ. Max. Unit --- --- 60 A --- --- 220 A VDS=20V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=30A , TJ=25℃ --- --- 1.4 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 31 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 60 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=20V,VGS=10V,L=0.1mH,IAS=45A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU60N02 N-Ch 20V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSU60N02 N-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSU60N02 N-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5 HSU60N02 N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSU60N02 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 6