HSU80N03

HSU80N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU80N03 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU80N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS 30 V RDS(ON),TYP 4.9 mΩ ID 80 A TO252 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter VDS 10s Steady State Units Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 57 A IDM Pulsed Drain Current2 320 A EAS Single Pulse Avalanche Energy3 300 mJ PD@TC=25℃ Total Power Dissipation4 115 W PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 6 2.4 W Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 50 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.8 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSU80N03 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=30A --- 4.9 6 VGS=4.5V , ID=15A --- 7.5 10 1.0 1.8 3 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A 20 --- --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4  Qg Total Gate Charge (4.5V) --- 84 --- Qgs Gate-Source Charge --- 14 --- Qgd Gate-Drain Charge --- 30 --- Turn-On Delay Time --- 20 --- Td(on) Tr Td(off) Tf VDS=30V , VGS=10V , ID=40A Rise Time VDD=30V , VGS=10V , RG=3 --- 15 --- Turn-Off Delay Time ID=40A --- 50 --- nC ns Fall Time --- 8 --- Ciss Input Capacitance --- 2290 --- Coss Output Capacitance --- 360 --- Crss Reverse Transfer Capacitance --- 280 --- Min. Typ. Max. Unit --- --- 80 A --- --- 160 A VDS=25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=40A , dI/dt=100A/µs , --- 32 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 60 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU80N03 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 180 9 ID=12A 120 VGS=10V 90 VGS=7V VGS=5V VGS=3V 8 RDSON (mΩ) ID Drain Current (A) 150 VGS=4.5V 60 6 5 30 0 3 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 ID =15A TJ=150℃ VGS , Gate to Source Voltage (V) TJ=25℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 18 24 30 36 42 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 12 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics diode 1.8 6 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) -5 40 85 130 175 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSU80N03 N-Ch 30V Fast Switching MOSFETs 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss Crss 100 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSU80N03 N-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSU80N03 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5